Infineon BBY59 Silicon tuning diode Datasheet

BBY59...
Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
for VCO's in moblie communications equipment
For control elements as TCXOS and VCXOS
High capacitance ratio and good C-V linearity
BBY59-02V
1
2
Type
Package
Configuration
BBY59-02V
SC79
single
LS (nH) Marking
0.6
RR
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
15
V
Forward current
IF
50
mA
Operating temperature range
Top
-55 ... 150
°C
Storage temperature
Tstg
-55 ... 150
1
Value
Unit
Jul-18-2002
BBY59...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC Characteristics
Reverse current
IR
nA
VR = 10 V
-
-
20
VR = 10 V, TA = 85 °C
-
-
100
AC Characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
26,6
27.8
29
VR = 2 V, f = 1 MHz
13.6
15.3
17
VR = 3 V, f = 1 MHz
8,4
9.5
10.9
VR = 4 V, f = 1 MHz
6,1
6,95
7,8
3,4
4
4,6
-
0.45
0.7
Capacitance ratio
CT1 /CT4
VR = 1 V, VR = 4 V
Series resistance
rS
VR = 1 V, f = 470 MHz
2
Jul-18-2002
BBY59...
Diode capacitance CT = (VR )
Temperature coefficient of the diode
f = 1MHz
capacitance TCC = (VR )
60
0.00095
1/°C
pF
0.00085
0.0008
45
0.00075
40
0.0007
TCC
CT
50
0.00065
35
0.0006
30
0.00055
25
0.0005
20
0.00045
0.0004
15
0.00035
10
5
0
0.0003
0.5
1
1.5
2
2.5
3
V
0.00025
4
VR
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
VR
3
Jul-18-2002
Similar pages