Central CMSSH-3E CMSSH-3AE CMSSH-3CE CMSSH-3SE TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini™ SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3E Series types are Enhanced Versions of the CMSSH-3 Series of Silicon Schottky Diodes in an SOT-323 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: ♦ IF from 100 mA max to 200 mA max. ♦ ♦ SOT-323 CASE CMSSH-3E: CMSSH-3AE: CMSSH-3CE: CMSSH-3SE: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES BVR from 30V min to 40 V min. VF from 1.0 V max to 0.8 V max. MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: 31E 3AE 3CE 3SE MAXIMUM RATINGS: (TA=25°C) ♦Peak Repetitive Reverse Voltage ♦Continuous Forward Current SYMBOL VRRM 40 UNITS V IF IFRM 200 mA Peak Repetitive Forward Current 350 mA Forward Surge Current, tp=10ms IFSM 750 mA PD 250 mW TJ, Tstg -65 to +150 °C ΘJA 500 °C/W Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: SYMBOL ♦BVR VF ♦VF ♦VF ♦♦VF ♦ ♦♦ TEST CONDITIONS µA IR=100µ IF=2.0mA IF=15mA IF=100mA IF=200mA IR IR CT VR=25V VR=25V, TA=100°C VR=1.0V, f=1.0 MHz trr IF=IR=10mA, Irr=1.0mA, RL=100Ω (TA=25°C unless otherwise noted) MIN TYP 40 50 0.29 MAX UNITS 0.33 V V 0.37 0.42 V 0.61 0.80 V 0.65 1.0 V 90 500 nA 25 7.0 100 µA pF 5.0 ns Enhanced specification. Additional Enhanced specification. R1 (4-February 2004) Central CMSSH-3E CMSSH-3AE CMSSH-3CE CMSSH-3SE TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini™ SILICON SCHOTTKY DIODES SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATION 2 1 1 2 D1 3 CMSSH-3E 1) Anode 2) No Connection 3) Cathode MARKING CODE: 31E D2 3 CMSSH-3AE 1) Cathode D2 2) Cathode D1 3) Anode D1, D2 MARKING CODE: 3AE 1 2 D1 D2 3 CMSSH-3CE 1) Anode D2 2) Anode D1 3) Cathode D1, D2 MARKING CODE: 3CE 1 2 D1 D2 3 CMSSH-3SE 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: 3SE R1 (4-February 2004)