Fairchild FFH75H60S Hyperfast recovery power rectifier Datasheet

FFH75H60S
Hyperfast Recovery Power Rectifier
tm
Features
75A, 600V Hyperfast Rectifier
• High Speed Switching ( trr=40ns(Typ.) @ IF=75A )
The FFH75H60S is a hyperfast diode with soft recovery
characteristics (trr< 40ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated ionimplanted epitaxial planar construction.This device is
intended for use as a freewheeling/clamping diode and
rectifier in a variety of switching power supplies and
other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits, thus
reducing powerloss in the switching transistors.
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
• Low Forward Voltage( VF=1.8V(Typ.) @ IF=75A )
Applications
• General Purpose
• Switching Mode Power Supply
• Power switching circuits
Pin Assignments
1. Cathode
TO-247-2L
2. Anode
Absolute Maximum Ratings
Symbol
2
2. Anode
1
1. Cathode
TC = 25°C unless otherwise noted
Parameter
Ratings
Units
VRRM
Peak Repetitive Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current
75
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
750
A
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
°C
Thermal Characteristics T
C
Symbol
RθJC
@ TC = 105°C
= 25°C unless otherwise noted
Parameter
Maximum Thermal Resistance, Junction to Case
Max
Units
0.4
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FFH75H60S
FFH75H60S
TO-247-2L
-
-
30
©2012 Fairchild Semiconductor Corporation
FFH75H60S Rev. C1
1
www.fairchildsemi.com
FFH75H60S Hyperfast Recovery Power Rectifier
September 2012
C
= 25°C unless otherwise noted
Parameter
1
Conditions
Min.
Typ.
Max
Units
IF = 75A
IF = 75A
TC = 25 °C
TC = 125 °C
-
1.8
1.6
2.2
2.0
V
V
IRM1
VR = 600V
VR = 600V
TC = 25 °C
TC = 125 °C
-
-
100
1.0
μA
mA
trr
IF =75A, di/dt = 200A/μs, VCC = 390V
TC = 25 °C
TC = 125 °C
-
40
85
75
-
ns
ns
ta
tb
Qrr
IF =75A, di/dt = 200A/μs, VCC = 390V
TC = 25 °C
TC = 25 °C
TC = 25 °C
-
23
17
80
-
ns
ns
nC
WAVL
Avalanche Energy (L = 40mH)
20
-
-
mJ
VFM
Notes:
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%
Test Circuit and Waveforms
FFH75H60S Rev. C1
2
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FFH75H60S Hyperfast Recovery Power Rectifier
Electrical Characteristics T
Figure 2. Typical Reverse Current vs.
Reverse Voltage
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
100
Forward Current, IF [A]
100
Reverse Current , IR [μA]
400
o
TC = 125 C
o
TC = 75 C
10
o
TC = 25 C
1
0
1
2
Forward Voltage, VF [V]
150
300
450
Reverse Voltage, VR [V]
600
120
IF = 75A
Reverse Recovery Time, trr [ns]
Capacitances , Cj [pF]
10
Figure 4. Typical Reverse Recovery Time
vs. di/dt
600
400
200
1
10
Reverse Voltage, VR [V]
o
TC = 125 C
90
o
TC = 75 C
60
30
0
100
100
o
TC = 25 C
200
300
di/dt [A/μs]
400
500
Figure 6. Forward Current Derating Curve
Figure 5. Typical Reverse Recovery
Current vs. di/dt
20
175
o
TC = 125 C
15
Average Forward Current, IF(AV) [A]
Reverse Recovery Current, Irr [A]
0.1
0.01
3
Typical Capacitance
at 0V = 681 pF
o
TC = 75 C
10
o
TC = 25 C
5
IF = 75A
FFH75H60S Rev. C1
o
TC = 75 C
o
800
0
100
1
TC = 25 C
Figure 3.Typical Junction Capacitance
0
0.1
o
TC = 125 C
10
200
300
di/dt [A/μs]
400
150
125
100
75
50
25
0
25
500
3
50
75
100
125
o
Case temperature, TC [ C]
150
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FFH75H60S Hyperfast Recovery Power Rectifier
Typical Performance Characteristics
FFH75H60S Hyperfast Recovery Power Rectifier
Typical Performance Characteristics (Continued)
Figure 7. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.1
0.2
0.1
0.01
t1
*Notes:
t2
o
1. ZθJC(t) = 0.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.001
-5
10
FFH75H60S Rev. C1
PDM
0.05
0.02
0.01
Single pulse
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
4
-1
10
1
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FFH75H60S Hyperfast Recovery Power Rectifier
Mechanical Dimensions
TO-247-2L
Dimensions in Millimeters
FFH75H60S Rev. C1
5
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FFH75H60S Rev. C1
6
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FFH75H60S Hyperfast Recovery Power Rectifier
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