LIGITEK LA112B-YSBKS.X-PF Led array Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
Pb
Lead-Free Parts
LA112B/YSBKS.X-PF
DATA SHEET
DOC. NO : QW0905-LA112B/YSBKS.X-PF
REV.
:
A
DATE
: 02 - Feb. - 2008
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/6
PART NO. LA112B/YSBKS.X-PF
Package Dimensions
2.5±0.5
4.3
Ø 3.2
8.2
2.9
YSBKS
5.0
9.6
X
2.65
□0.5
TYP
3.2±0.3
4.45±0.5
2.54TYP
1
SBKS
2
6.99±0.5
Y
1
2
LYSBKS2662/R1-PF
2.9 3.1
3.3
4.3
1.5MAX
SBKS
□0.5
TYP
25.0MIN
Y
1
1
2
2
1.0MIN
2.54TYP
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
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PART NO. LA112B/YSBKS.X-PF
Page 2/6
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
Y
SBKS
Forward Current
IF
20
30
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
80
100
mA
Power Dissipation
PD
60
120
mW
Ir
10
50
μA
Electrostatic Discharge( * )
ESD
---
500
Operating Temperature
Topr
-20 ~ +80
℃
Storage Temperature
Tstg
-30 ~ +100
℃
Reverse Current @5V
V
Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic
* Static
glove is recommended when handing these LED. All devices, equipment and machinery must be properly
grounded.
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
MATERIAL
Peak Dominant Spectral
wave
wave halfwidth
length length △λnm
λPnm λDnm
COLOR
Emitted
Viewing
Luminous
intensity
angle
@20mA(mcd) 2θ 1/2
(deg)
Min. Typ. Max. Min. Typ.
Lens
GaAsP/GaP Yellow
Forward
voltage
@20mA(V)
585
----
35
1.7
----
2.6
21
38
50
----
475
26
----
3.5
4.2
65
120
50
White Diffused
LA112B/YSBKS.X-PF
InGaN/SiC Blue
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
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PART NO. LA112B/YSBKS.X-PF
Page 3/6
Typical Electro-Optical Characteristics Curve
Y CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
4.0
5.0
1.0
10
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
1.2
1.1
1.0
0.9
0.8
-20
0
20
40
60
80
100
Relative Intensity@20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
500
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
700
80
100
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PART NO. LA112B/YSBKS.X-PF
Typical Electro-Optical Characteristics Curve
SBK-S CHIP
Fig.2 Relative Intensity vs. Forward Current
30
1.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
Fig.1 Forward current vs. Forward Voltage
25
20
15
10
5
0
1
2
3
4
1.25
1.0
0.75
0.5
0.25
0
5
0
5
Relative Intensity@20mA
Forward Current@20mA
40
30
20
10
0
50
75
Ambient Temperature( ℃)
20
25
30
Fig.4 Relative Intensity vs. Wavelength
Fig.3 Forward Current vs. Temperature
25
15
Forward Current(mA)
Forward Voltage(V)
0
10
100
1.0
0.5
0
380
430
480
530
580
Wavelength (nm)
630
680
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PART NO. LA112B/YSBKS.X-PF
Page 5/6
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350°C Max
Soldering Time:3 Seconds Max(One Time)
Distance:2mm Min(From solder joint to case)
2.Wave Soldering Profile
Dip Soldering
Preheat: 120° C Max
Preheat time: 60seconds Max
Ramp-up
2° C/sec(max)
Ramp-Down:-5°C/sec(max)
Solder Bath:260° C Max
Dipping Time:3 seconds Max
Distance:2mm Min(From solder joint to case)
Temp(° C)
260° C3sec Max
260°
5° /sec
max
120°
25°
0° 0
2° /sec
max
Preheat
50
100
60 Seconds Max
Note: 1.Wave solder should not be made more than one time.
2.You can just only select one of the soldering conditions as above.
150
Time(sec)
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PART NO. LA112B/YSBKS.X-PF
Page 6/6
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95 %
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5 ℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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