PHILIPS 74AUP1G08

74AUP1G08
Low-power 2-input AND gate
Rev. 02 — 29 June 2006
Product data sheet
1. General description
The 74AUP1G08 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G08 provides the single 2-input AND function.
2. Features
■ Wide supply voltage range from 0.8 V to 3.6 V
■ High noise immunity
■ Complies with JEDEC standards:
◆ JESD8-12 (0.8 V to 1.3 V)
◆ JESD8-11 (0.9 V to 1.65 V)
◆ JESD8-7 (1.2 V to 1.95 V)
◆ JESD8-5 (1.8 V to 2.7 V)
◆ JESD8-B (2.7 V to 3.6 V)
■ ESD protection:
◆ HBM JESD22-A114-C Class 3A. Exceeds 5000 V
◆ MM JESD22-A115-A exceeds 200 V
◆ CDM JESD22-C101-C exceeds 1000 V
■ Low static power consumption; ICC = 0.9 µA (maximum)
■ Latch-up performance exceeds 100 mA per JESD 78 Class II
■ Inputs accept voltages up to 3.6 V
■ Low noise overshoot and undershoot < 10 % of VCC
■ IOFF circuitry provides partial Power-down mode operation
■ Multiple package options
■ Specified from −40 °C to +85 °C and −40 °C to +125 °C
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
74AUP1G08GW
−40 °C to +125 °C
TSSOP5
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SOT353-1
74AUP1G08GM
−40 °C to +125 °C
XSON6
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1 × 1.45 × 0.5 mm
74AUP1G08GF
−40 °C to +125 °C
XSON6
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1 × 1 × 0.5 mm
4. Marking
Table 2.
Marking
Type number
Marking code
74AUP1G08GW
pE
74AUP1G08GM
pE
74AUP1G08GF
pE
5. Functional diagram
A
1
B
2
A
1
Y
4
&
4
Y
2
B
mna113
Fig 1. Logic symbol
Fig 2. IEC logic symbol
74AUP1G08_2
Product data sheet
mna221
mna114
Fig 3. Logic diagram
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
2 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
6. Pinning information
6.1 Pinning
74AUP1G08
74AUP1G08
B
1
A
2
GND
3
5
VCC
B
1
6
VCC
A
2
5
n.c.
GND
4
Y
3
4
74AUP1G08
Y
001aaf026
Fig 4. Pin configuration SOT353-1
(TSSOP5)
Fig 5. Pin configuration SOT886
(XSON6)
1
6
VCC
A
2
5
n.c.
GND
3
4
Y
001aaf027
Transparent top view
Transparent top view
001aaf025
B
Fig 6. Pin configuration SOT891
(XSON6)
6.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
TSSOP5
XSON6
B
1
1
data input B
A
2
2
data input A
GND
3
3
ground (0 V)
Y
4
4
data output Y
n.c.
-
5
not connected
VCC
5
6
supply voltage
7. Functional description
Table 4.
Function table[1]
Input
Output
A
B
Y
L
L
L
L
H
L
H
L
L
H
H
H
[1]
H = HIGH voltage level;
L = LOW voltage level.
74AUP1G08_2
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
3 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC
supply voltage
IIK
input clamping current
VI
input voltage
IOK
output clamping current
Conditions
VI < 0 V
[1]
VO > VCC or VO < 0 V
[1]
Min
Max
Unit
−0.5
+4.6
V
-
−50
mA
−0.5
+4.6
V
-
±50
mA
−0.5
+4.6
V
VO
output voltage
Active mode and Power-down mode
IO
output current
VO = 0 V to VCC
-
±20
mA
ICC
supply current
-
+50
mA
IGND
ground current
-
−50
mA
Tstg
storage temperature
−65
+150
°C
-
250
mW
total power dissipation
Ptot
Tamb = −40 °C to +125 °C
[2]
[1]
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Symbol
Parameter
VCC
supply voltage
VI
input voltage
VO
output voltage
Tamb
ambient temperature
∆t/∆V
input transition rise and fall rate
Conditions
Max
Unit
0.8
3.6
V
0
3.6
V
Active mode
0
VCC
V
Power-down mode; VCC = 0 V
0
3.6
V
−40
+125
°C
0
200
ns/V
VCC = 0.8 V to 3.6 V
74AUP1G08_2
Product data sheet
Min
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
4 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 °C
VIH
VIL
VOH
VOL
HIGH-state input voltage
LOW-state input voltage
HIGH-state output voltage
LOW-state output voltage
VCC = 0.8 V
0.70 × VCC -
-
V
VCC = 0.9 V to 1.95 V
0.65 × VCC -
-
V
VCC = 2.3 V to 2.7 V
1.6
-
-
V
VCC = 3.0 V to 3.6 V
2.0
-
-
V
VCC = 0.8 V
-
-
0.30 × VCC V
VCC = 0.9 V to 1.95 V
-
-
0.35 × VCC V
VCC = 2.3 V to 2.7 V
-
-
0.7
V
VCC = 3.0 V to 3.6 V
-
-
0.9
V
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.1
-
-
V
IO = −1.1 mA; VCC = 1.1 V
0.75 × VCC -
-
V
IO = −1.7 mA; VCC = 1.4 V
1.11
-
V
VI = VIH or VIL
-
IO = −1.9 mA; VCC = 1.65 V
1.32
-
-
V
IO = −2.3 mA; VCC = 2.3 V
2.05
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.9
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.72
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.6
-
-
V
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.1
