RMPA5251 4.90–5.85 GHz InGaP HBT Linear Power Amplifier General Description • 2.5% EVM at 18.0dBm modulated power out The RMPA5251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50Ω minimizes next level PCB space and allows for simplified integration. The on-chip detector provides power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. • 3.3V single positive supply operation • Adjustable bias current operation • Two power saving shutdown options (bias and logic control) • Integrated power detector with >18dB dynamic range • Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless package • Internally matched to 50Ω Device • Minimal external components Features • Optimized for use in IEEE 802.11a WLAN applications • 4.9 to 5.85 GHz Operation • 27dB small signal gain • 26dBm output power @ 1dB compression Electrical Characteristics1,3 802.11a OFDM Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency10 Supply Voltage Gain Total Current @ 18dBm POUT Total Current @ 19dBm POUT EVM @ 18dBm POUT2 EVM @ 19dBm POUT2 Detector Output @ 19dBm POUT Detector Threshold4 POUT Spectral Mask Compliance5, 6 Minimum 4.90 3.0 Typical 3.3 27 250 260 2.5 3.5 450 5.0 21.0 Maximum 5.35 3.6 Minimum 5.15 3.0 Typical Maximum 5.35 3.6 Minimum 5.15 3.0 Typical 3.3 28 240 250 2.5 3.5 500 5.0 20.0 Maximum 5.85 3.6 Unit GHz V dB mA mA % % mV dBm dBm Maximum 5.85 3.6 Unit GHz V dB mA Electrical Characteristics1 Single Tone Parameter Frequency10 Supply Voltage Gain7 Total Quiescent Current7, 11 Minimum 4.90 3.0 Typical 3.3 27 140–220 3.3 27.5 140–220 Notes: 1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50Ω system. 2. Percentage includes system noise floor of EVM=0.8%. 3. Not measured 100% in production. 4. POUT measured at PIN corresponding to power detection threshold. 5. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 6. PIN is adjusted to point where performance approaches spectral mask requirements. 7. 100% Production screened. 8. Bias Current is included in the total quiescent current. 9. VL is set to logic level for device off operation. 10. See Application information on Page 3. 11. See Data on Page 8. ©2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 October 2004 Parameter Bias Current at pin VM8 P1dB Compression7 Current @ P1dB Comp7 Standby Current9 Shutdown Current (VM=0V) Input Return Loss Output Return Loss Detector Output at P1dB Comp Detector POUT Threshold3, 4 Minimum Frequency 2nd Harmonic Output at P1dB 3rd Harmonic Output at P1dB Logic Shutdown Control Pin (VL): Device Off Device On Logic Current Turn-on Time13 Turn-off Time Spurious (Stability)14 Typical 16 26 425 1.9 <1.0 12 10 2 Maximum Minimum 5.35 5.15 7.0 4.90 0.0 2.4 10 <1 <1 -65 Maximum Unit mA dBm mA mA µA dB dB V 7.0 -30 -35 2.0 Typical 16 26 425 1.9 <1.0 16 10 2 dBm GHz dBc dBc 5.85 -30 -35 0.8 2.0 0.0 2.4 100 <1 <1 -65 0.8 V V µA µS µS dBc Absolute Ratings15 Symbol VC1, VC2 IC1–IC3 VM VL PIN TCASE TSTG Parameter Positive Supply Voltage Supply Current IC1 IC2 IC3 Voltage Mirror Logic Voltage RF Input Power Case Operating Temperature Storage Temperature Value 4.0 Units V 50 150 500 4 mA mA mA V 5 10 -40 to +85 -55 to +150 V dBm °C °C Notes: 3. Not measured 100% in production. 4. POUT measured at PIN corresponding to power detection threshold. 5. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 6. PIN is adjusted to point where performance approaches spectral mask requirements. 