ON MJF2955 Complementary silicon power transistor Datasheet

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by MJF3055/D
SEMICONDUCTOR TECHNICAL DATA
. . . specifically designed for general purpose amplifier and switching applications.
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Isolated Overmold Package (1500 Volts RMS Min)
Electrically Similar to the Popular MJE3055T and MJE2955T
Collector–Emitter Sustaining Voltage — VCEO(sus) 90 Volts
10 Amperes Rated Collector Current
No Isolating Washers Required
Reduced System Cost
UL Recognized, File #E69369, to 3500 VRMS Isolation
COMPLEMENTARY
SILICON
POWER TRANSISTORS
10 AMPERES
90 VOLTS
30 WATTS
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CASE 221D–02
TO–220 TYPE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
VCEO(sus)
90
Vdc
Collector–Emitter Breakdown Voltage
VCES
90
Vdc
Base–Emitter Voltage
VEBO
5
Vdc
Collector Current — Continuous
IC
10
Adc
Base Current — Continuous
IB
6
Adc
VISOL
4500
3500
1500
VRMS
Total Power Dissipation @ TC = 25_C (2)
Derate above 25_C
PD
30
0.25
Watts
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2
0.016
Watts
W/_C
TJ, Tstg
– 55 to + 150
_C
Symbol
Max
Unit
Thermal Resistance — Junction to Case (2)
RθJC
4
_C/W
Thermal Resistance — Junction to Ambient
RθJA
62.5
_C/W
TL
260
_C
RMS Isolation Voltage (3)
(for 1 sec, R.H. < 30%,
TA = 25_C)
Test No. 1 Per Fig. 4
Test No. 2 Per Fig. 5
Test No. 3 Per Fig. 6
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Lead Temperature for Soldering Purposes
(1)
(2)
(2)
(3)
Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a
heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
Proper strike and creepage distance must be provided.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
90
—
Vdc
Collector Cutoff Current (VCE = 90 Vdc, VBE = 0)
ICES
—
1
µAdc
Collector Cutoff Current (VCE = 90 Vdc, IE = 0)
ICBO
—
1
µAdc
Emitter–Base Leakage (VEB = 5 Vdc, IC = 0)
IEBO
—
1
µAdc
hFE
20
5
100
—
—
—
—
1
2.5
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0)
ON CHARACTERISTICS (1)
DC Current Gain (ICE = 4 Adc, VCE = 4 Vdc)
DC Current Gain (ICE = 10 Adc, VCE = 4 Vdc)
Collector–Emitter Saturation Voltage
(IC = 4 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Vdc
Base–Emitter On Voltage (IC = 4 Adc, VBE = 4 Vdc)
VBE(on)
—
1.5
Vdc
fT
2
—
MHz
DYNAMIC CHARACTERISTICS
Current–Gain–Bandwidth Product
(VCE = 10 Vdc, IC = 0.5 Adc, ftest = 500 kHz)
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
500
10
100 µs
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (AMPS)
20
5 ms
5
3
2
TJ = 150°C
1
1 ms
dc
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
0.5
0.3
0.2
1
300
200
TJ = 150°C
100
25°C
50
– 55°C
30
20
10
50
3
5
10
20 30
2
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5
0.01
100
5
0.05 0.1
2
0.2
0.5
1
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
PNP
MJF2955
PNP
MJF3055
10
1.4
TJ = 25°C
1.2
V, VOLTAGE (VOLTS)
1.6
V, VOLTAGE (VOLTS)
0.02
Figure 1. Maximum Forward Bias Safe
Operating Area
2
1.2
0.8
VCE = 2 V
VBE(sat) @ IC/IB = 10
VBE @ VCE = 3 V
TJ = 25°C
1
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2 V
0.4
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1
0.2 0.3
0.5
1
2
3
5
10
VCE(sat) @ IC/IB = 10
0
0.1
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5
1
2
3
5
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltages
2
Motorola Bipolar Power Transistor Device Data
10
TEST CONDITIONS FOR ISOLATION TESTS*
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
LEADS
HEATSINK
MOUNTED
FULLY ISOLATED
PACKAGE
0.107” MIN
LEADS
MOUNTED
FULLY ISOLATED
PACKAGE
0.107” MIN
LEADS
HEATSINK
HEATSINK
0.110” MIN
Figure 4. Clip Mounting Position
for Isolation Test Number 1
Figure 5. Clip Mounting Position
for Isolation Test Number 2
Figure 6. Screw Mounting Position
for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION
4–40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 7. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
Motorola Bipolar Power Transistor Device Data
3
PACKAGE DIMENSIONS
SEATING
PLANE
–T–
–B–
F
C
S
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
U
A
1 2 3
H
–Y–
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.621
0.629
0.394
0.402
0.181
0.189
0.026
0.034
0.121
0.129
0.100 BSC
0.123
0.129
0.018
0.025
0.500
0.562
0.045
0.060
0.200 BSC
0.126
0.134
0.107
0.111
0.096
0.104
0.259
0.267
MILLIMETERS
MIN
MAX
15.78
15.97
10.01
10.21
4.60
4.80
0.67
0.86
3.08
3.27
2.54 BSC
3.13
3.27
0.46
0.64
12.70
14.27
1.14
1.52
5.08 BSC
3.21
3.40
2.72
2.81
2.44
2.64
6.58
6.78
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 221D–02
TO–220 TYPE
ISSUE D
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4
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Motorola Bipolar Power Transistor Device Data
*MJF3055/D*
MJF3055/D
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