Hanbit HMF8M8F4VS-120 Flash-rom module 8mbyte (8m x 8-bit) , smm 80pin Datasheet

HANBit
HMF8M8F4VS
FLASH-ROM MODULE 8MByte (8M x 8-Bit) , SMM 80Pin
Part No. HMF8M8F4VS
GENERAL DESCRIPTION
The HMF8M8F4VS is a high-speed flash read only memory (FROM) module containing 8,388,608 bytes organized in an x8bit
configuration. The module consists of four 2M x 8 FROM mounted on a 80-pin, SMM connector FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power
design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTLcompatible.
PIN ASSIGNMENT
FEATURES
w Part identification
P1
HMF8M8F4VS(Bottom boot block configuration)
P2
PIN
Symbol
PIN
Symbol
PIN
Symbol
PIN
Symbol
w High-density 8MByte design
1
Vcc
21
Vcc
1
Vcc
21
Vcc
w High-reliability, low-power design
2
A20
22
NC
2
/CE1
22
NC
w Single + 3V to 3.6V power supply
3
NC
23
DQ7
3
/CE2
23
NC
w 80-Pin Designed
4
NC
24
NC
4
/CE3
24
NC
5
NC
25
DQ6
5
NC(/CE4)
25
/OE
6
/RY_BY
26
NC
6
NC(/CE5)
26
/CE0
w 10-year data retention at 85 oC
7
Vss
27
Vss
7
Vss
27
Vss
w Flexible sector architecture
8
/RESET
28
DQ5
8
NC(/CE6)
28
A16
w Embedded algorithms
9
/WE
29
NC
9
NC(/CE7)
29
A0
10
A19
30
DQ4
10
NC
30
A18
11
A8
31
NC
11
NC
31
A17
12
A9
32
DQ3
12
NC
32
A7
13
A10
33
NC
13
NC
33
A6
14
Vss
34
Vss
14
Vss
34
Vss
15
A11
35
DQ2
15
NC
35
A5
16
A12
36
NC
16
NC
36
A4
17
A13
37
DQ1
17
NC
37
A3
18
A14
38
NC
18
NC
38
A2
19
A15
39
DQ0
19
NC
39
A1
20
Vcc
40
Vcc
20
Vcc
40
Vcc
w Access time: 90, 100, 120ns
40-Pin, 0.8mm Fine Pitch Connector P1,P2
w Minimum 100,000 write cycle guarantee
per sector
w Erase suspend / Erase resume
OPTIONS
MARKING
w Timing
90ns access
- 90
100ns access
-100
120ns access
-120
w Packages
SMM 80-pin
URL: www.hbe.co.kr
REV.02(August,2002)
F
1
HANBit Electronics Co., Ltd.
HANBit
HMF8M8F4VS
FUNCTIONAL BLOCK DIAGRAM
A(0 : 20)
DQ(0 :7)
A(0:20) DQ(0:7)
/CE0
/CE
/OE
/WE
/Reset
/RY-BY
U4
A(0:20) DQ(0:7)
/CE1
/CE
/OE
/WE
/Reset
/RY-BY
U3
A(0:20) DQ(0:7)
/CE2
/CE
/OE
/WE
/Reset
/RY-BY
U2
A(0:20) DQ(0:7)
/CE3
/OE
/WE
/RESET
/RY_BY
/CE
/OE
/WE
/Reset
/RY-BY
U1
PIN DESCRIPTION
PIN
A0 – A20
DQ0 – DQ31
/CE0-/CE3
FUNCTION
Address Inputs
Word / Byte selection
Vcc
Power (+3V)
Chip Enable
Vss
Ground
Output Enable
/WE
Read/Write Enable
/RESET
Hardware Reset Pin
REV.02(August,2002)
/BYTE
FUNCTION
Data Input/Output
/OE
URL: www.hbe.co.kr
PIN
/RY_BY
NC
2
Ready/Busy output
No Connection
HANBit Electronics Co., Ltd.