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.3 × VCC
V
VI = VIH or VIL
IO = 1.7 mA; VCC = 1.4 V
-
-
0.31
V
IO = 1.9 mA; VCC = 1.65 V
-
-
0.31
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.31
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.44
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.31
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.44
V
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.1
µA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.2
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.2
µA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
0.5
µA
∆ICC
additional supply current
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
-
-
40
µA
CI
input capacitance
VCC = 0 V to 3.6 V; VI = GND or VCC
-
0.8
-
pF
CO
output capacitance
VO = GND; VCC = 0 V
-
1.7
-
pF
74AUP1G08_2
Product data sheet
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
5 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
VCC = 0.8 V
Typ
Max
Unit
0.70 × VCC -
-
V
VCC = 0.9 V to 1.95 V
0.65 × VCC -
-
V
VCC = 2.3 V to 2.7 V
1.6
-
-
V
VCC = 3.0 V to 3.6 V
2.0
-
-
V
VCC = 0.8 V
-
-
0.30 × VCC V
VCC = 0.9 V to 1.95 V
-
-
0.35 × VCC V
VCC = 2.3 V to 2.7 V
-
-
0.7
V
VCC = 3.0 V to 3.6 V
-
-
0.9
V
Tamb = −40 °C to +85 °C
VIH
VIL
VOH
VOL
HIGH-state input voltage
LOW-state input voltage
HIGH-state output voltage
LOW-state output voltage
VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.1
-
-
V
IO = −1.1 mA; VCC = 1.1 V
0.7 × VCC
-
-
V
IO = −1.7 mA; VCC = 1.4 V
1.03
-
-
V
IO = −1.9 mA; VCC = 1.65 V
1.30
-
-
V
IO = −2.3 mA; VCC = 2.3 V
1.97
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.85
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.67
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.55
-
-
V
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.1
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.3 × VCC
V
IO = 1.7 mA; VCC = 1.4 V
-
-
0.37
V
VI = VIH or VIL
IO = 1.9 mA; VCC = 1.65 V
-
-
0.35
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.33
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.45
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.33
V
-
-
0.45
V
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
IO = 4.0 mA; VCC = 3.0 V
-
-
±0.5
µA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.5
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.6
µA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
0.9
µA
∆ICC
additional supply current
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
-
-
50
µA
74AUP1G08_2
Product data sheet
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
6 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
VCC = 0.8 V
Typ
Max
Unit
0.75 × VCC -
-
V
VCC = 0.9 V to 1.95 V
0.70 × VCC -
-
V
VCC = 2.3 V to 2.7 V
1.6
-
-
V
VCC = 3.0 V to 3.6 V
2.0
-
-
V
VCC = 0.8 V
-
-
0.25 × VCC V
VCC = 0.9 V to 1.95 V
-
-
0.30 × VCC V
VCC = 2.3 V to 2.7 V
-
-
0.7
V
VCC = 3.0 V to 3.6 V
-
-
0.9
V
Tamb = −40 °C to +125 °C
HIGH-state input voltage
VIH
LOW-state input voltage
VIL
VOH
HIGH-state output voltage
LOW-state output voltage
VOL
VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.11 -
-
V
IO = −1.1 mA; VCC = 1.1 V
0.6 × VCC
-
-
V
IO = −1.7 mA; VCC = 1.4 V
0.93
-
-
V
IO = −1.9 mA; VCC = 1.65 V
1.17
-
-
V
IO = −2.3 mA; VCC = 2.3 V
1.77
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.67
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.40
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.30
-
-
V
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.11
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.33 × VCC V
IO = 1.7 mA; VCC = 1.4 V
-
-
0.41
VI = VIH or VIL
V
IO = 1.9 mA; VCC = 1.65 V
-
-
0.39
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.36
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.50
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.36
V
-
-
0.50
V
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
IO = 4.0 mA; VCC = 3.0 V
-
-
±0.75
µA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.75
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.75
µA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
1.4
µA
∆ICC
additional supply current
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
-
-
75
µA
[1]
[1]
One input at VCC − 0.6 V, other input at VCC or GND.
