2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) VGS VGSM ±20 ±40 Vdc Vpk ID IDM 200 500 PD 350 2.8 mW mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit RθJA 357 °C/W TL 300 °C Drain Current – Continuous – Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range 200 mAMPS 60 VOLTS RDS(on) = 5 Ω N–Channel D mAdc G S THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds TO–92 CASE 29 Style 22 12 3 MARKING DIAGRAM & PIN ASSIGNMENT 2N7000 YWW 1 Source 3 Drain 2 Gate Y WW = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 5 1 Publication Order Number: 2N7000/D 2N7000 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)DSS 60 – Vdc – – 1.0 1.0 µAdc mAdc IGSSF – –10 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 3.0 Vdc Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) rDS(on) – – 5.0 6.0 Drain–Source On–Voltage (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) VDS(on) – – 2.5 0.45 On–State Drain Current (VGS = 4.5 Vdc, VDS = 10 Vdc) Id(on) 75 – mAdc Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) gfs 100 – µmhos Ciss – 60 pF Coss – 25 Crss – 5.0 ton – 10 toff – 10 Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) IDSS Gate–Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) Ohm Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance ((VDS = 25 V,, VGS = 0,, f=1 1.0 0 MH MHz)) SWITCHING CHARACTERISTICS (Note 1.) Turn–On Delay Time Turn–Off Delay Time (VDD = 15 V, ID = 500 mA, RG = 25 , RL = 30 , Vgen = 10 V) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. http://onsemi.com 2 ns 2N7000 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 125°C 0.6 0.4 0.2 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (°C) 10 +100 +140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 Figure 3. Temperature versus Static Drain–Source On–Resistance -20 +20 +60 T, TEMPERATURE (°C) +100 Figure 4. Temperature versus Gate Threshold Voltage ORDERING INFORMATION Device 9.0 Figure 2. Transfer Characteristics VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25°C -55°C Package Shipping 2N7000 TO–92 1000 Unit/Box 2N7000RLRA TO–92 2000 Tape & Reel 2N7000RLRM TO–92 2000 Ammo Pack 2N7000RLRP TO–92 2000 Ammo Pack 2N7000ZL1 TO–92 2000 Ammo Pack http://onsemi.com 3 +140 2N7000 PACKAGE DIMENSIONS TO–92 CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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