ON NTB25P06G Power mosfet -60 v, -27.5 a, p-channel d2pak Datasheet

NTB25P06
Power MOSFET
−60 V, −27.5 A, P−Channel D2PAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
Features
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• Pb−Free Packages are Available
Typical Applications
•
•
•
•
PWM Motor Controls
Power Supplies
Converters
Bridge Circuits
V(BR)DSS
RDS(on) TYP
ID MAX
−60 V
65 m @ −10 V
−27.5 A
P−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp10 ms)
VGS
VGSM
15
20
V
Vpk
ID
A
Apk
Rating
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp10 s)
IDM
27.5
80
Total Power Dissipation @ TA = 25°C
PD
120
W
TJ, Tstg
−55 to
+175
°C
EAS
600
mJ
Operating and Storage
Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V,
IL(pk) = 20 A, L = 3 mH, RG = 25 )
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
G
S
4
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
1
2
3
NTB25P06
YWW
D2PAK
CASE 418B
STYLE 2
Drain
Gate
°C/W
RJC
RJA
RJA
1.25
46.8
63.2
TL
260
Source
NTB25P06 = Device Code
Y
= Year
WW
= Work Week
°C
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.412 in2).
Package
Shipping†
D2PAK
50 Units/Rail
NTB25P06G
D2PAK
(Pb−Free)
50 Units/Rail
NTB25P06T4
D2PAK
800/Tape & Reel
NTB25P06T4G
D2PAK
800/Tape & Reel
Device
NTB25P06
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 2
1
Publication Order Number:
NTB25P06/D
NTB25P06
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
−60
−
−
64
−
−
−
−
−
−
−10
−100
−
−
±100
−2.0
−
−2.8
6.2
−4.0
−
−
−
0.065
0.070
0.075
0.082
−
13
−
Ciss
−
1200
1680
Coss
−
345
480
Crss
−
90
180
td(on)
−
14
24
ns
tr
−
72
118
ns
td(off)
−
43
68
ns
tf
−
190
320
ns
QT
−
33
50
nC
Q1
−
6.5
−
Q2
−
15
−
VSD
−
−
−1.8
−1.4
−2.5
−
V
trr
−
70
−
ns
ta
−
50
−
tb
−
20
−
QRR
−
0.2
−
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 V, ID = −250 A)
(Positive Temperature Coefficient)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 V, VDS = −60 V, TJ = 25°C)
(VGS = 0 V, VDS = −60 V, , TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ± 15 V, VDS = 0 V)
IGSS
V
mV/°C
A
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = −250 A)
(Negative Threshold Temperature Coefficient)
VGS(th)
Static Drain−Source On−State Resistance
(VGS = −10 V, ID = −12.5 A)
(VGS = −10 V, ID = −25 A)
RDS(on)
Forward Transconductance
(VDS = −10 V, ID = −12.5 A)
V
mV/°C
gFS
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = −25 V, VGS = 0 V,
F = 1.0 MHz)
Reverse Transfer Capacitance
pF
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = −30 V, ID = −25 A,
VGS = −10 V RG = 9.1 )
Fall Time
Gate Charge
(VDS = −48 V, ID = −25 A,
VGS = −10 V)
BODY−DRAIN DIODE RATINGS (Note 3)
Diode Forward On−Voltage
(IS = −25 A, VGS = 0 V)
(IS = −25 A, VGS = 0 V, TJ = 150°C)
Reverse Recovery Time
(IS = −25 A, VGS = 0 V,
dIS/dt = 100 A/s)
Reverse Recovery Stored Charge
3. Indicates Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
C
NTB25P06
VGS = −10 V
−ID, DRAIN CURRENT (AMPS)
45
50
TJ = 25°C
−7 V
−8 V
−9 V
−ID, DRAIN CURRENT (AMPS)
50
40
35
30
−6 V
25
20
−5.5 V
15
−5 V
10
−4.5 V
−4.2 V
5
VDS ≥ 10 V
TJ = 25°C
40
TJ = −55°C
30
TJ = 125°C
20
10
0
0
0
2
4
6
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
10
4
6
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
0.2
VGS = −10 V
0.15
TJ = 125°C
0.1
TJ = 25°C
TJ = −55°C
0.05
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
0
10
20
30
40
50
0.095
TJ = 25°C
0.085
VGS = −10 V
0.075
VGS = −15 V
0.065
10
20
30
40
50
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1.75
VGS = 0 V
ID = −25 A
VGS = −10 V
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 1. On−Region Characteristics
8
1.5
1.25
1
1000
TJ = 150°C
100
TJ = 125°C
0.75
0.5
−50
10
−25
0
25
50
75
100
125
150
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
3000
2500
C, CAPACITANCE (pF)
VGS = 0 V
VDS = 0 V
TJ = 25°C
Ciss
2000
Crss
1500
Ciss
1000
Coss
500
Crss
0
10
5 −VGS 0 −VDS 5
10
15
20
25
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTB25P06
10
QT
VDS
8
Q1
6
4
2
ID = −25 A
TJ = 25°C
0
0
4
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
25
30
35
−IS, SOURCE CURRENT (AMPS)
25
tr
t, TIME (ns)
20
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
tf
td(off)
td(on)
10
VDD = −30 V
ID = −25 A
VGS = −10 V
1
10
100
VGS = 0 V
TJ = 25°C
20
15
10
5
0
0
0.25
RG, GATE RESISTANCE ()
VGS = −20 V
SINGLE PULSE
TC = 25°C
100
dc
10 ms
1 ms
1
0.1
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
0.75
1
1.25
1.5
1.75
100 s
10
100
Figure 10. Diode Forward Voltage vs. Current
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
10
0.5
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
−ID, DRAIN CURRENT (AMPS)
15
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1
VGS
Q2
600
ID = −25 A
500
400
300
200
100
0
25
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
150
NTB25P06
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE H
C
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
D
H
3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
M
T B
M
N
R
P
STYLE 2:
PIN 1.
2.
3.
4.
U
L
M
W
J
G
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTB25P06
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTB25P06/D
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