Diodes MMBT3904T Npn small signal surface mount transistor Datasheet

SPICE MODEL: MMBT3904T
Pb
MMBT3904T
Lead-free
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
SOT-523
Epitaxial Planar Die Construction
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
¾
¾
0.50
G
G
0.90
1.10
1.00
H
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
a
0°
8°
¾
A
Complementary PNP Type Available (MMBT3906T)
Ultra-Small Surface Mount Package
C
Lead Free/RoHS Compliant (Note 2)
B C
TOP VIEW
Mechanical Data
·
·
·
·
·
·
·
·
·
E
B
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
M
N
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
J
L
D
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
C
Terminal Connections: See Diagram
Marking (See Page 2): 1N
All Dimensions in mm
Ordering & Date Code Information, See Page 2
B
Weight: 0.002 grams (approximate)
Maximum Ratings
E
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
IC
200
mA
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Notes:
Pd
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
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Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
60
¾
V
IC = 10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10mA, IC = 0
ICEX
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
IBL
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
hFE
40
70
100
60
30
¾
¾
300
¾
¾
¾
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.20
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
0.65
¾
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Output Capacitance
Cobo
¾
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
kW
Voltage Feedback Ratio
hre
0.5
8.0
x 10-4
Small Signal Current Gain
hfe
100
400
¾
Output Admittance
hoe
1.0
40
mS
Current Gain-Bandwidth Product
fT
300
¾
MHz
Noise Figure
NF
¾
5.0
dB
Delay Time
td
¾
35
ns
Rise Time
tr
¾
35
ns
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
Storage Time
ts
¾
200
ns
VCC = 3.0V, IC = 10mA
Fall Time
tf
¾
50
ns
IB1 = IB2 = 1.0mA
OFF CHARACTERISTICS (Note 3)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
IC = 100µA, VCE =
IC = 1.0mA, VCE =
IC = 10mA, VCE =
IC = 50mA, VCE =
IC = 100mA, VCE =
1.0V
1.0V
1.0V
1.0V
1.0V
SMALL SIGNAL CHARACTERISTICS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
VCE = 5.0Vdc, IC = 100mAdc,
RS = 1.0KW, f = 1.0MHz
SWITCHING CHARACTERISTICS
Ordering Information (Note 4)
Notes:
Device
Packaging
Shipping
MMBT3904T-7-F
SOT-523
3000/Tape & Reel
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
1N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
1NYM
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
N
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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MMBT3904T
250
15
f = 1MHz
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
Pd, POWER DISSIPATION (mW)
(see Note 1)
200
150
100
50
10
5
Cibo
Cobo
0
0.1
0
0
100
200
10
100
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
1000
1
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
hFE, DC CURRENT GAIN
1
TA = 125°C
100
TA = +25°C
TA = -25°C
10
IC
IB = 10
0.1
VCE = 1.0V
0.01
1
1
0.1
10
100
1000
0.1
1
10
1000
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
10
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
IC
IB = 10
1
TA = -25°C
TA = 125°C
TA = 25°C
0.1
0.1
1
TA = 75°C
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
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IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
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MMBT3904T
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