7. 100% Production screened. 8. Bias Current is included in the total quiescent current. 9. VL is set to logic level for device off operation. 10. See Application information on Page 3. 11. See Data on Page 8. 12. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50É∂ system 13. Measured from Device On signal turn on, (Logic High) to the point where RF POUT stabilizes to 0.5dB. 14. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. 15. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. ©2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 Electrical Characteristics12 Single Tone (Continued) N/C 1 P1 VM2 VC2 VC3 16 15 14 13 BIAS CONTROL 12 DT2 11 DT1 10 RF OUT 9 N/C VOLTAGE DETECTOR VM1 2 VC1 3 RF IN 4 OUTPUT MATCH INPUT MATCH 5 6 7 8 N/C N/C VM3 N/C Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Description N/C VM1 VC1 RF IN N/C N/C VM3 N/C N/C RF OUT DT1 (Vdet) DT2 VC3 VC2 VM2 P1 (Logic) Application Information The RMPA5251 can be optimized to work over 2 frequency ranges, 4.9 to 5.35 GHz (Low Band) and 5.15 to 5.85 GHz (High Band). Using the 2 external component configurations described on the next page, the RMPA5251 can be optimized to give the best EVM, power and gain over a specified bandwidth. The data on sheets 7–9 shows the performance when the evaluation board is configured for either low or high band performance. ©2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 Functional Block Diagram RMPA5251 Evaluation Board Schematic 5251 YWWX Backside Ground Note: *C3 only used in Low Band Configuration All Mirrors and VC connections can be separate or connected to a common rail. Evaluation Board Bill of Materials RMPA5251 4.90 to 5.35 GHz Operation Eval Board BOM (Low Band) No. Ref 1 C1,C2 Value Unit Qty Size Description 10 µF 2 0805 10µF Capacitor 2 3 C3 C4 1 100 pF pF 1 1 0603 1pF Capacitor 0402 100pF Capacitor 4 R1,R2 10K Ω 2 0402 10K Ω Resistor 5 6 7 L1,L2,L3 B1 J1,J2 10 nH 3 1 2 8 J3 9 A1 ©2004 Fairchild Semiconductor Corporation 0402 10nH Inductor Fixture Board Jack End Launch SMA 11 Right Angle Single Header 1 Packaged MMIC MFG Murata Part No. Comments GRM21BR60J106KE01D Decoupling Capacitor Murata GRM39C0G010B100V Murata GRM1885C1H101JA01D Detector Capacitor IMS RCI-0402-1002J Detector Resistor Toko LLV1005FB10NJ RF Choke Crown Circuits G657432 Johnson 142-0701-841 Components Digikey S1322-12-ND Fairchild RMPA5251 RMPA5251 Rev. D No. Ref Value Unit Qty Size Description 1 C1,C2 10 µF 2 0805 10 µF Capacitor 2 C4 100 pF 1 0402 3 4 5 6 7 R1,R2 L1,L3 L2 B1 J1,J2 10K 10 15 Ω nH nH 2 2 1 1 2 0402 0402 0402 8 J3 11 9 A1 1 MFG Murata Part No. GRM21BR60J106K Comments Decoupling Capacitor 100 pF Capacitor Murata GRM1885C1H101JA01D Detector Capacitor 10 KΩ Resistor IMS RCI-0402-1002J Detector Resistor 10 nH Inductor Toko LLV1005FB10NJ RF Choke 15 nH Inductor Toko LLV1005FB15NJ RF Choke Fixture Board Crown Circuits G657432 Jack End Launch Johnson 142-0701-841 SMA Components Right Angle Single Digikey S1322-12-ND Header Packaged MMIC Fairchild RMPA5251 Evaluation Board Layout VL C1 * L2 C3 L3 R1 J1 C2 L1 C4 J2 R2 A1 Not Used J3 = component Actual Board Size = 2.0" x 1.5" = Jumper/short connection * VL is labeled P1 on Eval Board Evaluation Board Operation Recommended turn-on sequence: 1) Connect RF ports J1, J2 to RF test equipment. 