74AUP1G08_2
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
7 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8
Symbol
Parameter
Conditions
Min
Typ [1]
Max
Unit
-
17.0
-
ns
2.6
5.1
10.8
ns
1.6
3.7
6.5
ns
Tamb = 25 °C; CL = 5 pF
tPHL, tPLH
see Figure 7
HIGH-to-LOW and
LOW-to-HIGH
VCC = 0.8 V
propagation delay A or B to Y
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
1.3
3.0
5.2
ns
VCC = 2.3 V to 2.7 V
1.1
2.4
4.0
ns
VCC = 3.0 V to 3.6 V
1.0
2.2
3.5
ns
-
20.6
-
ns
2.4
6.0
12.5
ns
2.0
4.3
7.6
ns
Tamb = 25 °C; CL = 10 pF
tPHL, tPLH
HIGH-to-LOW and
see Figure 7
LOW-to-HIGH
VCC = 0.8 V
propagation delay A or B to Y
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
1.7
3.6
6.1
ns
VCC = 2.3 V to 2.7 V
1.4
2.9
4.8
ns
VCC = 3.0 V to 3.6 V
1.3
2.7
4.2
ns
-
24.1
-
ns
3.4
6.8
14.2
ns
2.3
4.9
8.6
ns
Tamb = 25 °C; CL = 15 pF
tPHL, tPLH
HIGH-to-LOW and
see Figure 7
LOW-to-HIGH
VCC = 0.8 V
propagation delay A or B to Y
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
1.9
4.0
6.9
ns
VCC = 2.3 V to 2.7 V
1.7
3.4
5.5
ns
VCC = 3.0 V to 3.6 V
1.5
3.1
4.8
ns
-
34.4
-
ns
4.6
9.1
19.4
ns
3.4
6.4
11.5
ns
Tamb = 25 °C; CL = 30 pF
tPHL, tPLH
HIGH-to-LOW and
see Figure 7
LOW-to-HIGH
VCC = 0.8 V
propagation delay A or B to Y
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
2.6
5.3
9.1
ns
VCC = 2.3 V to 2.7 V
2.3
4.5
7.2
ns
VCC = 3.0 V to 3.6 V
2.2
4.2
6.2
ns
74AUP1G08_2
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
8 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8
Symbol
Parameter
Min
Typ [1]
Max
Unit
VCC = 0.8 V
-
2.5
-
pF
VCC = 1.1 V to 1.3 V
-
2.7
-
pF
VCC = 1.4 V to 1.6 V
-
2.8
-
pF
VCC = 1.65 V to 1.95 V
-
2.9
-
pF
VCC = 2.3 V to 2.7 V
-
3.5
-
pF
VCC = 3.0 V to 3.6 V
-
4.0
-
pF
Conditions
Tamb = 25 °C
power dissipation capacitance f = 1 MHz; VI = GND to VCC
CPD
[1]
All typical values are measured at nominal VCC.
[2]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
[2]
Table 9.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8
Symbol
Parameter
−40 °C to +85 °C
Conditions
−40 °C to +125 °C
Min
Max
Min
Max
Unit
CL = 5 pF
tPHL, tPLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A or B to Y
see Figure 7
VCC = 1.1 V to 1.3 V
2.1
11.7
2.1
12.9
ns
VCC = 1.4 V to 1.6 V
1.5
7.5
1.5
8.3
ns
VCC = 1.65 V to 1.95 V
1.3
6.1
1.3
6.7
ns
VCC = 2.3 V to 2.7 V
1.0
4.8
1.0
5.3
ns
VCC = 3.0 V to 3.6 V
0.9
4.3
0.9
4.8
ns
VCC = 1.1 V to 1.3 V
2.2
13.6
2.2
15.0
ns
VCC = 1.4 V to 1.6 V
1.8
8.9
1.8
9.8
ns
VCC = 1.65 V to 1.95 V
1.6
7.2
1.6
7.9
ns
VCC = 2.3 V to 2.7 V
1.3
5.7
1.3
6.3
ns
VCC = 3.0 V to 3.6 V
1.2
4.7
1.2
5.2
ns
CL = 10 pF
tPHL, tPLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A or B to Y
see Figure 7
74AUP1G08_2
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
9 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
Table 9.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8
Symbol
Parameter
−40 °C to +85 °C
Conditions
−40 °C to +125 °C
Unit
Min
Max
Min
Max
VCC = 1.1 V to 1.3 V
3.1
15.7
3.1
17.3
ns
VCC = 1.4 V to 1.6 V
2.1
10.1
2.1
11.2
ns
VCC = 1.65 V to 1.95 V
1.8
8.2
1.8
9.0
ns
VCC = 2.3 V to 2.7 V
1.6
6.5
1.6
7.2
ns
VCC = 3.0 V to 3.6 V
1.5
5.9
1.5
6.5
ns
CL = 15 pF
tPHL, tPLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A or B to Y
see Figure 7
CL = 30 pF
tPHL, tPLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A or B to Y
see Figure 7
VCC = 1.1 V to 1.3 V
4.1
21.8
4.1
24.0
ns
VCC = 1.4 V to 1.6 V
2.9
13.6
2.9
15.0
ns
VCC = 1.65 V to 1.95 V
2.4
10.9
2.4
12.1
ns
VCC = 2.3 V to 2.7 V
2.2
8.6
2.2
9.5
ns
VCC = 3.0 V to 3.6 V
2.1
7.5
2.1
8.3
ns
12. Waveforms
VI
VM
A, B input
GND
t PHL
t PLH
VOH
VM
Y output
mna614
VOL
Measurement points are given in Table 10.
