UMS CHA6250-QFG 5.5-9ghz power amplifier Datasheet

CHA6250-QFG
5.5-9GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6250-QFG is a three stages
monolithic GaAs high power circuit that
produces more than 2 Watt output power.
It is designed for commercial communication
systems.
The circuit is manufactured with a pHEMT
process, 0.5µm gate length.
Main Features
Output power at 1dB comp.
■ Broadband performances: 5.5- 9GHz
■ 23.5dB Linear Gain
■ 33.5dBm output power @1dB comp.
■ 43dBm output TOI
■ 29% PAE@ 1dB compression
■ DC bias: Vd=7Volt@Id=0.9A
■ 32L-QFN5x5
36
35
Output P1dB (dB)
34
33
32
31
Temp=25°C
Temp=-40°C
30
Temp=+85°C
29
28
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq
Frequency range
Gain
Linear Gain
OTOI
Output TOI
Pout
Output Power @1dB comp.
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
Min
5.5
Typ
Max
9.0
23.5
43.0
33.5
1/14
Unit
GHz
dB
dBm
dBm
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +7.0V
Symbol
Parameter
Freq
Frequency range
Gain
Linear Gain
G_T
Linear Gain variation versus Temperature
RL_in
Input Return Loss
RL_out
Output Return Loss
OP1dB
Output power @1dB comp. [5.5 - 6.8GHz]
Output power @1dB comp. [6.8 - 9GHz]
Psat
Saturated output power
OTOI
Output TOI
PAE
Power Added Efficiency @ 1dB compression
Idq
Quiescent Drain current
Vg
Gate voltage
These values are representative of onboard measurements
paragraph "Evaluation mother board".
Min
5.5
21
Typ
Max
9
27
Unit
GHz
23.5
dB
-0.03
dB/°C
-18
dB
-14
dB
32.5
33.5
dBm
31.5
32.5
dBm
34.5
dBm
43
dBm
29
%
900
1000
mA
-0.5
V
as defined on the drawing in
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
7.5V
V
Idq
Drain bias current
1.06
A
Vg
Gate bias voltage
-2 to +0
V
Pin
Input continuous power
15
dBm
(2)
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad No
VD1
30
VD2
28
VD3
25
VG
13
Parameter
DC Drain voltage 1st stage
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage tuned for Idq= 0.9A
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
2/14
Values
7
7
7
-0.5
Unit
V
V
V
V
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below than the maximum value specified in the next table. So, the system PCB must
be designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below than the maximum temperature specified (see the curve Pdiss. Max) in
order to guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA6250-QFG
Recommended max. junction temperature (Tj max)
:
169
Junction temperature absolute maximum rating
:
175
Max. continuous dissipated power (Pdiss. Max.)
:
6.3
=> Pdiss. Max. derating above Tcase(1)= 85
°C :
75
Junction-Case thermal resistance (Rth J-C)(2)
:
<13
Minimum Tcase operating temperature(3)
:
-40
Maximum Tcase operating temperature(3)
:
85
Minimum storage temperature
:
-55
Maximum storage temperature
:
150
°C
°C
W
mW/°C
°C/W
°C
°C
°C
°C
(1) Derating at junctio n temperature co nstant = Tj max.
(2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased.
(3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w).
7
5
4
3
2
1
Pdiss. Max. @Tj <Tj max (W)
0
-50
-25
0
25
50
75
100
125
150
175
Pdiss. Max. @Tj <Tj max (W)
6
Tcase
Example: QFN 16L 3x3
Location of temperature
reference point (Tcase)
on package's bottom side
Tcase (°C)
6.4
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
3/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Idq = 900mA
Measurement in the plan of the connectors, using the proposed land pattern & board, as
defined in paragraph “Evaluation mother board”
30
5
25
0
20
-5
15
-10
10
-15
5
-20
0
-25
Linear Gain
RL_in
RL_out
-5
Return Loss (dB)
Linear Gain (dB)
Linear Gain & Return Loss
-30
-10
-35
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency (GHz)
Linear Gain versus temperature
30
Linear Gain (dB)
25
20
15
Temp=25°C
10
Temp=-40°C
Temp=+85°C
5
0
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency (GHz)
1-
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
4/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Idq = 900mA
Measurement in the QFN access plans, using the proposed land pattern & board, as defined
in paragraph “Evaluation mother board”
Output power at 1 dB Compression
36
35
Output P1dB (dB)
34
33
32
31
Temp=25°C
Temp=-40°C
30
Temp=+85°C
29
28
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
9.5
10
Frequency (GHz)
Power Added Efficiency at 1 dB Compression
40
35
PAE (%)
30
25
Temp=25°C
20
Temp=-40°C
Temp=+85°C
15
10
5
5.5
6
6.5
7
7.5
8
8.5
9
Frequency (GHz)
2-
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