2) Connect common ground terminal to the Ground (GND) pin on the board. 3) Connect logic control pin VL to positive supply. 4) Connect terminals VC1, VC2 and VC3 together and connect to positive supply (VC). 5) Connect terminals VM1, VM2 and VM3 together and connect to positive supply (VM). 6) Connect voltmeter to Detector Output, pin DT1. 7) Connect pin DT2 to ground. 8) Apply high voltage of +2.4V to logic control pin VL. (On) 9) Apply positive voltage of 3.3V to VC1, VC2 and VC3 (first, second and third stage collector). 10) Apply positive voltage of 3.3V to VM1, VM2 and VM3 (bias networks)2. 11) At this point, you should expect to observe the following positive currents flowing into the pins: Pin VL VC (Total) VM (Total) ©2004 Fairchild Semiconductor Corporation Current ~150 µA ~184 mA ~16 mA RMPA5251 Rev. D RMPA5251 RMPA5251 5.15 to 5.85 GHz Operation Eval Board BOM (High Band) Shut down current flow into the pins: Pin Current VL <1 nA VC (total) <1 nA VM (total) <1.9 mA Recommended turn-off sequence: Use reverse order described in the turn-on sequence above. Note: 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design. 2. VM may be adjusted from +2.9 to +3.3V to adjust bias current operation. See Typical Characteristics. Package Outline Dimensions in inches [mm] 5251 YWWX Application Information Precautions to Avoid Permanent Device Damage: —Static Sensitivity: Follow ESD precautions to protect against ESD damage: • A properly grounded static-dissipative surface on which to place devices. • Static-dissipative floor or mat. • A properly grounded conductive wrist strap for each person to wear while handling devices. ©2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 12) Apply input RF power to SMA connector pin RF IN. Currents on collector pins will vary depending on the input drive level. 13) Vary positive voltage VL from +2.4V to +0.5V to shut down the amplifier or alter the power level. RMPA5251 Typical Characteristics (802.11a) RMPA5251 Comparison Low Band Vs. High Band Total Measured EVM Vs. Frequency Modulated Power Out =18 dBm 54 Mbps OFDM VC=VM=3.3V, ICQ=184mA, IMQ=16mA RMPA5251 Gain Vs. Modulated Power Out (Low and High Band) QAM64 54 Mbps OFDM Modulation VC=VM=3.3V, ICQ=184mA, IMQ=16mA, T=25 oC 5 32 30 Low Band Configuration 28 High Band Configuration 26 3 Gain (dB) Total Measured EVM (%) 4 Low Band Configuration 2 High Band Configuration 10 nH on VC2 Replaced with 15 nH and 1 pF on VC2 removed 24 22 20 Low Band High Band 18 1 16 Includes 0.8% System Level EVM 14 0 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 4.9 6 5 5.1 5.2 5.3 Frequency (GHz) 2 1.5 1 0.5 0 5.9 6 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 High Band Configuration RMPA5251 Output Power for 3% Total Measured EVM 802.11a 54 Mbps Modulation VM=VC=3.3 V, ICQ=184 mA, IMQ=16 mA (High Band Config) 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Total Channel Power (dBm) Total Channel Power (dBm) 5.8 Modulated Power Out (dBm) RMPA5251 Output Power for 3% Total Measured EVM 802.11a 54 Mbps Modulation VM=VC=3.3 V, ICQ=184 mA, IMQ=16 mA (Low Band Config) 18dBm Includes 0.8% System Level EVM 5.05 5.7 Includes 0.8% System Level EVM 4 Low Band Configuration 5 5.6 RMPA5251 Total Measured EVM QAM64 54 Mbps OFDM Modulation VC=VM=3.3V, ICQ=184m A, IMQ=16m A, F=5.15- 