Logic levels: VOL and VOH are typical output voltage drop that occur with the output load.
Fig 7. The data input (A or B) to output (Y) propagation delays
Table 10.
Measurement points
Supply voltage
Output
Input
VCC
VM
VM
VI
tr = tf
0.8 V to 3.6 V
0.5 × VCC
0.5 × VCC
VCC
≤ 3.0 ns
74AUP1G08_2
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
10 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
VCC
VEXT
5 kΩ
PULSE
GENERATOR
VI
VO
DUT
RT
CL
RL
001aac521
Test data is given in Table 11.
Definitions for test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
VEXT = External voltage for measuring switching times.
Fig 8. Load circuitry for switching times
Table 11.
Test data
Supply voltage
Load
VEXT
[1]
VCC
CL
RL
0.8 V to 3.6 V
5 pF, 10 pF, 15 pF and 30 pF
5 kΩ or 1 MΩ
[1]
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ
open
GND
2 × VCC
For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ.
74AUP1G08_2
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
11 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
13. Package outline
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm
E
D
SOT353-1
A
X
c
y
HE
v M A
Z
5
4
A2
A
(A3)
A1
θ
1
Lp
3
L
e
w M
bp
detail X
e1
0
1.5
3 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(1)
e
e1
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.1
0.1
0
1.0
0.8
0.15
0.30
0.15
0.25
0.08
2.25
1.85
1.35
1.15
0.65
1.3
2.25
2.0
0.425
0.46
0.21
0.3
0.1
0.1
0.60
0.15
7°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT353-1
REFERENCES
IEC
JEDEC
JEITA
MO-203
SC-88A
EUROPEAN
PROJECTION
ISSUE DATE
00-09-01
03-02-19
Fig 9. Package outline SOT353-1 (TSSOP5)
74AUP1G08_2
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
12 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b
1
2
3
4×
(2)
L
L1
e
6
5
e1
4
e1
6×
A
(2)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.25
0.17
1.5
1.4
1.05
0.95
0.6
0.5
0.35
0.27
0.40
0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
OUTLINE
VERSION
SOT886
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-07-15
04-07-22
MO-252
Fig 10. Package outline SOT886 (XSON6)
74AUP1G08_2
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
13 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm
1
SOT891
b
3
2
L
L1
e
6
5
e1
4
e1
A
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.20
0.12
1.05
0.95
1.05
0.95
0.55
0.35
0.35
0.27
0.40
0.32
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-03-11
05-04-06
SOT891
Fig 11. Package outline SOT891 (XSON6)
74AUP1G08_2
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
14 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
14. Abbreviations
Table 12.
Abbreviations
Acronym
Description
CDM
Charged Device Model
CMOS
Complementary Metal Oxide Semiconductor
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
TTL
Transistor Transistor Logic
15. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74AUP1G08_2
20060629
Product data sheet
-
74AUP1G08_1
Modifications:
74AUP1G08_1
•
•
ESD HBM and CPD values modified in Section 2, Table 8
Added type number 74AUP1G08GF (XSON6/SOT891 package)
20050720
Product data sheet
74AUP1G08_2
Product data sheet
-
-
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
15 of 17
74AUP1G08
Philips Semiconductors
Low-power 2-input AND gate
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
74AUP1G08_2
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 02 — 29 June 2006
16 of 17
Philips Semiconductors
74AUP1G08
Low-power 2-input AND gate
18. Contents
1
2
3
4
5
6
6.1
6.2
7
8
9
10
11
12
13
14
15
16
16.1
16.2
16.3
16.4
17
18
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: [email protected].
Date of release: 29 June 2006
Document identifier: 74AUP1G08_2