Panasonic MA344 Silicon epitaxial planar type Datasheet

Variable Capacitance Diodes
MA6X344 (MA344)
Silicon epitaxial planar type
2
0.30+0.10
–0.05
0.50+0.10
–0.05
1.1+0.2
–0.1
10°
Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
34
V
Forward current (DC)
IF
20
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
Symbol
0.4±0.2
1
(0.65)
3
1.1+0.3
–0.1
• Three isolated elements contained in one package
• Large capacitance variation ratio
• Small series resistance rD
• Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
2.8+0.2
–0.3
6
5°
5
0.16+0.10
–0.06
1.50+0.25
–0.05
4
■ Features
Parameter
Unit : mm
2.90+0.20
–0.05
1.9±0.1
(0.95) (0.95)
For UHF and VHF electronic tuners
1: Cathode 1
2: Cathode 2
3: Cathode 3
4: Anode 3
5: Anode 2
6: Anode 1
Mini6-G1 Package
Marking Symbol: 5P
Internal Connection
6
1
5
2
4
3
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Diode capacitance
Symbol
IR
Conditions
Min
nA
VR = 3 V, f = 1 MHz
11.233
12.781
pF
VR = 25 V, f = 1 MHz
2.020
2.367
pF
CD(10V)
VR = 10 V, f = 1 MHz
4.358
5.422
pF
CD(17V)
VR = 17 V, f = 1 MHz
2.567
3.100
pF
6.15
CD(3V)/CD(25V)
4.60
CD(17V)/CD(25V)
0.37
Series
Unit
10
CD(3V)
Capacitance difference
resistance*2
Max
CD(25V)
Capacitance ratio
Diode capacitance deviation
Typ
VR = 30 V
∆C
CD(3V)(10V)(17V)(25V)
rD
CD = 9 pF, f = 470 MHz
0.55

pF
Note)*1
%
0.75
Ω
Note) 1. Rated input/output frequency: 470 MHz
2. 2. Each characteristic is a standard for each diode.
3. *1 : Diode capacitance deviation is controlled to 2% for the rank B and 3% or less for the rank G.
*2 : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Note) The part number in the parenthesis shows conventional part number.
306
Variable Capacitance Diodes
MA6X344
CD  VR
f = 1 MHz
Ta = 25°C
Forward current IF (mA)
50
Diode capacitance CD (pF)
CD  Ta
IF  V F
30
20
10
5
3
120
1.03
100
1.02
80
Ta = 60°C
− 40°C
25°C
60
CD(Ta)
CD(Ta = 25°C)
100
40
0
4
0
8 12 16 20 24 28 32 36 40
1.01
10 V
17 V
25 V
1.00
0.98
0
1
VR = 3 V
0.99
20
2
f = 1 MHz
0.2
Reverse voltage VR (V)
0.4
0.6
Forward voltage
0.8
1.0
0.97
1.2
0
VF (V)
20
40
60
80
100
Ambient temperature Ta (°C)
IR  T a
Reverse current IR (nA)
102
VR = 30 V
10
1
10−1
10−2
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
3.085
2.580
11.290
2.738
CD(17V) (pF)
2.356
Secondary rank classification
CD(25V) (pF)
2.253
Primary rank classification
2.091
2.030
CD rank classification
4.380
12.345
12.718
CD(10V) (pF)
CD(3V) (pF)
11.806
4.934
5.395
307
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2001 MAR
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