DSS5320T 20V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SOT-23 Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) C SOT-23 C B Top View E B E Device Symbol Pin-Out Top Ordering Information (Note 3) Product DSS5320T-7 Notes: Marking ZP4 Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com ZP4 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DSS5320T Document number: DS31620 Rev. 2 - 2 Mar 3 YM Marking Information 2011 Y Apr 4 ZP4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2012 Z May 5 Jun 6 1 of 5 www.diodes.com 2013 A Jul 7 2014 B Aug 8 Sep 9 2015 C Oct O 2016 D Nov N Dec D October 2010 © Diodes Incorporated DSS5320T Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Repetitive Peak Pulse Current (Note 4) Continuous Collector Current Base Current Symbol VCBO VCEO VEBO ICM ICRP IC IB Value -20 -20 -5 -5 -3 -2 -0.5 Unit V V V A A A A Value 600 209 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 5) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG 4. Operated under pulsed conditions: pulse width ≤100ms, duty cycle ≤ 0.25. 5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Notes: 100 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 0.8 0.6 0.4 0.2 RθJA = 209°C/W 0 0 50 100 150 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature DSS5320T Document number: DS31620 Rev. 2 - 2 10 1 0.1 0.01 0.001 0.1 2 of 5 www.diodes.com 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Safe Operating Area October 2010 © Diodes Incorporated DSS5320T Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Collector-Emitter Saturation Voltage (Note 6) VCE(sat) Equivalent On-Resistance RCE(sat) Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-on Voltage VBE(on) Min ⎯ ⎯ ⎯ -20 -20 -5 220 220 200 150 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Transition Frequency fT 100 180 ⎯ MHz Output Capacitance Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Cob ton td tr toff ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 25 67 23 44 224 184 40 50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF ns ns ns ns ns ns Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage IEBO BVCBO BVCEO BVEBO DC Current Gain (Note 5) Max -100 -50 -100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -70 -130 -230 -210 -300 105 -1.1 -1.2 -1.2 Unit nA μA nA V V V ⎯ mV mΩ V V V Test Conditions VCB = -20V, IE = 0 VCB = -20V, IE = 0, TA = 150°C VEB = -5V, IC = 0 IC = -100μA IC = -10mA IE = -100μA VCE = -2V, IC = -0.1A VCE = -2V, IC = -0.5A VCE = -2V, IC = -1A VCE = -2V, IC = -2A VCE = -2V, IC = -3A IC = -0.5A, IB = -50mA IC = -1A, IB = -50mA IC = -2A, IB = -100mA IC = -2A, IB = -200mA IC = -3A, IB = -300mA IE = -2A, IB = -200mA IC = -2A, IB = -100mA IC = -3A, IB = -300mA VCE = -2V, IC = -1A VCE = -5V, IC = -100mA, f = 100MHz VCB = -10V, f = 1MHz VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 2.0 1,000 1.8 900 1.6 800 IB = 5mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) Notes: hFE Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.4 IB = 4mA 1.2 IB = 3mA 1.0 0.8 IB = 2mA 0.6 0.4 TA = 125°C 700 TA = 85°C 600 500 TA = 25°C 400 300 200 IB = 1mA VCE = -2V T A = 150°C TA = -55°C 100 0.2 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage DSS5320T Document number: DS31620 Rev. 2 - 2 3 of 5 www.diodes.com 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical DC Current Gain vs. Collector Current October 2010 © Diodes Incorporated DSS5320T 1 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.1 TA = 150°C T A = 125°C T A = 85°C 0.01 TA = 25°C TA = -55°C 0.001 0.001 0.8 T A = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 T A = 150°C TA = 125°C 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current TA = 150°C TA = 125°C TA = 85°C TA = 25°C 0.01 TA = -55°C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.0 VCE = -2V 0.1 0.001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 IC/IB = 20 1.2 IC/IB = 10 1.0 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C 0.4 T A = 125°C T A = 150°C 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current Package Outline Dimensions A B C H K M K1 D J F G DSS5320T Document number: DS31620 Rev. 2 - 2 L 4 of 5 www.diodes.com SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm October 2010 © Diodes Incorporated DSS5320T Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DSS5320T Document number: DS31620 Rev. 2 - 2 5 of 5 www.diodes.com October 2010 © Diodes Incorporated