5.85GHz, T=25oC 8 7.5 5.15 GHz 7 5.25 GHz 6.5 6 5.35 GHz 5.5 5.45 GHz 5 5.55 GHz 4.5 4 5.65 GHz 3.5 5.75 GHz 3 5.85 GHz 2.5 Modulated Power Out (dBm) 4.95 5.5 High Band Configuration RMPA5251 Total Measured EVM QAM64 54 Mbps OFDM Modulation VC=VM=3.3V, ICQ=184m A, IMQ=16m A, F=5.15- 5.35GHz, T=25oC 8 7.5 4.90 GHz 7 4.95 GHz 6.5 5.00 GHz 6 5.05 GHz 5.5 5 5.10 GHz 4.5 5.15 GHz 4 5.20 GHz 3.5 5.25 GHz 3 2.5 5.30 GHz 2 5.35 GHz 1.5 1 0.5 Includes 0.8% System Level EVM 0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Total Measured EVM (%) Total Measured EVM (%) Low Band Configuration 4.9 5.4 Frequency (GHz) 5.1 5.15 5.2 5.25 5.3 5.35 Frequency (GHz) 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 18dBm Includes 0.8% System Level EVM 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Frequency (GHz) Low Band Configuration High Band Configuration RMPA5251 Spectral Plot Showing Compliance to 802.11a Spectral Mask Requirements @ 21.0 dBm Modulated Output Power 54Mbps OFDM Data, 16.7 MHz BW, 176µS Burst, 100µS Idle, Frequency = 5.25 GHz, VC = VM = 3.3V, ICQ = 184 mA, IMQ = 16 mA, T = 25°C RMPA5251 Spectral Plot Showing Compliance to 802.11a Spectral Mask Requirements @ 20.0 dBm Modulated Output Power 54Mbps OFDM Data, 16.7 MHz BW, 176µS Burst, 100µS Idle, Frequency = 5.5 GHz, VC = VM = 3.3V, ICQ = 184 mA, IMQ = 16 mA, T = 25°C ©2004 Fairchild Semiconductor Corporation RMPA5251 Rev. D RMPA5251 Typical Characteristics (802.11a) (continued) Low Band Configuration RMPA5251 Detector Voltage 4.9 - 5.35 GHz OFDM 54 Mbps Modulation VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, T = 25°C Low Band Configuration 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 4.90 GHz 4.95 GHz 5.00 GHz 5.05 GHz 5.10 GHz 5.15 GHz 5.20 GHz 5.25 GHz 5.30 GHz 5.35 GHz 4 5 6 7 Detector Voltage (mV) Detector Voltage (mV) High Band Configuration 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Total Channel Power 16.7 MHz (dBm) RMPA5251 Detector Voltage 5.15 - 5.85 GHz OFDM 54 Mbps Modulation VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, T = 25°C High Band Configuration 5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Total Channel Power 16.7 MHz (dBm) Low Band Configuration RMPA5251 Performance vs. Change in Mirror Voltage (VM)* 29 160 140 120 230 Gain 28 220 27 210 26 200 190 25 24 180 Total Current 23 170 22 160 21 150 140 20 100 3 5 VM: 7 9 11 13 15 17 19 Modulated Output Power (dBm) 2.9V 3.0V 3.1V 3.2V 21 19 2.9 23 Total Current (mA) 180 Gain and Total Quiescent Current vs. Mirror Voltage (VM) Frequency = 5.25 GHz, VC = 3.3V, T = 25°C, Low Band Configuration 240 30 Gain (dB) Total Current (mA) RMPA5251 Total Current vs. VM vs. Modulated Output Power VC = 3.3V, Frequency = 5.25 GHz, T = 25°C, Low Band Configuration 280 VM 3.3V 260 3.2V 3.1V 240 3.0V 220 2.9V 200 3.0 3.1 3.2 Mirror Voltage, VM (V) 3.3 130 3.3V *Total current can be varied by resetting the quiescent current by means of adjusting the mirror voltage, VM. Low Band Configuration RMPA5251 Modulated Output Power (OFDM 54 Mbps) at 2% and 3% EVM vs. Mirror Voltage vs. Frequency, VC=3.3V, T=25°C 20 RMPA5251 Output Power for 2% EVM Increase for VM = 2.9 to VM = 3.3V 802.11a 54 Mbps OFDM Modulation RMPA5251 Output Power for 3% EVM Increase for VM = 2.9 to VM = 3.3V 802.11a 54 Mbps OFDM Modulation 20 3.3V 3.2V 19 19 Modulated