ON MC74VHC1GU04DFT2 Single unbuffered inverter Datasheet

MC74VHC1GU04
Single Unbuffered Inverter
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MARKING
DIAGRAMS
5
5
1
SC−88A/SOT−353/SC−70
DF SUFFIX
CASE 419A
V6 M G
G
M
The MC74VHC1GU04 is an advanced high speed CMOS
Unbuffered inverter fabricated with silicon gate CMOS technology.
This device consists of a single unbuffered inverter. In combination
with others, or in the MC74VHCU04 Hex Unbuffered Inverter, these
devices are well suited for use as oscillators, pulse shapers, and in
many other applications requiring a high−input impedance amplifier.
For digital applications, the MC74VHC1G04 or the MC74VHC04 are
recommended.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The MC74VHC1GU04 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GU04 to be used to interface 5 V circuits to
3 V circuits.
1
Features
•
•
•
•
•
•
•
High Speed: tPD = 2.5 ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: FETs = 105
Pb−Free Packages are Available
NC
1
IN A
2
GND
5
5
V6 M G
G
5
1
TSOP−5/SOT−23/SC−59
DT SUFFIX
CASE 483
V6
M
G
1
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
VCC
PIN ASSIGNMENT
4
3
OUT Y
Figure 1. Pinout
1
NC
2
IN A
3
GND
4
OUT Y
5
VCC
FUNCTION TABLE
1
IN A
OUT Y
Figure 2. Logic Symbol
A Input
Y Output
L
H
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 16
1
Publication Order Number:
MC74VHC1GU04/D
MC74VHC1GU04
MAXIMUM RATINGS
Symbol
Parameter
VCC
DC Supply Voltage
VIN
DC Input Voltage
Value
Unit
*0.5 to )7.0
V
−0.5 to +7.0
V
*0.5 to VCC )0.5
V
IIK
DC Input Diode Current
−20
mA
IOK
DC Output Diode Current
$20
mA
IOUT
DC Output Sink Current
$12.5
mA
ICC
DC Supply Current per Supply Pin
$25
mA
*65 to )150
°C
VOUT
DC Output Voltage
TSTG
Storage Temperature Range
TL
Lead Temperature, 1 mm from Case for 10 Seconds
TJ
Junction Temperature Under Bias
qJA
Thermal Resistance
PD
Power Dissipation in Still Air at 85°C
MSL
Moisture Sensitivity
FR
Flammability Rating
VESD
°C
°C
SC70−5/SC−88A (Note 1)
TSOP−5
350
230
°C/W
SC70−5/SC−88A
TSOP−5
150
200
mW
Level 1
Oxygen Index: 28 to 34
Latchup Performance
UL 94 V−0 @ 0.125 in
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u1500
u200
N/A
V
Above VCC and Below GND at 125°C (Note 5)
$500
mA
ESD Withstand Voltage
ILATCHUP
260
)150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
5.5
V
VCC
DC Supply Voltage
2.0
VIN
DC Input Voltage
0.0
5.5
V
DC Output Voltage
0.0
VCC
V
*55
)125
°C
0
0
100
20
ns/V
VOUT
TA
Operating Temperature Range
tr , tf
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Input Rise and Fall Time
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80 ° C
117.8
TJ = 90 ° C
1,032,200
TJ = 100 ° C
80
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 110° C
Time, Years
TJ = 120° C
Time, Hours
TJ = 130 ° C
Junction
Temperature 5C
NORMALIZED FAILURE RATE
Device Junction Temperature versus
Time to 0.1% Bond Failures
1
1
10
TIME, YEARS
100
1000
Figure 3. Failure Rate vs. Time Junction Temperature
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2
MC74VHC1GU04
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
(V)
Min
1.7
2.4
3.6
4.4
VIH
Minimum High−Level
Input Voltage
2.0
3.0
4.5
5.5
VIL
Maximum Low−Level
Input Voltage
2.0
3.0
4.5
5.5
VOH
Minimum High−Level
Output Voltage
VIN = VIH or VIL
VOL
Maximum Low−Level
Output Voltage
VIN = VIH or VIL
TA ≤ 85°C
TA = 25°C
VCC
Typ
Max
Min
1.7
2.4
3.6
4.4
0.3
0.6
0.9
1.1
VIN = VIH or VIL
IOH = −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
3.0
4.5
2.58
3.94
VIN = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
Max
2.0
3.0
4.5
−55 ≤ TA ≤ 125°C
Min
Max
1.7
2.4
3.6
4.4
0.3
0.6
0.9
1.1
V
0.3
0.6
0.9
1.1
1.9
2.9
4.4
1.9
2.9
4.4
2.48
3.80
2.34
3.66
Unit
V
V
V
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
V
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
±1.0
mA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
1.0
20
40
mA
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AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns
TA ≤ 85°C
TA = 25°C
Symbol
Parameter
Test Conditions
Typ
Max
Max
Unit
tPLH,
tPHL
Maximum Propagation
Delay, Input A to Y
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
3.5
4.8
8.9
11.4
10.5
13.0
12.0
15.5
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
2.5
3.8
5.5
7.0
6.5
8.0
8.0
9.5
4
10
10
10
CIN
Min
Maximum Input
Capacitance
Min
Max
−55 ≤ TA ≤ 125°C
Min
pF
Typical @ 25°C, VCC = 5.0V
CPD
22
Power Dissipation Capacitance (Note 6)
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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3
MC74VHC1GU04
A
VCC
50% VCC
GND
tPHL
tPLH
VOH
Y
50% VCC
VOL
Figure 4. Switching Waveforms
OUTPUT
INPUT
CL*
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended for propagation delay tests.
Figure 5. Test Circuit
ORDERING INFORMATION
Device
Package
MC74VHC1GU04DFT1
SC70−5/SC−88A/SOT−353
M74VHC1GU04DFT1G
SC70−5/SC−88A/SOT−353
(Pb−Free)
MC74VHC1GU04DFT2
SC70−5/SC−88A/SOT−353
M74VHC1GU04DFT2G
SC70−5/SC−88A/SOT−353
(Pb−Free)
MC74VHC1GU04DTT1
TSOP−5/SOT23−5/SC59−5
M74VHC1GU04DTT1G
TSOP−5/SOT23−5/SC59−5
(Pb−Free)
Shipping†
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MC74VHC1GU04
PACKAGE DIMENSIONS
SC−88A, SOT−353, SC−70
CASE 419A−02
ISSUE J
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
G
5
4
−B−
S
1
2
DIM
A
B
C
D
G
H
J
K
N
S
3
D 5 PL
0.2 (0.008)
M
B
M
N
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
mm Ǔ
ǒinches
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
MC74VHC1GU04
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE G
NOTE 5
2X
0.10 T
2X
0.20 T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5. OPTIONAL CONSTRUCTION: AN
ADDITIONAL TRIMMED LEAD IS ALLOWED
IN THIS LOCATION. TRIMMED LEAD NOT TO
EXTEND MORE THAN 0.2 FROM BODY.
D 5X
0.20 C A B
5
1
4
2
3
M
B
S
K
L
DETAIL Z
G
A
DIM
A
B
C
D
G
H
J
K
L
M
S
DETAIL Z
J
C
0.05
SEATING
PLANE
H
T
MILLIMETERS
MIN
MAX
3.00 BSC
1.50 BSC
0.90
1.10
0.25
0.50
0.95 BSC
0.01
0.10
0.10
0.26
0.20
0.60
1.25
1.55
0_
10 _
2.50
3.00
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.074
2.4
0.094
1.0
0.039
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MC74VHC1GU04/D
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