MOTOROLA Order this document by MPS4250/D SEMICONDUCTOR TECHNICAL DATA Transistor MPS4250 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Emitter Voltage VCES –40 Vdc Collector – Base Voltage VCBO –40 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC — mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 mW mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)CES –40 — Vdc V(BR)CEO(sus) –40 — Vdc Collector – Base Breakdown Voltage (IC = –10 mA) V(BR)CBO –40 — Vdc Emitter – Base Breakdown Voltage (IE = –10 mA) V(BR)EBO –5.0 — Vdc — — –10 –3.0 nA mA — –20 nA Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –5.0 mA) Collector – Emitter Sustaining Voltage(1) (IC = –5.0) Collector Cutoff Current (VCB = –50 V) (VCB = –40 V, TA = 65°C) ICBO Emitter Cutoff Current (VEB = –3.0 V) IEBO 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPS4250 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 250 250 — — Unit ON CHARACTERISTICS DC Current Gain (IC = –1.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V) hFE — Collector – Emitter Saturation Voltage(1) (IC = –10 mA, IB = –0.5 mA) VCE(sat) — –0.25 Vdc Base – Emitter Saturation Voltage(1) (IC = –10 mA, IB = –0.5 mA) VBE(sat) — –0.9 Vdc Output Capacitance (VCB = –5.0 V, f = 1.0 MHz) Cobo — 6.0 pF Input Capacitance (VEB = –0.5 V, f = 1.0 MHz) Cibo — 16 pF 250 2.0 800 — — — 2.0 2.0 SMALL– SIGNAL CHARACTERISTICS Small–Signal Current Gain (IC = –1.0 mA, VCE = –5.0 V, f = 1.0 kHz) (IC = –0.5 mA, VCE = –5.0 V, f = 20 MHz) hfe Noise Figure (IC = –20 mA, VCE = –5.0 V, RS = 10 kΩ, f = 1.0 kHz, PBW = 150 Hz) (IC = –250 mA, VCE = –5.0 V, RS = 1.0 kΩ, f = 1.0 kHz, PBW = 150 Hz) NF — dB 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS4250 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 3 MPS4250 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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