SAVANTIC BDW47 Silicon pnp power transistor Datasheet

SavantIC Semiconductor
Product Specification
BDW47
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type BDW42
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For general purpose and low speed
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current-DC
-15
A
IB
Base current
-0.5
A
PD
Total power dissipation
85
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
1.47
/W
SavantIC Semiconductor
Product Specification
BDW47
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-30mA, IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-5A ,IB=-10mA
-2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-10A ,IB=-50mA
-3.0
V
VBE
Base-emitter on voltage
IC=-10A ; VCE=-4V
-3.0
V
ICBO
Collector cut-off current
VCB=-100V, IE=0
-1.0
mA
ICEO
Collector cut-off current
VCE=-50V, IB=0
-2.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2.0
mA
hFE-1
DC current gain
IC=-5A ; VCE=-4V
1000
hFE-2
DC current gain
IC=-10A ; VCE=-4V
250
fT
Transition frequency
IC=-3A ; VCE=-3V;f=1MHz
4.0
COB
Output capacitance
IE=0 ; VCB=-10V;f=0.1MHz
2
MIN
TYP.
MAX
-100
UNIT
V
MHz
300
pF
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BDW47
Similar pages