2N6344A, 2N6348A, 2N6349A Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. http://onsemi.com TRIACS 12 AMPERES RMS 600 thru 800 VOLTS Features • Blocking Voltage to 800 V • All Diffused and Glass Passivated Junctions for Greater Parameter • • • • • MT2 MT1 G Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in all Four Quadrants For 400 Hz Operation, Consult Factory 8.0 A Devices Available as 2N6344 thru 2N6349 Pb−Free Packages are Available* MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 4 1 2 2N634xAG AYWW 3 2N634xA = Device Code x = 4, 8, or 9 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 4 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N6344A/D 2N6344A, 2N6348A, 2N6349A MAXIMUM RATINGS Characteristics Symbol *Peak Repetitive Off−State Voltage (Note 1) (Gate Open, TJ = −40 to +110°C, Sine Wave 50 to 60 Hz, Gate Open) Value VDRM, VRRM 2N6344A, 2N6348A 2N6349A *On−State RMS Current (Full Cycle Sine Wave 50 to 60 Hz) V 600 800 IT(RMS) (TC = +80°C) (TC = +95°C) *Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.3 ms) *Peak Gate Power (TC = +80°C, Pulse Width = 2.0 ms) *Average Gate Power (TC = +80°C, t = 8.3 ms) Unit A 12 6.0 ITSM 100 A I2t 59 A2s PGM 20 W PG(AV) 0.5 W *Peak Gate Current (Pulse Width = 2.0 ms; TC = +80°C) IGM 2.0 A *Peak Gate Voltage (Pulse Width = 2.0 ms; TC = +80°C) VGM "10 V *Operating Junction Temperature Range TJ −40 to +125 °C *Storage Temperature Range Tstg −40 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Indicates JEDEC Registered Data. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic *Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Max Unit RqJC 2.0 °C/W TL 260 °C ORDERING INFORMATION Device Package 2N6344A TO−220AB 2N6344AG TO−220AB (Pb−Free) 2N6348A TO−220AB 2N6348AG TO−220AB (Pb−Free) 2N6349A TO−220AB 2N6349AG TO−220AB (Pb−Free) http://onsemi.com 2 Shipping 500 Units / Box 2N6344A, 2N6348A, 2N6349A ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in either direction) Characteristic Symbol Min Typ Max Unit − − − − 10 2.0 mA mA − 1.3 1.75 V OFF CHARACTERISTICS *Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 110°C IDRM, IRRM ON CHARACTERISTICS *Peak On-State Voltage (ITM = "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) VTM Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 W) Quadrant I: MT2(+), G(+) Quadrant II: MT2(+), G(−) Quadrant III: MT2(−), G(−) Quadrant IV: MT2(−), G(+) *MT2(+), G(+); MT2(−), G(−) TC = −40°C *MT2(+), G(−); MT2(−), G(+) TC = −40°C IGT Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 W) Quadrant I: MT2(+), G(+) Quadrant II: MT2(+), G(−) Quadrant III: MT2(−), G(−) Quadrant IV: MT2(−), G(+) *MT2(+), G(+); MT2(−), G(−) TC = −40°C *MT2(+), G(−); MT2(−), G(+) TC = −40°C All 2N6348A and 2N6349A only All 2N6348A and 2N6349A only mA − − − − − − 6.0 6.0 10 25 − − 50 75 50 75 100 125 VGT All 2N6348A and 2N6349A only All 2N6348A and 2N6349A only Gate Non−Trigger Voltage (VD = Rated VDRM, RL = 10 k W, TJ = 110°C) *MT2(+), G(+); MT2(−), G(−); MT2(+), G(−); MT2(−), G(+) Holding Current (VD = 12 Vdc, Gate Open) Initiating Current = "200 mA V − − − − − − 0.9 0.9 1.1 1.4 − − 2.0 2.5 2.0 2.5 2.5 3.0 0.2 − − − − 6.0 − 40 75 tgt − 1.5 2.0 ms dv/dt(c) − 5.0 − V/ms VGD IH TC = 25°C *TC = −40°C *Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms) V mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = 80°C) *Indicates JEDEC Registered Data. http://onsemi.com 3 2N6344A, 2N6348A, 2N6349A Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II 2N6348A 2N6349A (+) MT2 Quadrant I (+) IGT GATE (−) IGT GATE All MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III All Quadrant 1 MainTerminal 2 + (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 4 2N6348A 2N6349A + Voltage IDRM at VDRM 2N6344A, 2N6348A, 2N6349A 110 20 dc PAV , AVERAGE POWER (WATTS) TC , CASE TEMPERATURE ( °C) 30° 60° 100 90° 120° 180° 90 α α 80 α = CONDUCTION ANGLE α 16 α 12 α = CONDUCTION ANGLE TJ = 110°C 8.0 90° 60 α = 30° ° 4.0 dc 70 0 2.0 4.0 6.0 8.0 10 12 IT(RMS), RMS ON-STATE CURRENT, (AMP) 0 14 0 2.0 Figure 1. RMS Current Derating I GT , GATE TRIGGER CURRENT (mA) 1.4 QUADRANT 4 1.2 1.0 1 QUADRANTS 2 0.6 0.4 −60 12 14 50 VD = 12 V 1.6 0.8 4.0 6.0 8.0 10 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 2. On−State Power Dissipation 1.8 Vgt , GATE TRIGGER VOLTAGE (VOLTS) 180° 120° 3 −40 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 VD = 12 V 30 20 10 QUADRANT 7.0 5.0 −60 Figure 3. Typical Gate Trigger Voltage −40 1 2 3 4 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 Figure 4. Typical Gate Trigger Current http://onsemi.com 5 2N6344A, 2N6348A, 2N6349A 100 20 GATE OPEN I H , HOLDING CURRENT (mA) 70 50 30 TJ = 100°C 25°C 10 7.0 5.0 MAIN TERMINAL #2 POSITIVE 10 3.0 7.0 2.0 −60 5.0 60 0 20 40 80 100 TJ, JUNCTION TEMPERATURE (°C) −20 120 140 Figure 6. Typical Holding Current 2.0 100 1.0 0.7 0.5 0.3 0.2 0.1 0.4 80 60 CYCLE 40 TJ = 100°C f = 60 Hz Surge is preceded and followed by rated current 20 0 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 vTM, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 1.0 Figure 5. On−State Characteristics r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) −40 3.0 I TSM , PEAK SURGE CURRENT (AMP) i TM , INSTANTANEOUS ON-STATE CURRENT (AMP) 20 MAIN TERMINAL #1 POSITIVE 2.0 3.0 5.0 NUMBER OF CYCLES 7.0 10 Figure 7. Maximum Non−Repetitive Surge Current 1.0 0.5 0.2 ZqJC(t) = r(t) • RqJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 t,TIME (ms) 100 200 Figure 8. Typical Thermal Response http://onsemi.com 6 500 1.0 k 2.0 k 5.0 k 10 k 2N6344A, 2N6348A, 2N6349A PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA −T− B F T SEATING PLANE C S 4 Q A 1 2 3 U H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6344A/D