ON MPSW01ARLRAG One watt high current transistors npn silicon Datasheet

MPSW01, MPSW01A
One Watt High Current
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
3
2
BASE
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Symbol
MPSW01
MPSW01A
MPSW01
MPSW01A
Emitter −Base Voltage
VCEO
VCBO
Value
Unit
Vdc
30
40
Vdc
40
50
VEBO
5.0
Vdc
Collector Current − Continuous
IC
1000
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
1
EMITTER
TO−92 (TO−226AE)
CASE 29−10
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125
°C/W
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
MPS
W01x
AYWW G
G
x
= 01A Devices
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 5
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MPSW01/D
MPSW01, MPSW01A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
30
40
−
−
40
50
−
−
5.0
−
−
−
0.1
0.1
−
0.1
55
60
50
−
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0)
MPSW01
MPSW01A
Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
MPSW01
MPSW01A
V(BR)CEO
V(BR)CBO
V(BR)EBO
Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
MPSW01
MPSW01A
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
ICBO
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
−
Collector −Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc)
VCE(sat)
−
0.5
Vdc
Base−Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
−
1.2
Vdc
fT
50
−
MHz
Cobo
−
20
pF
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
MPSW01
Package
Shipping†
TO−92
5000 Units / Bulk
MPSW01G
TO−92
(Pb−Free)
5000 Units / Bulk
MPSW01AG
TO−92
(Pb−Free)
5000 Units / Bulk
MPSW01ARLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPSW01ARLRPG
TO−92
(Pb−Free)
2000 / Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1.0
VCE , COLLECTOR VOLTAGE (VOLTS)
300
h FE , CURRENT GAIN
200
100
70
VCE = 1.0 V
TJ = 25°C
50
30
10
20
50
200
100
IC, COLLECTOR CURRENT (mA)
500
1000
Figure 1. DC Current Gain
TJ = 25°C
0.8
0.6
IC =
1000 mA
0.4
0.2
IC =
10 mA
IC =
50 mA
IC =
IC = 500 mA
IC =
250 mA
100 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
IB, BASE CURRENT (mA)
10 20
Figure 2. Collector Saturation Region
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2
50 100
1.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
0.8
V, VOLTAGE (VOLTS)
qVB , TEMPERATURE COEFFICIENT (mV/° C)
MPSW01, MPSW01A
VBE(on) @ VCE = 1.0 V
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
5.0 10 20
-1.2
-1.6
qVB FOR VBE
-2.0
-2.4
-2.8
50 100 200 500 1000
1.0 2.0
5.0 10 20
50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
80
300
TJ = 25°C
200
70
VCE = 10 V
TJ = 25°C
f = 20 MHz
50
60
C, CAPACITANCE (pF)
100
40
Cibo
20
Cobo
0
30
10
20
50
200
100
1000
Cobo
Cibo
IC, COLLECTOR CURRENT (mA)
5.0
1.0
10
2.0
Figure 6. Capacitance
1k
1.0 ms 100 ms
1.0 s
500
200
TA = 25°C
100
TC = 25°C
DUTY CYCLE ≤ 10%
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
50
20
10
1.0
MPSW01
MPSW01A
2.0
5.0
15
3.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Current Gain — Bandwidth Product
IC , COLLECTOR CURRENT (mA)
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
1.0 2.0
-0.8
10
20
30 40
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 7. Active Region — Safe Operating Area
http://onsemi.com
3
20
4.0
25
5.0
MPSW01, MPSW01A
PACKAGE DIMENSIONS
TO−92 (TO−226AE)
CASE 29−10
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
F
SEATING
PLANE
L
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
D
G
H
J
R
1 2 3
N C
SECTION X−X
N
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
--0.250
--0.080
0.105
--0.100
0.135
---
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.457
0.533
0.407
0.482
1.15
1.39
2.42
2.66
0.46
0.61
12.70
--6.35
--2.04
2.66
--2.54
3.43
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MPSW01/D
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