HANBit
HMF8M8F4VS
TRUTH TABLE
MODE
/CS
/OE
/WE
RESET
DQ
Vcc±0.3V
X
X
Vcc±0.3V
HIGH-Z
RESET
X
X
X
L
HIGH-Z
SECTOR PROTECT
L
H
L
VID
DIN, DOUT
SECTOR UNPROTECT
L
H
L
VID
DIN, DOUT
READ
L
L
H
H
DOUT
WRITE
L
H
L
H
DOUT
STANDBY
Note : X means don't care, WE0* Low byte (D0~7) Write enable, WE1* High byte(D8~15) Write enable.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
Voltage on Any Pin Relative to Vss
-0.5V to Vcc +0.5V
Voltage on Vcc Supply Relative to Vss
-0.5V to +4.0V
Output Short Circuit Current
1,600mA
-65oC to +150oC
Storage Temperature
-0oC to +70oC
Operating Temperature
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
RANGE
PARAMETER
Vcc for regulated Supply Voltage
+2.0V to 3.6V
Vcc for full voltage
+2.7V to 3.6V
DC AND OPERATING CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNITS
Input Leakage Current
VIN= VSS to VCC , VCC= VCC max
IL1
-4.0
+4.0
µA
Output Leakage Current
VOUT= VSS to VCC, VCC= VCC max
IL0
-4.0
+4.0
µA
Output High Voltage
IOH = -2.0mA, Vcc = Vcc min
VOH
0.85xVcc
Output Low Voltage
IOL = 4.0mA, Vcc = Vcc min
VOL
0.4
V
Vcc Active Read Current
/CE = VIL, ,/OE=VIL, f=5MHz
ICC1
64
mA
Vcc Active Write Current
/CE = VIL, /OE=VIH
ICC2
180
mA
Vcc Standby Current
/CE, RESET=VCC±0.3V
ICC3
20
µA
Vcc Reset Current
/RESET=Vss±0.3V,
ICC4
20
µA
URL: www.hbe.co.kr
REV.02(August,2002)
3
V
HANBit Electronics Co., Ltd.
HANBit
HMF8M8F4VS
Low Vcc Lock-Out Voltage
VLKO
1.5
V
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
MIN.
TYP.
MAX.
0.7
15
COMMENTS
Excludes 00H programming
Block Erase Time
-
Sec
prior to erasure
Byte Programming Time
-
9
Excludes system-level
µS
270
overhead
Excludes system-level
Chip Programming Time
-
18
54
sec
overhead
CAPACITANCE
PARAMETER
PARAMETER
TEST SETUP
SYMBOL
MIN.
MAX
UNIT
DESCRIPTION
CIN
Input Capacitance
VIN = 0
10
pF
COUT
Output Capacitance
VOUT = 0
10
pF
CIN2
Control Pin Capacitance
VIN = 0
10
pF
Notes: Test conditions TA = 25o C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
CL=100pF
SYMBOLS
DESCRIPTION
UNIT
-90
JEDEC
-100
-120
STANDARD
Min
Max
90
Min
Max
100
Min
Max
tAVAV
tRC
Read Cycle Time
120
ns
tELQV
tCE
Chip Enable to Output Delay
90
100
120
ns
tGLQV
tOE
Chip Enable to Output Delay
35
40
50
ns
tEHQZ
tDF
Chip Enable to Output High-Z
30
30
30
ns
tAXQX
tQH
Output Hold Time From Addresses,
0
0
0
ns
/CE or /OE, Whichever Occurs First
URL: www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
HMF8M8F4VS
TEST CONDITIONS
TEST CONDITION
VALUE
UNIT
Output load
1TTL gate
Input rise and full times
5
ns
0.0 - 3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Input pulse levels
3.3V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER SYMBOLS
CL=100pF
DESCRIPTION
JEDEC
-90
-100
-120
UNIT
STANDARD
Min
Max
Min
Max
Min
Max
tAVAV
tWC
Write Cycle Time
90
100
120
ns
tAVWL
