DIODES ZXTP19060CGTA

ZXTP19060CG
60V PNP medium transistor in SOT223
Summary
BVCEO > -60V
BVECO > -7V
IC(cont) = 5A
VCE(sat) < -80mV @ -1A
RCE(sat) = 50mV
PD = 3.0W
Complementary part number ZXTN19060CG
Description
C
Packaged in the SOT223 outline this new low saturation PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
B
Features
•
High Gain
•
Low saturation voltage
•
High peak current
•
7V reverse blocking voltage
E
Applications
E
•
High side driver
•
Motor drive
•
Load disconnect switch
C
C
B
Ordering information
Device
ZXTP19060CGTA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
1000
Pinout - top view
Device marking
ZXTP19060C
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ZXTP19060CG
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-Base voltage
VCBO
-60
V
Collector-Emitter voltage
VCEO
-60
V
Emitter-Collector voltage (reverse blocking)
VECX
-7
V
Emitter-Base voltage
VEBO
-7
V
Continuous Collector current(c)
IC
-5
A
Base current
IB
-1
A
Peak pulse current
ICM
-7
A
Power dissipation at TA =25°C(a)
PD
1.2
W
9.6
mW/°C
1.6
W
12.8
mW/°C
Linear derating factor
PD
Power dissipation at TA =25°C(b)
Linear derating factor
3.0
W
24
mW/°C
5.3
W
42
mW/°C
10.2
W
81
mW/°C
Tj, Tstg
-55 to 150
°C
PD
Power dissipation at TA =25°C(c)
Linear derating factor
PD
Power dissipation at TA =25°C(d)
Linear derating factor
PD
Power dissipation at TC =25°C(e)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Limit
Unit
ambient(a)
RUJA
104
°C/W
Junction to ambient(b)
RUJA
78
°C/W
Junction to ambient(c)
RUJA
42
°C/W
Junction to ambient(d)
RUJA
23.5
°C/W
Junction to case(e)
RUJC
12.3
°C/W
Junction to
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical
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ZXTP19060CG
Thermal characteristics
V
CE(sat)
Limit
1
DC
1s
100ms
100m
10ms
1ms
100µs
Single Pulse. T
C
-I
Max Power Dissipation (W)
Collector Current (A)
10
=25°C
amb
See note (c)
10m
100m
1
-V
CE
10
Collector-Emitter Voltage (V)
3.0
See note (c)
2.5
2.0
See note (b)
1.5
1.0
See note (a)
0.5
0.0
0
20
Max Power Dissipation (W)
Thermal Resistance (°C/W)
30
D=0.5
20
Single Pulse
10
D=0.05
D=0.1
0
100µ
1m
10m
100m
1
10
100
1k
Pulse Width (s)
© Zetex Semiconductors plc 2008
100
120
140
160
Single Pulse. T
100
=25°C
amb
See note (c)
10
1
100µ
1m
10m
100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Issue 1- February 2008
80
Derating Curve
See note (c)
D=0.2
60
Temperature (°C)
Safe Operating Area
40
40
Pulse Power Dissipation
3
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ZXTP19060CG
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Symbol
BVCBO
Min.
-60
Typ.
-110
Max.
Unit
V
Conditions
IC = -100µA
BVCEO
-260
-90
V
IC= -10mA (*)
BVECX
-7
-8.4
V
IE = -100µA, RBC < 1kΩ or
0.25V > VBC > -0.25V
BVECO
-7
-8.8
V
IE = -100µA
BVEBO
-7
-8.4
V
IE = -100µA
ICBO
<1
-50
-0.5
nA
µA
VCB = -60V
VCB = -60V, Tamb=100°C
Emitter cut-off current
IEBO
<1
-50
nA
VEB = -5.6V
Collector-Emitter
saturation voltage
VCE(sat)
-62
-145
-500
-105
-145
-300
-80
-205
-750
-165
-200
-500
mV
mV
mV
mV
mV
mV
IC = -1A, IB = -100mA(*)
IC = -1A, IB = -20mA(*)
IC = -2A, IB = -40mA(*)
IC = -2A, IB = -200mA(*)
IC = -3A, IB = -300mA(*)
IC = -5A, IB = -500mA(*)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
-975
-1050
mV
IC = -5A, IB = -500mA(*)
VBE(on)
-890
-1000
mV
IC = -5A, VCE = -2V(*)
330
260
40
500
Transition frequency
fT
180
Input capacitance
Cibo
280
Output capacitance
Cobo
29.5
Delay time
td
24.3
ns
Rise time
tr
13.2
ns
Storage time
ts
456
ns
Fall time
tf
68.2
ns
hFE
200
160
20
IC = -100mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
IC = -5A, VCE = -2V(*)
MHz
IC = -50mA, VCE = -10V
f = 50MHz
400
pF
VEB = -0.5V, f = 1MHz(*)
40
pF
VCB = -10V, f = 1MHz(*)
IC = -500mA, VCC = -10V,
IB1 = -IB2 = -50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
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ZXTP19060CG
Typical characteristics
0.3
1
Tamb=25°C
I /I =10
C
B
I /I =100
B
I /I =50
CE(SAT)
- V
CE(SAT)
B
- V
C
100m
0.2
(V)
(V)
C
I /I =20
C
B
150°C
100°C
0.1
25°C
I /I =10
C
10m
B
-55°C
0.0
1m
10m
- I
100m
1
10
10m
100m
Collector Current (A)
C
V
CE(SAT)
- I
1
V
v I
CE(SAT)
C
10
Collector Current (A)
C
v I
C
1.2
100°C
600
500
1.2
400
1.0
25°C
300
0.8
0.6
-55°C
200
0.4
I /I =10
C
0.0
10m
- I
100m
1
0.8
0.6
150°C
0.4
10
1m
h
FE
10m
- I
Collector Current (A)
C
100°C
0.2
0
1m
25°C
-55°C
100
0.2
B
1.0
(V)
=2V
CE
BE(SAT)
V
- V
1.4
150°C
Typical Gain (hFE )
Normalised Gain
1.6
C
v I
100m
V
C
1
10
Collector Current (A)
BE(SAT)
v I
C
400
1.0
V
=2V
350
CE
f = 1MHz
Cibo
Capacitance (pF)
25°C
- V
BE(ON)
(V)
-55°C
0.8
0.6
150°C
0.4
100°C
250
200
150
100
Cobo
50
0
0.2
1m
300
10m
- I
100m
1
10m
10
C
V
BE(ON)
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100m
1
10
- Voltage(V)
Collector Current (A)
Capacitance v Voltage
v I
C
5
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ZXTP19060CG
Package outline - SOT223
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
A
-
1.80
-
0.071
D
6.30
6.70
0.248
0.264
A1
0.02
0.10
0.0008
0.004
e
2.30 BSC
0.0905 BSC
A2
1.55
1.65
0.0610
0.0649
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP19060CG
Intentionally left blank
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ZXTP19060CG
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