DIODES DMN601K_08

DMN601K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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NEW PRODUCT
Features
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•
•
•
•
•
•
Mechanical Data
•
•
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 4 and 6)
ESD Protected Up To 2kV
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
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•
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Drain
SOT-23
D
Gate
ESD protected up to 2kV
TOP VIEW
Gate
Protection
Diode
TOP VIEW
Pin Out Configuration
EQUIVALENT CIRCUIT
Maximum Ratings
S
G
Source
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Symbol
Pd
RθJA
Tj, TSTG
Value
350
357
-65 to +150
Units
mW
°C/W
°C
Continuous
Pulsed (Note 3)
Drain Current (Note 1)
Thermal Characteristics
Units
V
V
ID
Value
60
±20
300
800
mA
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
⎯
⎯
⎯
⎯
⎯
⎯
1.0
±10
V
μA
μA
VGS = 0V, ID = 10μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
2.5
2.0
3.0
|Yfs|
1.6
⎯
⎯
⎯
V
Static Drain-Source On-Resistance
1.0
⎯
⎯
80
⎯
ms
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VDS = 10V, ID = 0.2A
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
50
25
5.0
pF
pF
pF
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
1.
2.
3.
4.
5.
6.
Ω
Test Condition
VDS = 25V, VGS = 0V, f = 1.0MHz
Device mounted on FR-4 PCB.
No purposefully added lead. Halogen and Antimony Free.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DMN601K
Document number: DS30652 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated
ID, DRAIN CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
0
3
1
2
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
10
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
2
1.5
1
0.5
1
0.1
0
-50
-25
75 100 125 150
0
25
50
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
10
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
NEW PRODUCT
DMN601K
0
1
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
DMN601K
Document number: DS30652 Rev. 4 - 2
2 of 4
www.diodes.com
June 2008
© Diodes Incorporated
IDR, REVERSE DRAIN CURRENT (A)
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
0
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
Tch, CHANNEL TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
IDR, REVERSE DRAIN CURRENT (A)
1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance vs. Drain Current
1
Ordering Information
(Note 7)
Part Number
DMN601K-7
Notes:
Case
SOT-23
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K7K
Date Code Key
Year
Code
2005
S
2006
T
YM
NEW PRODUCT
DMN601K
K7K = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DMN601K
Document number: DS30652 Rev. 4 - 2
3 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN601K
Package Outline Dimensions
A
B C
NEW PRODUCT
TOP VIEW
G
H
K
M
J
D
L
E
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
G
C
X
Dimensions Value (in mm)
Z
3.4
G
0.7
X
0.9
Y
1.4
C
2.0
E
0.9
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN601K
Document number: DS30652 Rev. 4 - 2
4 of 4
www.diodes.com
June 2008
© Diodes Incorporated