LRC LMBTA94LT1G Pnp epitaxial planar transistor Datasheet

LESHAN RADIO COMPANY, LTD.
LMBTA94LT1G
LMBTA94LT1G
PNP EPITAXIAL PLANAR TRANSISTOR
3
We declare that the material of product
compliance with RoHS requirements.
1
2
Description
SOT– 23
The LMBTA94LT1G is designed for application
that requires high voltage.
COLLECTOR
3
Features
• High Breakdown Voltage: VCEO=400(Min.) at IC=1mA
• Complementary to LMBTA94LT1G
DEVICE MARKING
1
BASE
2
EMITTER
LMBTA94LT1G = 4Z
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 350 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -400 V
VCEO Collector to Emitter Voltage ................................................................................... -400 V
VEBO Emitter to Base Voltage ............................................................................................. -6 V
IC Collector Current ...................................................................................................... -150 mA
Characteristics (Ta=25
° C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
Cob
Min.
-400
-400
-6
50
75
60
20
-
Typ.
4
Max.
-100
-100
-500
-200
-300
-600
-900
200
6
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
pF
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-400V, IE=0
VEB=-6V, IC=0
VCE=-400V, VBE=0
IC=-1mA, IB=-0.1mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
VCE=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
1/3
LESHAN RADIO COMPANY, LTD.
LMBTA94LT1G
Characteristics Curve
Current Gain & Collector Current
Current Gain & Collector Current
1000
1000
hFE @ VCE=10V
o
75 C
o
125 C
o
75 C
100
o
o
hFE
125 C
hFE
25 C
10
100
o
25 C
hFE @ VCE=3V
1
10
1
10
100
1
1000
Collector Current-IC (mA)
10
100
1000
Collector Current-IC (mA)
Saturation Voltage & Collector Current
Saturation Voltage & Collector Current
1000
1000
VCE(sat) @ IC=10IB
o
25 C
75 C
Saturation Voltage (mV)
Saturation Voltage (mV)
o
o
125 C
100
o
25 C
10
o
125 C
o
75 C
VBE(s at) @ IC=10IB
100
1
10
100
Collector Current-IC (mA)
1000
1
10
100
1000
Collector Current-IC (mA)
Capacitance & Reverse-Biased Voltage
Capacitance (pF)
100
10
Cob
1
0.1
1
10
100
Reverse-Biased Voltage (V)
2/3
LESHAN RADIO COMPANY, LTD.
LMBTA94LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3
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