TSC EGF1B 1.0 amp. surface mount glass passivated junction high efficient rectifier Datasheet

EGF1A THRU EGF1M
1.0 AMP. Surface Mount Glass Passivated Junction High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
SMA/DO-214AC
Features
.062(1.58)
.050(1.27)
Ideal for surface mount automotive applications
Glass passivated cavity-free junction
Easy pick and place
Capable of meeting enviromental standard of
MIL-S-19500
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Compete device submersible temperature of 265OC
for 10 sec in solder bath.
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
.091(2.30)
.078(1.99)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.120 gram
.012(.31)
.006(.15)
.008(.20)
.004(.10)
.056(1.41)
.035(0.90)
.210(5.33)
.195(4.95)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol EGF EGF EGF EGF EGF EGF EGF EGF Units
Type Number
1A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current @TL =125℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current
@TA =25℃ at Rated DC Blocking Voltage
@ TA=125℃
Maximum Reverse Recovery Time
(Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
VRRM
VRMS
VDC
50
35
50
1B
1C
1D
1G
1J
1K
1M
100 150 200 400 600 800 1000
70 105 140 280 420 560 700
100 150 200 400 600 800 1000
V
V
V
I(AV)
1.0
A
IFSM
30
A
1.0
VF
1.3
1.7
5
100
IR
50
Trr
uA
uA
75
15
85.0
30.0
-65 to +175
-65 to +175
Cj
RθJA
RθJL
TJ
V
nS
pF
℃/W
℃
℃
TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Thermal Resistance from Junction to Ambient and from Junction to Lead P.C.B. Mounted on
0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Areas.
Storage Temperature Range
- 586 -
1.0
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
30
PEAK FORWARD SURGE CURRENT (A)
AVERAGE FORWARD RECTIFIED CURRENT (A)
RATINGS AND CHARACTERISTIC CURVES (EGF1A THRU EGF1M)
0.5
RESISTIVE OR INDUCTIVE LOAD
P.C.B. MOUNTED ON 0.2 X 0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
0
25
50
75
100
125
150
FIG.2- MAXIMUM NON-REPETITVE PEAK FORWARD
SURGE CURRENT
Tj = Tj MAX
8.3ms Single Half Sine Wave
(JEDEC Method)
25
20
15
10
5.0
0
175
1
10
LEAD TEMPERATURE (OC)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
Tj = 150OC
Tj = 25OC
1
PULSE WIDTH-300 S
1% DUTY CYCLE
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS REVERSE LEAKAGE CURRENT ( A)
INSTANTANEOUS FORWARD CURRENT (A)
50
1000
FIG.4- TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
O
Tj = 150 C
10
Tj = 100OC
1
0.1
Tj = 25OC
0.01
0
INSTANTANEOUS FORWARD VOLTAGE (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE (pF)
TRANSIENT THERMAL IMPEDANCE (OC/W)
Tj=25OC
f=1.0MHz
Vsig=50mVp-p
50
40
30
20
10
0
0.1
1
10
40
20
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
70
60
100
NUMBER OF CYCLES AT 60 Hz
100
REVERSE VOLTAGE (V)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
10
1
0.1
0.01
0.1
1
10
PULSE DURATION. SECRETARY (T)
- 587 -
100
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