AO4801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to form a bidirectional blocking switch. Standard Product AO4801 is Pb-free (meets ROHS & Sony 259 specifications). AO4801L is a Green Product ordering option. AO4801 and AO4801L are electrically identical. VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 49mΩ (VGS = -10V) RDS(ON) < 64mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) S2 G2 S1 G1 1 2 3 4 8 7 6 5 G2 G1 SOIC-8 TA=25°C Junction and Storage Temperature Range A V 2 TJ, TSTG t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A W 1.44 °C -55 to 150 Symbol A ±12 -30 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead Units V -4.2 ID IDM TA=25°C A Maximum -30 -5 TA=70°C Pulsed Drain Current B Power Dissipation S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A D2 D1 D2 D2 D1 D1 RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W AO4801 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.7 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 -5 Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge -1.3 V A 42.5 49 74 mΩ mΩ VGS=-2.5V, I D=-1A 80 120 mΩ -1 V -3 A VDS=-5V, ID=-5A DYNAMIC PARAMETERS Ciss Input Capacitance Rg nA 64 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Crss ±100 54 Forward Transconductance Output Capacitance µA VGS=-4.5V, I D=-4A VSD Coss -1 TJ=125°C gFS IS Units V TJ=55°C VGS=-10V, ID=-5A Static Drain-Source On-Resistance Max -1 VDS=-24V, VGS=0V IDSS RDS(ON) Typ 7 11 -0.75 S 952 pF VGS=0V, VDS=-15V, f=1MHz 103 pF 77 pF VGS=0V, VDS=0V, f=1MHz 5.9 Ω 9.5 nC 2 nC VGS=-4.5V, VDS=-15V, ID=-5A Qgd Gate Drain Charge 3.1 nC tD(on) Turn-On DelayTime 12 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=3Ω, RGEN=6Ω 4 ns 37 ns 12 ns trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 21 Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 13 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 25 -10V 20 VDS=-5V -4.5V 8 15 -ID(A) -ID (A) -3V -2.5V 10 VGS=-2V 5 6 125°C 4 25°C 2 0 0 0 1 2 3 4 5 0 0.5 -VDS (Volts) Fig 1: On-Region Characteristics Normalized On-Resistance 1.6 RDS(ON) (mΩ) 100 80 VGS=-2.5V 60 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics 120 VGS=-4.5V 40 VGS=-10V 20 ID=-5A VGS=-4.5V VGS=-10V 1.4 1.2 VGS=-2.5V ID=-2A 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 190 1.0E+01 170 1.0E+00 150 ID=-2A 1.0E-01 130 -IS (A) RDS(ON) (mΩ) 1 110 90 125°C 70 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 30 1.0E-06 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-15V ID=-5A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 Ciss 800 600 400 1 Coss 200 0 0 0 2 4 6 8 10 12 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 TJ(Max)=150°C TA=25°C 10 15 40 25 30 30 100µs 1ms 0.1s 20 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 10ms 1s 1.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 100.0 -ID (Amps) Crss 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000