ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC(cont) = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50mV PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features • High Gain • Low saturation voltage • High peak current • 7V reverse blocking voltage E Applications E • High side driver • Motor drive • Load disconnect switch C C B Ordering information Device ZXTP19060CGTA Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 Pinout - top view Device marking ZXTP19060C Issue 1- February 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXTP19060CG Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage VCBO -60 V Collector-Emitter voltage VCEO -60 V Emitter-Collector voltage (reverse blocking) VECX -7 V Emitter-Base voltage VEBO -7 V Continuous Collector current(c) IC -5 A Base current IB -1 A Peak pulse current ICM -7 A Power dissipation at TA =25°C(a) PD 1.2 W 9.6 mW/°C 1.6 W 12.8 mW/°C Linear derating factor PD Power dissipation at TA =25°C(b) Linear derating factor 3.0 W 24 mW/°C 5.3 W 42 mW/°C 10.2 W 81 mW/°C Tj, Tstg -55 to 150 °C PD Power dissipation at TA =25°C(c) Linear derating factor PD Power dissipation at TA =25°C(d) Linear derating factor PD Power dissipation at TC =25°C(e) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit ambient(a) RUJA 104 °C/W Junction to ambient(b) RUJA 78 °C/W Junction to ambient(c) RUJA 42 °C/W Junction to ambient(d) RUJA 23.5 °C/W Junction to case(e) RUJC 12.3 °C/W Junction to NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical Issue 1- February 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXTP19060CG Thermal characteristics V CE(sat) Limit 1 DC 1s 100ms 100m 10ms 1ms 100µs Single Pulse. T C -I Max Power Dissipation (W) Collector Current (A) 10 =25°C amb See note (c) 10m 100m 1 -V CE 10 Collector-Emitter Voltage (V) 3.0 See note (c) 2.5 2.0 See note (b) 1.5 1.0 See note (a) 0.5 0.0 0 20 Max Power Dissipation (W) Thermal Resistance (°C/W) 30 D=0.5 20 Single Pulse 10 D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) © Zetex Semiconductors plc 2008 100 120 140 160 Single Pulse. T 100 =25°C amb See note (c) 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Issue 1- February 2008 80 Derating Curve See note (c) D=0.2 60 Temperature (°C) Safe Operating Area 40 40 Pulse Power Dissipation 3 www.zetex.com ZXTP19060CG Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current Symbol BVCBO Min. -60 Typ. -110 Max. Unit V Conditions IC = -100µA BVCEO -260 -90 V IC= -10mA (*) BVECX -7 -8.4 V IE = -100µA, RBC < 1kΩ or 0.25V > VBC > -0.25V BVECO -7 -8.8 V IE = -100µA BVEBO -7 -8.4 V IE = -100µA ICBO <1 -50 -0.5 nA µA VCB = -60V VCB = -60V, Tamb=100°C Emitter cut-off current IEBO <1 -50 nA VEB = -5.6V Collector-Emitter saturation voltage VCE(sat) -62 -145 -500 -105 -145 -300 -80 -205 -750 -165 -200 -500 mV mV mV mV mV mV IC = -1A, IB = -100mA(*) IC = -1A, IB = -20mA(*) IC = -2A, IB = -40mA(*) IC = -2A, IB = -200mA(*) IC = -3A, IB = -300mA(*) IC = -5A, IB = -500mA(*) Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio VBE(sat) -975 -1050 mV IC = -5A, IB = -500mA(*) VBE(on) -890 -1000 mV IC = -5A, VCE = -2V(*) 330 260 40 500 Transition frequency fT 180 Input capacitance Cibo 280 Output capacitance Cobo 29.5 Delay time td 24.3 ns Rise time tr 13.2 ns Storage time ts 456 ns Fall time tf 68.2 ns hFE 200 160 20 IC = -100mA, VCE = -2V(*) IC = -1A, VCE = -2V(*) IC = -5A, VCE = -2V(*) MHz IC = -50mA, VCE = -10V f = 50MHz 400 pF VEB = -0.5V, f = 1MHz(*) 40 pF VCB = -10V, f = 1MHz(*) IC = -500mA, VCC = -10V, IB1 = -IB2 = -50mA NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. Issue 1- February 2008 © Zetex Semiconductors plc 2008 4 www.zetex.com ZXTP19060CG Typical characteristics 0.3 1 Tamb=25°C I /I =10 C B I /I =100 B I /I =50 CE(SAT) - V CE(SAT) B - V C 100m 0.2 (V) (V) C I /I =20 C B 150°C 100°C 0.1 25°C I /I =10 C 10m B -55°C 0.0 1m 10m - I 100m 1 10 10m 100m Collector Current (A) C V CE(SAT) - I 1 V v I CE(SAT) C 10 Collector Current (A) C v I C 1.2 100°C 600 500 1.2 400 1.0 25°C 300 0.8 0.6 -55°C 200 0.4 I /I =10 C 0.0 10m - I 100m 1 0.8 0.6 150°C 0.4 10 1m h FE 10m - I Collector Current (A) C 100°C 0.2 0 1m 25°C -55°C 100 0.2 B 1.0 (V) =2V CE BE(SAT) V - V 1.4 150°C Typical Gain (hFE ) Normalised Gain 1.6 C v I 100m V C 1 10 Collector Current (A) BE(SAT) v I C 400 1.0 V =2V 350 CE f = 1MHz Cibo Capacitance (pF) 25°C - V BE(ON) (V) -55°C 0.8 0.6 150°C 0.4 100°C 250 200 150 100 Cobo 50 0 0.2 1m 300 10m - I 100m 1 10m 10 C V BE(ON) Issue 1- February 2008 © Zetex Semiconductors plc 2008 100m 1 10 - Voltage(V) Collector Current (A) Capacitance v Voltage v I C 5 www.zetex.com ZXTP19060CG Package outline - SOT223 Dim. Millimeters Inches Dim. Millimeters Inches Min. Max. Min. Max. Min. Max. Min. Max. A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264 A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1- February 2008 © Zetex Semiconductors plc 2008 6 www.zetex.com ZXTP19060CG Intentionally left blank Issue 1- February 2008 © Zetex Semiconductors plc 2008 7 www.zetex.com ZXTP19060CG Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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