Output Power (dBm) Modulated Output Power (dBm) 3.1V 18 17 3.3V 3.2V 16 3.1V 15 3.0V 18 3.0V 2.9V 17 16 15 Includes 0.8% System Level EVM Includes 0.8% System Level EVM 2.9V 14 5.15 5.2 5.25 5.3 Frequency (GHz) VM = 2.9 V Itotal = 142 mA VM = 3.1 V Itotal = 170 mA VM = 3.3 V Itotal = 200 mA ©2004 Fairchild Semiconductor Corporation VM = 3.0 V Itotal = 155 mA VM = 3.2 V Itotal = 185 mA 5.35 14 5.15 5.2 5.25 5.3 5.35 Frequency (GHz) VM = 2.9 V Itotal = 142 mA VM = 3.1 V Itotal = 170 mA VM = 3.3 V Itotal = 200 mA VM = 3.0 V Itotal = 155 mA VM = 3.2 V Itotal = 185 mA RMPA5251 Rev. D Low Band Configuration High Band Configuration RMPA5251 S-Parameters vs. Frequency VM = VC = 3.3V, IMQ = 16mA, ICQ = 184mA, High Band Configuration 0 30 24 S21 -6 21 S22 -8 18 -10 15 -12 12 -14 9 -16 6 -18 3 S11 -20 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 Frequency (GHz) 5.7 5.8 5.9 0 6.0 Low Band Configuration 18 -10 15 -14 6 -18 3 -20 4.9 28 5.2 5.3 5.4 5.5 5.6 Frequency (GHz) 5.7 5.8 5.9 6.0 27 26 Gain (dB) Gain (dB) 5.1 RMPA5251 Typical Gain vs Single Tone Output Power VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 5.2 - 5.8 GHz High Band Configuration 27 4.90 GHz 4.95 GHz 5.00 GHz 5.05 GHz 5.10 GHz 5.15 GHz 5.25 GHz 5.35 GHz 25 24 23 22 21 26 5.2 GHz 5.3 GHz 5.4 GHz 5.5 GHz 5.6 GHz 5.7 GHz 5.8 GHz 25 24 23 22 21 20 20 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Power (dBm) 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Power (dBm) Low Band Configuration High Band Configuration RMPA5251 Typical Total Current vs. Single Tone Output Power VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 5.2 - 5.8 GHz High Band Configuration 550 RMPA5251 Typical Total Current vs. Single Tone Output Power VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 4.9 - 5.35 GHz Low Band Configuration 550 4.90 GHz 4.95 GHz 5.00 GHz 5.05 GHz 5.10 GHz 5.15 GHz 5.25 GHz 5.35 GHz 500 450 Total Current (mA) Total Current (mA) 0 5.0 High Band Configuration 29 250 200 400 350 300 5.2 GHz 5.3 GHz 5.4 GHz 5.5 GHz 5.6 GHz 5.7 GHz 5.8 GHz 250 200 150 150 100 9 S11 -16 28 300 12 -12 30 350 21 S22 -8 29 400 S21 -6 30 450 24 -4 RMPA5251 Typical Gain vs Single Tone Output Power VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 4.9 - 5.35 GHz Low Band Configuration 500 27 -2 S21 Mag (dB) 27 -4 S11 and S22 Mag (dB) -2 S21 Mag (dB) S11 and S22 Mag (dB) RMPA5251 S-Parameters vs. Frequency VM = VC = 3.3V, IMQ = 16mA, ICQ = 184mA, Low Band Configuration 30 0 100 6 7 8 9 10 1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Power (dBm) 6 7 8 9 10 1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Power (dBm) High Band Configuration RMPA5251 Performance vs. Change in Collector Voltage (VC) RMPA5251 Single Tone Gain vs. VC vs. Frequency VM = 3.3V T=25°C High Band Configuration RMPA5251 Single Tone P1dB vs. VC vs. Frequency VM = 3.3V T=25°C High Band Configuration 35 Gain (dB) 25 20 15 VC 10 5 3.0V 3.3V 3.6V 0 4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 5.95 6.05 Frequency (GHz) ©2004 Fairchild Semiconductor Corporation P1dB (dBm) 30 28 27 26 25 24 23 22 21 20 VC 19 3.0V 18 3.3V 17 3.6V 16 15 4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 5.95 6.05 Frequency (GHz) RMPA5251 Rev. D RMPA5251 Typical Characteristics (Single Tone) (continued) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13