5/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Idq = 900mA
Drain current at 1 dB Compression
1.8
1.6
1.4
Id (A)
1.2
1
0.8
0.6
Temp=25°C
Temp=-40°C
0.4
Temp=+85°C
0.2
0
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency (GHz)
Output TOI (dBm) at two Pout/Tone
48
47
Output TOI (dBm)
46
45
44
43
42
Pout/Tone=14.5 dBm
41
Pout/Tone=20.5 dBm
40
39
6
6.5
7
7.5
8
8.5
9
Frequency (GHz)
3-
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
6/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Idq = 900mA
Output C/I3 (dBc) versus Pout / 2 Tones
80
Freq=6 GHz
Freq=7 GHz
Freq=8 GHz
Freq=9 GHz
75
70
C/I3 (dBc)
65
60
55
50
45
40
35
10
12
14
16
18
20
22
24
26
28
Pout/2Tones (dBm)
4-
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
7/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C
Linear gain vs Vd at 0.9A
Linear gain vs Vd at 1A
30
28
24
Linear Gain (dB)
Linear Gain (dB)
26
22
20
18
16
14
5V
12
6V
7V
10
5
6
7
8
9
30
28
26
24
22
20
18
16
14
12
10
5V
5
10
6
7
Frequency (GHz)
Output P1dB (dBm)
5
6V
6
7
7V
8
9
36
35
34
33
32
31
30
29
28
27
26
25
10
5V
5
6
6.5
7
7.5
Output TOI (dBm)
Output TOI (dBm)
10
9
10
7V
8
Output TOI at Pout/ Tone= 13dBm
7V- 0.9A
6V- 0.9A
5V- 1A
6
9
Frequency (GHz)
Output TOI at Pout/ Tone= 7dBm
5.5
6V
7
Frequency (GHz)
50
48
46
44
42
40
38
36
34
32
30
8
Power at 1dB vs Vd at 1A
Output P1dB (dBm)
5V
7V
Frequency (GHz)
Power at 1dB vs Vd at 0.9A
36
35
34
33
32
31
30
29
28
27
26
25
6V
8
8.5
9
9.5
50
48
46
44
42
40
38
36
34
32
30
7V- 0.9A
6V- 0.9A
5V- 1A
5.5
6
6.5
Frequency (GHz)
7
7.5
8
8.5
9
9.5
Frequency (GHz)
Output TOI (dBm)
Output TOI at Pout/ Tone= 19dBm
50
48
46
44
42
40
38
36
34
32
30
7V- 0.9A
6V- 0.9A
5V- 1A
5.5
6
6.5
7
7.5
8
8.5
9
9.5
Frequency (GHz)
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
8/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Package outline (1)
Matt tin, Lead Free
Units :
From the standard :
(Green)
mm
JEDEC MO-220
(VGGD)
33- GND
1234567891011-
Nc
Nc
Gnd(2)
RF IN
Gnd(2)
Nc
Nc
Nc
Nc
Nc
Nc
1213141516171819202122-
Gnd(2)
VG
Nc
Nc
Nc
Nc
Nc
Nc
Gnd(2)
RF OUT
Gnd(2)
23242526272829303132-
Nc
Nc
VD3
Gnd(2)
Nc
VD2
Gnd(2)
VD1
Nc
Nc
(1)
The package outline drawing included to this data-sheet is given for indication. Refer to the
application note AN0017 (http://www.ums-gaas.com) for exact package dimensions.
(2)
It is strongly recommended to ground all pins marked “Gnd” through the PCB board.
Ensure that the PCB board is designed to provide the best possible ground to the package.
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
9/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Evaluation mother board
■ Compatible with the proposed footprint.
■ Based on typically Ro4003 / 8mils or equivalent.
■ Using a micro-strip to coplanar transition to access the package.
■ Recommended for the implementation of this product on a module board. Module
should be designed to dissipate around 6.3W
■ First decoupling network is done with 100pF capacitors, second decoupling network is
done with 10nF capacitors.
■ See application note AN0017 for details.
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
10/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Notes
Due to ESD protection circuits on RF input, an external capacitance might be requested to
isolate the product from external voltage that could be present on the RF access.
30
28
25
VD1
VD2
VD3
RF IN
RF OUT
4
21
VG
13
The DC connections do not include any decoupling capacitor in package, therefore it is
mandatory to provide a good external DC decoupling (100pF & 10nF) on the PC board, as
close as possible to the package.
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
11/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
DC Schematic
7V, 900mA
VD1
VD2
VD3
520 mA
255 mA
125 mA
RF OUT
RF IN
15 
VG # -0.5 V
100 
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
50 
12/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Note
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
13/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Recommended package footprint
Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot
print recommendations.
SMD mounting procedure
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS package products.
Ordering Information
QFN 5x5 RoHS compliant package:
CHA6250-QFG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
14/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
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