Diodes FCX458 400v npn high voltage transistor Datasheet

FCX458
400V NPN HIGH VOLTAGE TRANSISTOR IN SOT89
Features
Mechanical Data





BVCEO > 400V
IC = 225mA Continuous Collector Current
ICM = 500mA Peak Pulse Current
Excellent hFE Characteristics up to 100mA
Low saturation voltage VCE(sat) < 200mV @ 20mA






Complementary PNP Type: FCX558
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability


SOT89

Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads,
Solderable per MIL-STD-202, Method 208
Weight: 0.055 grams (Approximate)
C
E
C
C
B
B
E
Top View
Top View
Pin-Out
Equivalent Circuit
Ordering Information (Note 4)
Product
FCX458TA
Notes:
Compliance
AEC-Q101
Marking
N58
Reel size (inches)
7
Tape width (mm)
12mm
Quantity per reel
1,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N1
N58
FCX458
Document number: DS33053 Rev. 7 - 2
N58 = Product Type Marking Code
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
400
V
Collector-Emitter Voltage
VCEO
400
V
VEBO
7
V
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
IC
225
mA
ICM
500
mA
IB
200
mA
Base Current
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Value
PD
RJA
(Note 9)
Operating and Storage Temperature Range
Unit
0.7
1
1.5
2
178
125
83
60
W
°C/W
RJL
22
TJ, TSTG
-65 to +150
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on minimum recommended pad layout (MRP) 1oz copper that is on a single-sided
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted with the exposed collector pad on 15mm x 15mm 1oz copper.
7. Same as Note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper.
8. Same as Note 5, except the device is mounted with the exposed collector pad on 50mm x 50mm 1oz copper.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
140.0
3
120.0
100.0
80.0
1oz copper
60.0
Maximum Power (W)
Thermal Resistance (°C/W)
Thermal Characteristics and Derating Information
2oz copper
40.0
0
500
1000
1500
Document number: DS33053 Rev. 7 - 2
2oz copper
2
1oz copper
1
0
2000
2500
Copper Area (sqmm)
FCX458
T A=25°C
0
500
1000
1500
2000
2500
Copper Area (sqmm)
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FCX458
15mm x 15mm 1oz FR4 PCB
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
MRP 1oz FR4 PCB
0.8
0.6
0.4
0.2
0.0
0
40
60
80
100 120 140 160
Derating Curve
Derating Curve
100
15mm x 15mm 1oz FR4 PCB
Single Pulse
T A=25°C
10
1
100µ
1m
Pulse Width (s)
10m 100m
1
1k
100
160 MRP 1oz FR4 PCB
Maximum Power (W)
MRP 1oz FR4 PCB
140
120
100 D=0.5
80
40
100
Pulse Power Dissipation
180
60
10
Pulse Width (s)
Transient Thermal Impedance
Thermal Resistance (°C/W)
20
Temperature (°C)
130
120 15mm x 15mm 1oz FR4 PCB
110
100
90
80
70 D=0.5
60
50
40 D=0.2
Single Pulse
30
D=0.05
20
10
D=0.1
0
100µ 1m 10m 100m 1
10
100
1k
Thermal Resistance (°C/W)
1.0
Temperature (°C)
Maximum Power (W)
Max Power Dissipation (W)
1.2
Max Power Dissipation (W)
Thermal Characteristics and Derating Information (cont.)
Single Pulse
D=0.2
D=0.05
20
0
100µ
D=0.1
1m
10m 100m
1
10
100
Pulse Width (s)
1k
Single Pulse
T A=25°C
10
1
100µ
Document number: DS33053 Rev. 7 - 2
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
FCX458
1m
Pulse Power Dissipation
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FCX458
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
Characteristic
BVCBO
400
550
—
V
IC = 100µA
Collector-Emitter Breakdown Voltage
BVCES
400
550
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
400
450
—
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
7
8.1
—
V
IE = 100µA
ICBO
—
<1
100
nA
VCB = 320V
Collector Cutoff Current
ICES
—
<1
100
nA
VCES = 320V
Emitter Cutoff Current
IEBO
—
<1
20
nA
VEB = 6V
—
—
—
—
200
500
mV
IC = 20mA, IB = 2mA
IC = 50mA, IB = 6mA
Collector-Base Cutoff Current
Test Condition
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
Base-Emitter Saturation Voltage (Note 11)
VBE(sat)
—
—
900
mV
IC = 50mA, IB = 5mA
VBE(on)
—
—
900
mV
IC = 50mA, VCE = 10V
hFE
100
100
15
—
300
—
IC = 1mA, VCE = 10V
IC = 50mA, VCE = 10V
IC = 100mA, VCE = 10V
fT
50
—
—
MHz
IC = 10mA, VCE = 20V,
f = 20MHz
Base-Emitter Turn-On Voltage (Note 11)
DC Current Gain (Note 11)
Transitional Frequency
Cobo
—
—
5
pF
VCB = 20V. f = 1MHz
Turn-On Time
ton
—
135
—
ns
Turn-Off Time
toff
—
2260
—
ns
IC =50mA, VCE=100V,
IB1 = 5mA, IB2 = -10mA
Output Capacitance
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
FCX458
Document number: DS33053 Rev. 7 - 2
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FCX458
Typical Electrical Characteristics
FCX458
Document number: DS33053 Rev. 7 - 2
(@TA = +25°C, unless otherwise specified.)
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
D1
0
.20
c
R0
SOT89
Dim Min
Max
Typ
A
1.40
1.60
1.50
B
0.50
0.62
0.56
B1
0.42
0.54
0.48
c
0.35
0.43
0.38
D
4.40
4.60
4.50
D1
1.62
1.83 1.733
D2
1.61
1.81
1.71
E
2.40
2.60
2.50
E2
2.05
2.35
2.20
e
1.50
H
3.95
4.25
4.10
H1
2.63
2.93
2.78
L
0.90
1.20
1.05
L1 0.327 0.527 0.427
z
0.20
0.40
0.30
All Dimensions in mm
H
E
B1
L
B
e
D2
8°
(4
X)
H1
E2
A
L1
D
z
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2
Dimensions
Y1
Y4
X
Y
C
G
X
X1
X2
Y
Y1
Y2
Y3
Y4
Y3
G
Y2
Value
(in mm)
1.500
0.244
0.580
0.760
1.933
1.730
3.030
1.500
0.770
4.530
X1
C
Note:
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device terminals and PCB tracking.
FCX458
Document number: DS33053 Rev. 7 - 2
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2017, Diodes Incorporated
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FCX458
Document number: DS33053 Rev. 7 - 2
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