Vishay IRFZ44RPBF Power mosfet Datasheet

IRFZ44R, SiHFZ44R
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
Advanced Process Technology
Ultra Low On-Resistance
Available
Dynamic dV/dt Rating
RoHS*
COMPLIANT
175 °C Operating Temperature
Fast Switching
Fully Avalanche Rated
Drop in Replacement of the IRFZ44/SiHFZ44 for
Linear/Audio Applications
• Lead (Pb)-free Available
60
RDS(on) (Ω)
VGS = 10 V
0.028
Qg (Max.) (nC)
67
Qgs (nC)
18
Qgd (nC)
25
Configuration
Single
D
TO-220
DESCRIPTION
Advanced Power MOSFETs from Vishay utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
S
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRFZ44RPbF
SiHFZ44R-E3
IRFZ44R
SiHFZ44R
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
VGS
± 20
50
36
200
1.0
100
150
4.5
- 55 to + 175
300
10
1.1
V
Gate-Source Voltage
Currente
TC = 25 °C
TC = 100 °C
Continuous Drain
VGS at 10 V
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
for 10 s
Soldering Recommendations (Peak Temperature)d
Mounting Torque
ID
IDM
EAS
PD
dV/dt
TJ, Tstg
6-32 or M3 screw
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 44 µH, RG = 25 Ω, IAS = 51 A (see fig. 12).
c. ISD ≤ 51 A, dV/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91292
S-Pending-Rev. A, 17-Jul-08
WORK-IN-PROGRESS
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IRFZ44R, SiHFZ44R
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 µA
60
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.060
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = 31 Ab
VGS = 10 V
VDS = 25 V, ID = 31 Ab
µA
-
-
0.028
Ω
15
-
-
S
-
1900
-
-
920
-
-
170
-
-
-
67
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
18
Gate-Drain Charge
Qgd
-
-
25
Turn-On Delay Time
td(on)
-
14
-
tr
-
110
-
-
45
-
-
92
-
-
4.5
-
-
7.5
-
-
-
50c
-
-
200
-
-
2.5
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 51 A, VDS = 48 V,
see fig. 6 and 13b
VDD = 30 V, ID = 51 A,
RG = 9.1 Ω, RD = 0.55 Ω, see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 51 A, VGS = 0 Vb
TJ = 25 °C, IF = 51 A, dI/dt = 100 A/µsb
V
-
120
180
ns
-
0.53
0.80
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Current limited by the package (die current = 51 A).
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Document Number: 91292
S-Pending-Rev. A, 17-Jul-08
IRFZ44R, SiHFZ44R
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 3 - Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig. 1 - Typical Output Characteristics
2.5
ID = 51A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig. 2 - Typical Output Characteristics
Document Number: 91292
S-Pending-Rev. A, 17-Jul-08
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFZ44R, SiHFZ44R
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
ID , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
1ms
10
1
10ms
TC = 25 °C
TJ = 175 °C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 8 - Maximum Safe Operating Area
Document Number: 91292
S-Pending-Rev. A, 17-Jul-08
IRFZ44R, SiHFZ44R
Vishay Siliconix
60
LIMITED BY PACKAGE
VGS
50
ID , Drain Current (A)
RD
VDS
D.U.T.
RG
40
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
30
Fig. 10a - Switching Time Test Circuit
20
VDS
90 %
10
0
25
50
75
100
125
150
10 %
VGS
175
TC , Case Temperature ( ° C)
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response(Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
t1
0.05
t2
0.02
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
L
VDS
D.U.T
RG
IAS
20 V
tp
Driver
+
A
- VDD
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91292
S-Pending-Rev. A, 17-Jul-08
Fig. 12b - Unclamped Inductive Waveforms
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IRFZ44R, SiHFZ44R
EAS , Single Pulse Avalanche Energy (mJ)
Vishay Siliconix
250
ID
21A
36A
BOTTOM 51A
TOP
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J, Junction Temperature ( ° C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
+
QGD
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91292
S-Pending-Rev. A, 17-Jul-08
IRFZ44R, SiHFZ44R
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91292.
Document Number: 91292
S-Pending-Rev. A, 17-Jul-08
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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