Panasonic MA6J784 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA6J784
Silicon epitaxial planar type
Unit: mm
2.0±0.1
(0.65)(0.65)
5
4
1
2
3
0.7±0.1
• IF(AV) = 100 mA rectification is possible
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• Low forward voltage VF and good rectification efficiency
5˚
Rating
Unit
VR
30
V
Repetitive peak reverse voltage
VRRM
30
V
Average forward current *2
IF(AV)
100
mA
IFM
300
mA
IFSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Peak forward current
*2
Non-repetitive peak forward
surge current *1, 2
(0.15)
0 to 0.1
Symbol
Reverse voltage
0.16+0.10
–0.06
0.2±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter
5˚
■ Features
(0.425)
6
1.25±0.1
2.1±0.1
For super high speed switching
For small current rectification
1: Anode 1
2: Anode 2
3: Anode 3
4: Cathode 3
5: Cathode 2
6: Cathode 1
EIAJ: SC-88
SMini6-F1 Package
Marking Symbol: M8A
Internal Connection
6
5
4
1
2
3
Note) *1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*2: Value of each diode in double diodes used.
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 100 mA
Reverse current
IR
VR = 30 V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
20
pF
Reverse recovery time *
trr
IF = IR = 100 mA
Irr = 0.1 • IR , RL = 100 Ω
2.0
ns
0.55
V
15
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 250 MHz
4. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: October 2003
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKH00133AED
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 • IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
M6J784
IF  V F
I R  VR
103
75°C 25°C
1
10−1
0.8
Ta = 125°C
102
75°C
10
25°C
0.1
0.2
0.3
0.4
0.5
10−1
0.6
0
Forward voltage VF (V)
5
10
15
20
25
30
IR  T a
Ct  VR
24
f = 1 MHz
Ta = 25°C
Reverse current IR (µA)
VR = 30 V
3V
1V
102
10
1
10−1
−40
16
12
8
4
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
Terminal capacitance Ct (pF)
20
103
200
IF = 100 mA
0.4
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00133AED
0
−40
10 mA
3 mA
0
40
80
120
160
Ambient temperature Ta (°C)
Reverse voltage VR (V)
104
0.6
0.2
1
0
Forward voltage VF (V)
−20°C
Ta = 125°C
10
1.0
103
Reverse current IR (µA)
Forward current IF (mA)
102
10−2
VF  T a
104
30
200
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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