IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current capability PG-TO220-2-2 • Pb-free lead plating; RoHs compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type Package IDT05S60C PG-TO220-2-2 Marking I F=5 A, T j=25 °C D05S60C Pin 1 Pin 2 C A Maximum ratings, at T j=25 °C, unless otherwise specified Value Parameter Symbol Conditions Continuous forward current IF T C<140 °C RMS forward current I F,RMS f =50 Hz 7.5 T C=25 °C, t p=10 ms 42 Surge non-repetitive forward current, I F,SM sine halfwave 5 Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D =0.1 21 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 180 i ²t value ∫i 2dt T C=25 °C, t p=10 ms 9 Repetitive peak reverse voltage V RRM Diode ruggedness dv/dt dv /dt Power dissipation P tot Operating and storage temperature T j, T stg Mountig torque Rev. 2.1 Unit A A2s 600 V VR = 0…480V 50 V/ns T C=25 °C 55 W -55 ... 175 °C M3 and M3.5 screws page 1 60 Ncm 2008-06-06 IDT05S60C Parameter Values Symbol Conditions Unit min. typ. max. - - 2.7 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6mm ( 0.063in.) from case for 10s - - 260 °C 600 - - V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.07 mA Diode forward voltage VF I F=5 A, T j=25 °C - 1.5 1.7 I F=5 A, T j=150 °C - 1.7 2.1 V R=600 V, T j=25 °C - 0.6 70 V R=600 V, T j=150 °C - 2.5 700 - 12 - nC - - <10 ns pF Reverse current IR µA AC characteristics Total capacitive charge Qc Switching time3) tc V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C Total capacitance C V R=1 V, f =1 MHz - 240 - V R=300 V, f =1 MHz - 30 - V R=600 V, f =1 MHz - 30 - 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA. 3) tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 4) Rev. 2.1 Only capacitive charge occuring, guaranteed by design. page 2 2008-06-06 IDT05S60C 2 Diode forward current P tot=f(T C) I F=f(T C); T j≤175 °C parameter: RthJC(max) parameter: R thJC(max); V F(max) 60 15 50 12.5 40 10 I F [A] P tot [W] 1 Power dissipation 30 7.5 20 5 10 2.5 0 0 25 50 75 100 125 150 175 200 25 50 75 100 T C [°C] 125 150 175 200 T C [°C] 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current I F=f(V F); t p=400 µs mode parameter: T j I F=f(V F); t p=400 µs; parameter: Tj 15 60 175 °C 100 °C 150 °C 50 10 40 I F [A] I F [A] -55 °C 25 °C 5 175 °C 30 25 °C 100 °C 20 150 °C 10 -55 °C 0 0 0 1 2 3 4 V F [V] Rev. 2.1 0 2 4 6 8 V F [V] page 3 2008-06-06 IDT05S60C 5 Typ. forward power dissipation vs. 6 Typ. reverse current vs. reverse voltage average forward current I R=f(V R) P F,AV=f(I F), T C=100 °C, parameter: D =t p/T parameter: T j 102 30 1 0.1 25 101 0.5 20 100 175ºC I R [µA] P F(AV) [W] 0.2 15 150ºC 100ºC 10-1 10 25ºC 10-2 -55ºC 5 10-3 100 0 0 2 4 6 8 10 12 200 300 400 500 600 V R [V] I F(AV) [A] 7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p) C =f(V R); T C=25 °C, f =1 MHz parameter: D =t p/T 101 300 250 0.5 100 200 C [pF] Z thJC [K/W] 0.2 0.1 0.05 150 0.02 10-1 100 0.01 single pulse 50 10-2 10-5 0 10-4 10-3 10-2 10-1 100 100 101 102 103 V R [V] t p [s] Rev. 2.1 10-1 page 4 2008-06-06 IDT05S60C 10 Typ. capacitance charge vs. current slope E C=f(V R) Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max 7 14 6 12 5 10 4 8 Q c [nC] E c [µC] 9 Typ. C stored energy 3 2 4 1 2 0 0 0 100 200 300 400 500 600 100 400 700 1000 di F/dt [A/µs] V R [V] Rev. 2.1 6 page 5 2008-06-06 IDT05S60C PG-TO220-2-2: Outline Dimensions in mm/inches Rev. 2.1 page 6 2008-06-06 IDT05S60C Rev. 2.1 page 7 2008-06-06