PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free VCES = 600V VCE(on) typ. = 1.59V G @VGE = 15V, IC = 17A E n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 600 31 17 120 120 ± 20 10 100 42 -55 to + 150 V A V mJ W 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) °C Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. 0.5 2.0 (0.07) 1.2 80 Units °C/W g (oz) 1 7/23/04 IRG4BC30FPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 18 Temperature Coeff. of Breakdown Voltage 0.69 1.59 Collector-to-Emitter Saturation Voltage 1.99 1.7 Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage -11 Forward Transconductance 6.1 10 Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Max. Units Conditions V VGE = 0V, IC = 250µA V VGE = 0V, IC = 1.0A V/°C VGE = 0V, IC = 1.0mA VGE = 15V 1.8 IC = 17A IC = 31A See Fig.2, 5 V IC = 17A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100V, IC = 17A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 n A VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets t d(on) tr t d(off) tf E ts LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 51 77 IC = 17A 7.9 12 nC VCC = 400V See Fig. 8 19 28 VGE = 15V 21 15 TJ = 25°C ns 200 300 IC = 17A, VCC = 480V 180 270 VGE = 15V, RG = 23Ω 0.23 Energy losses include "tail" 1.18 mJ See Fig. 10, 11, 13, 14 1.41 2.0 20 TJ = 150°C, 16 IC = 17A, VCC = 480V ns 290 VGE = 15V, RG = 23Ω 350 Energy losses include "tail" 2.5 mJ See Fig. 13, 14 7.5 nH Measured 5mm from package 1100 VGE = 0V 74 pF VCC = 30V See Fig. 7 14 = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC30FPbF 50 For both: 40 Load Current ( A ) Triangular wave: Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified I Clamp voltage: 80% of rated Power Dissipation = 21W 30 Square wave: 60% of rated voltage 20 I 10 Ideal diodes A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 1000 TJ = 25°C 100 TJ = 150°C 10 V GE = 15V 20µs PULSE WIDTH A 1 1 10 100 TJ = 150°C TJ = 25°C 10 V CC = 50V 5µs PULSE WIDTH A 1 5 6 7 8 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 13 3 IRG4BC30FPbF 2.5 VGE = 15V VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 40 30 20 10 0 VGE = 15V 80µs PULSE WIDTH I C = 34A 2.0 I C = 17A 1.5 I C = 8.5A A 1.0 25 50 75 100 125 150 -60 TC , Case Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.01 0.00001 t 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 1 t2 2 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30FPbF 2000 Cies 1200 800 Coes 400 Cres A 0 1 VCE = 400V I C = 17A SHORTED Cres = Cce Coes = Cce + Cgc 1600 C, Capacitance (pF) 20 VGE , Gate-to-Emitter Voltage (V) VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce 10 16 12 8 4 A 0 100 0 10 VCE, Collector-to-Emitter Voltage (V) 10 = 480V = 15V = 25°C = 17A 1.45 1.40 1.35 A 1.30 0 10 20 30 40 50 R G, Gate Resistance ( Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 50 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) VCC VGE TJ IC 30 Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 1.50 20 60 RG = 23 Ω VGE = 15V VCC = 480V I C = 34A I C = 17A 1 I C = 8.5A A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30FPbF RG TJ V CC V GE 5.0 1000 = 23 Ω = 150°C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 6.0 4.0 3.0 2.0 1.0 A 0.0 0 10 20 30 IC , Collector-to-Emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 40 VGE = 20V GE TJ = 125°C 100 SAFE OPERATING AREA 10 1 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC30FPbF L D.U.T. RL = VC * 50V 0 - 480V 1000V 480V 4 X IC@ 25°C 480µF 960V c d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13b - Pulsed Collector Fig. 13a - Clamped Inductive Current Test Circuit Load Test Circuit IC L Driver* D.U.T. Fig. 14a - Switching Loss Test Circuit VC 50V 1000V c d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4BC30FPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045) 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN HEXFET 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 0.55 (.022) 0.46 (.018) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E X AMPL E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 8 www.irf.com