tAS
Address Setup Time
0
0
0
ns
tWLAX
tAH
Address Hold Time
45
45
50
ns
tDVWH
tDS
Data Setup Time
45
45
50
ns
tWHDX
tDH
Data Hold Time
0
0
0
ns
tOES
Output Enable Setup Time
0
0
0
ns
Read Recover Time Before Write
0
0
0
ns
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
0
0
0
ns
tWHEH
tCH
/CE Hold Time
0
0
0
ns
tWLWH
tWP
Write Pulse Width
45
45
50
ns
tWHWL
tWPH
Write Pulse Width High
30
30
30
ns
URL: www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
HANBit
HMF8M8F4VS
9
9
9
µs
Block Erase Operation
0.7
0.7
0.7
sec
tVCS
Vcc Setup Time
50
50
50
µs
tRB
Recovery time from RY/BY
0
0
0
ns
Program/Erase Valid to RY/BY Delay
90
90
90
ns
tWHWH1
tWHWH1
tWHWH2
tBERS
tBUSY
Byte Programming Operation
u Alternate /CE Controlled Erase/Program Operations
PARAMETER SYMBOLS
CL=100pF
DESCRIPTION
-90
STANDARD
tAVAV
tWC
Write Cycle Time
90
100
120
ns
tAVEL
tAS
Address Setup Time
0
0
0
ns
tELAX
tAH
Address Hold Time
45
45
50
ns
tDVEH
tDS
Data Setup Time
45
45
50
ns
tEHDX
tDH
Data Hold Time
0
0
0
ns
tOES
Output Enable Setup Time
0
0
0
ns
tGHEL
tGHEL
Read Recover Time Before Write
0
0
0
ns
tWLEL
tWS
/OE High to /WE Low
0
0
0
ns
tEHWH
tWH
/WE Hold Time
0
0
0
ns
tELEH
tCP
/CE Pulse Width
45
45
50
ns
tEHEL
tCPH
/CE Pulse Width High
30
30
30
ns
tBUSY
Program/Erase Valid RY//BY Delay
90
90
90
ns
Recovery Time from RY//BY
0
0
0
ns
URL: www.hbe.co.kr
REV.02(August,2002)
6
Max
Min
Max
UNIT
-120
JEDEC
tRB
Min
-100
Min
Max
HANBit Electronics Co., Ltd.
HANBit
HMF8M8F4VS
TIMING DIAGRAMS
Notes :
1. DQ7 is the output of the complement of the data written to the device.
2. DOUT is the output of the data written to the device.
3. PA : Program Address, PD : Program Data
URL: www.hbe.co.kr
REV.02(August,2002)
7
HANBit Electronics Co., Ltd.
HANBit
HMF8M8F4VS
4. The illustration shows the last two cycles of the program command sequence.
Notes :
1. DQ7 is the output of the complement of the data written to the device.
2. DOUT is the output of the data written to the device.
3. PA : Program Address, PD : Program Data
4. The illustration shows the last two cycles of the program command sequence.
URL: www.hbe.co.kr
REV.02(August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
URL: www.hbe.co.kr
REV.02(August,2002)
HMF8M8F4VS
9
HANBit Electronics Co., Ltd.
HANBit
HMF8M8F4VS
PACKAGE DIMENSIONS
UNIT: mm
Front-Side
Rear-Side
URL: www.hbe.co.kr
REV.02(August,2002)
10
HANBit Electronics Co., Ltd.
HANBit
HMF8M8F4VS
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF8M8F4VS-90
8MByte
8M x 8
80Pin -SMM
HMF8M8F4VS-100
8MByte
8M x 8
HMF8M8F4VS-120
8MByte
8M x 8
URL: www.hbe.co.kr
REV.02(August,2002)
Component
Vcc
SPEED
4EA
3.3V
90ns
80Pin -SMM
4EA
3.3V
100ns
80Pin -SMM
4EA
3.3V
120ns
11
Number
HANBit Electronics Co., Ltd.
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