ONSEMI NTGS1135PT1G

NTGS1135P
Power MOSFET
−8 V, −5.8 A, Single P−Channel, TSOP−6
Features
• Ultra Low RDS(on)
• 1.2 V RDS(on) Rating
• This is a Pb−Free Device
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V(BR)DSS
Applications
• Load Switch
• Battery Management
RDS(ON) MAX
31 mW @ −4.5 V
38 mW @ −2.5 V
−8 V
Parameter
300 mW @ −1.2 V
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−8.0
V
P−Channel
Gate−to−Source Voltage
VGS
$6.0
V
1 2 5 6
ID
−4.6
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
−3.3
tv5s
TA = 25°C
−5.8
Steady
State
PD
Pulsed Drain Current
A
3
0.97
TA = 25°C
W
tv5s
4
1.6
IDM
−9.2
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−1.0
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
tp = 10 ms
Operating Junction and Storage Temperature
−4.6 A
57 mW @ −1.8 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Continuous Drain
Current (Note 1)
ID MAX
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1 in sq
[2 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
(Cu area = 0.0751 in sq)
MARKING
DIAGRAM
1
TSOP−6
CASE 318G
STYLE 1
AA MG
G
1
AA
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 5 4
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Junction−to−Ambient – Steady State (Note 1)
RqJA
128
Junction−to−Ambient – t = 5 s (Note 1)
RqJA
78
Junction−to−Ambient – Steady State (Note 2)
RqJA
188
Unit
1
°C/W
2
3
Drain Drain Gate
ORDERING INFORMATION
Device
NTGS1135PT1G
Package
Shipping†
TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
October, 2008 − Rev. 0
1
Publication Order Number:
NTGS1135P/D
NTGS1135P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)DSS
VGS = 0 V, ID = −250 mA
−8.0
V(BR)DSS/
TJ
ID = −250 mA, Ref to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = −6 V
−1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±6 V
$100
nA
VGS(TH)
VGS = VDS, ID = −250 mA
−0.85
V
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
V
−8.4
mV/°C
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/
TJ
RDS(on)
gFS
−0.35
−0.57
2.8
mV/°C
VGS = −4.5 V, ID = −4.6 A
22
31
VGS = −2.5 V, ID = −2.5 A
28
38
VGS = −1.8 V, ID = −2.0 A
37
57
mW
VGS = −1.5 V, ID = −1.0 A
47
73
VGS = −1.2 V, ID = −0.1 A
100
300
VDS = −4.0 V, ID = −3.0 A
1.2
S
2200
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
VGS = 0 V, f = 1 MHz, VDS = −6.0 V
400
CRSS
200
Total Gate Charge
QG(TOT)
21
Threshold Gate Charge
QG(TH)
VGS = −4.5 V, VDS = −8.0 V;
ID = −2.5 A
nC
0.9
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
2.8
3.9
td(ON)
10
tr
16
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(OFF)
VGS = −4.5 V, VDS = −8.0 V,
ID = −2.5 A, RG = 6.2 W
tf
ns
128
71
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = −1.0 A
TJ = 25°C
−0.6
25
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −1.0 A
QRR
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2
V
ns
11
14
13
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
−1.0
nC
NTGS1135P
TYPICAL CHARACTERISTICS
10
−1.8 V
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
VDS ≥ −10 V
−1.6 V
−2.5 V
−2.0 V
8
TJ = 25°C
6
−1.4 V
4
2
VGS = −1.2 V
0
0.5
1.0
1.5
2.0
2.5
6
4
TJ = −55°C
2
TJ = 125°C
0.6
0.8
1.2
1.0
1.4
1.6
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = −4.6 A
TJ = 25°C
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2.0
3.0
4.0
5.0
6.0
7.0
−VGS, GATE−TO−SOURCE VOLTAGE (V)
0.14
1.8
TJ = 25°C
0.12
VGS = −1.2 V
0.10
0.08
VGS = −1.5 V
0.06
VGS = −1.8 V
0.04
VGS = −2.5 V
0.02
0
VGS = −4.5 V
0
1.0
2.0
3.0
5.0
4.0
6.0
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.4
100000
ID = −4.6 A
VGS = −4.5 V
VGS = 0 V
1.2
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.08
0
1.0
8
0
0.4
3.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10
−4.5 V
10000
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
TJ = 150°C
TJ = 125°C
1000
1
TJ, JUNCTION TEMPERATURE (°C)
2
3
4
5
6
7
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
8
NTGS1135P
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
2500
−VGS, GATE−TO−SOURCE VOLTAGE (V)
3000
VGS = 0 V
TJ = 25°C
Ciss
2000
1500
1000
Coss
500
0
Crss
0
1
2
3
4
5
6
7
8
4.0
3.0
2.0
Qgs
Qgd
1.0
0
TJ = 25°C
ID = −4.6 A
0
2.0 4.0
6.0 8.0
10
12
14
16
20
18
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
22
1.4
VDD = −8 V
ID = −4.6 A
VGS = −4.5 V
td(off)
−IS, SOURCE CURRENT (A)
t, TIME (ns)
Qt
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
tf
100
tr
td(on)
10
1.0
5.0
1.0
10
1.0
0.8
0.6
0.4
0.2
0
100
VGS = 0 V
TJ = 25°C
1.2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTGS1135P
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
e
c
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
DIM
A
A1
b
c
D
E
e
L
HE
q
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTGS1135P/D