PHILIPS BAW56_03

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAW56
High-speed double diode
Product specification
Supersedes data of 1999 May 11
2003 Mar 25
Philips Semiconductors
Product specification
High-speed double diode
BAW56
FEATURES
DESCRIPTION
• Small plastic SMD package
The BAW56 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in a
small SOT23 plastic SMD package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
PINNING
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
common anode
• Repetitive peak forward current:
max. 450 mA.
handbook, 4 columns
APPLICATIONS
2
1
• High-speed switching in thick and
thin-film circuits.
2
MARKING
1
3
TYPE NUMBER
MARKING
CODE(1)
BAW56
A1*
3
Top view
MAM206
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
2003 Mar 25
Fig.1 Simplified outline (SOT23) and symbol.
2
Philips Semiconductors
Product specification
High-speed double diode
BAW56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward
current
−
85
V
−
75
V
single diode loaded; note 1;
see Fig.2
−
215
mA
double diode loaded; note 1;
see Fig.2
−
125
mA
−
450
mA
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
250
mW
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
IR
forward voltage
reverse current
see Fig.3
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 50 mA
1
V
IF = 150 mA
1.25
V
VR = 25 V
30
nA
VR = 75 V
1
µA
VR = 25 V; Tj = 150 °C
30
µA
VR = 75 V; Tj = 150 °C
50
µA
see Fig.5
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
pF
trr
reverse recovery time
when switched from IF = 10 mA to 4
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
V
2003 Mar 25
3
1.75
Philips Semiconductors
Product specification
High-speed double diode
BAW56
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
VALUE
UNIT
360
K/W
500
K/W
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
GRAPHICAL DATA
MBD033
300
MBG382
300
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
200
(2)
(3)
200
single diode loaded
double diode loaded
100
100
0
0
0
100
T amb ( oC)
200
Maximum permissible continuous forward
current as a function of ambient
temperature.
2003 Mar 25
1
VF (V)
2
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
Fig.3
4
Forward current as a function of forward
voltage.
Philips Semiconductors
Product specification
High-speed double diode
BAW56
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
102
10
103
104
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MGA884
105
IR
(nA)
10
MBH191
2.5
Cd
(pF)
handbook, halfpage
2.0
V R = 75 V
4
1.5
10
max
3
75 V
1.0
10
25 V
2
0.5
typ
typ
10
0
100
0
T j ( o C)
0
200
5
10
15
20
VR (V)
25
f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction
temperature.
2003 Mar 25
Fig.6
5
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed double diode
BAW56
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R = 50 Ω
S
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
2003 Mar 25
6
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed double diode
BAW56
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Mar 25
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
7
Philips Semiconductors
Product specification
High-speed double diode
BAW56
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Mar 25
8
Philips Semiconductors
Product specification
High-speed double diode
BAW56
NOTES
2003 Mar 25
9
Philips Semiconductors
Product specification
High-speed double diode
BAW56
NOTES
2003 Mar 25
10
Philips Semiconductors
Product specification
High-speed double diode
BAW56
NOTES
2003 Mar 25
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands
613514/04/pp12
Date of release: 2003
Mar 25
Document order number:
9397 750 10966