IK Semicon IN74HC640ADW Octal 3-state inverting bus transceiver high-performance silicon-gate cmo Datasheet

TECHNICAL DATA
IN74HC640A
Octal 3-State Inverting
Bus Transceiver
High-Performance Silicon-Gate CMOS
The IN74HC640A is identical in pinout to the LS/ALS640. The
device inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LS/ALSTTL outputs.
The IN74HC640A is a 3-state transceiver that is used for 2-way
asynchronous communication between data buses. The device has an
active-low Output Enable pin, which is used to place the I/O ports into
high-impedance states. The Direction control determines whether data
flows from A to B or from B to A.
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 μA
• High Noise Immunity Characteristic of CMOS Devices
ORDERING INFORMATION
IN74HC640AN Plastic
IN74HC640ADW SOIC
TA = -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
FUNCTION TABLE
Control Inputs
PIN 20=VCC
PIN 10 = GND
Output
Enable
Direction
Operation
L
L
Data Transmitted
from Bus B to
Bus A (inverted)
L
H
Data Transmitted
from Bus A to
Bus B (inverted)
H
X
Buses Isolated
(High Impedance
State)
X = don’t care
Rev. 00
IN74HC640A
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
-0.5 to +7.0
V
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
-1.5 to VCC +1.5
V
DC Output Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
DC Input Current, per Pin
±20
mA
IOUT
DC Output Current, per Pin
±35
mA
ICC
DC Supply Current, VCC and GND Pins
±75
mA
PD
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
-65 to +150
°C
260
°C
VOUT
IIN
Tstg
TL
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VIN, VOUT
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC =2.0 V
VCC =4.5 V
VCC =6.0 V
Min
Max
Unit
2.0
6.0
V
0
VCC
V
-55
+125
°C
0
0
0
1000
500
400
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or
VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open. I/O pins must be connected to a properly terminated line or bus.
Rev. 00
IN74HC640A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
VCC
Symbol
Parameter
Test Conditions
Guaranteed Limit
V
25 °C
to
-55°C
≤85
°C
≤125
°C
Unit
VIH
Minimum HighLevel Input Voltage
VOUT=0.1 V or VCC-0.1 V
⎢IOUT⎢≤ 20 μA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VIL
Maximum Low Level Input Voltage
VOUT=0.1 V or VCC-0.1 V
⎢IOUT⎢ ≤ 20 μA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
VOH
Minimum HighLevel Output Voltage
VIN=VIH or VIL
⎢IOUT⎢ ≤ 20 μA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
VIN=VIH or VIL
⎢IOUT⎢ ≤ 6.0 mA
⎢IOUT⎢ ≤ 7.8 mA
VOL
Maximum LowLevel Output Voltage
VIN= VIL or VIH
⎢IOUT⎢ ≤ 20 μA
VIN= VIL or VIH
⎢IOUT⎢ ≤ 6.0 mA
⎢IOUT⎢ ≤ 7.8 mA
V
IIN
Maximum Input
Leakage Current
VIN=VCC or GND, Pin 1 or
19
6.0
±0.1
±1.0
±1.0
μA
IOZ
Maximum ThreeState Leakage
Current
Output in High-Impedance
State
VIN= VIL or VIH
VOUT=VCC or GND
6.0
±0.5
±5.0
±10
μA
ICC
Maximum Quiescent
Supply Current
(per Package)
VIN=VCC or GND
IOUT=0μA
6.0
4.0
40
160
μA
Rev. 00
IN74HC640A
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Input tr=tf=6.0 ns)
Guaranteed Limit
VCC
Symbol
Parameter
V
25 °C
to
-55°C
≤85°C
≤125°C
Unit
tPLH, tPHL
Maximum Propagation Delay, A to B , B to A
(Figures 1 and 3)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
tPLZ, tPHZ
Maximum Propagation Delay , Direction or
Output Enable to A or B (Figures 2 and 4)
2.0
4.5
6.0
110
22
19
140
28
24
165
33
28
ns
tPZL, tPZH
Maximum Propagation Delay , Direction or
Output Enable to A or B (Figures 2 and 4)
2.0
4.5
6.0
110
22
19
140
28
24
165
33
28
ns
tTLH, tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
CIN
Maximum Input Capacitance (Pin 1 or Pin 19)
-
10
10
10
pF
Maximum Three-State I/O Capacitance
(Output in High-Impedance State)
-
15
15
15
pF
COUT
Power Dissipation Capacitance (Per Transceiver
Channel)
CPD
Used to determine the no-load dynamic power
consumption:
PD=CPDVCC2f+ICCVCC
Figure 1. Switching Waveforms
Typical @25°C,VCC=5.0 V
40
pF
Figure 2. Switching Waveforms
Rev. 00
IN74HC640A
Figure 3. Test Circuit
Figure 4. Test Circuit
EXPANDED LOGIC DIAGRAM
Rev. 00
IN74HC640A
N SUFFIX PLASTIC DIP
(MS - 001AD)
A
Dimension, mm
11
20
B
1
10
Symbol
MIN
MAX
A
24.89
26.92
B
6.1
7.11
5.33
C
F
L
C
-T- SEATING
PLANE
D
0.36
0.56
F
1.14
1.78
G
2.54
H
7.62
N
G
K
M
J
H
D
0.25 (0.010) M T
NOTES:
1. Dimensions “A”, “B” do not include mold flash or protrusions.
Maximum mold flash or protrusions 0.25 mm (0.010) per side.
J
0°
10°
K
2.92
3.81
L
7.62
8.26
M
0.2
0.36
N
0.38
D SUFFIX SOIC
(MS - 013AC)
A
20
11
H
Dimension, mm
B
1
P
10
G
R x 45
C
-TK
D
SEATING
PLANE
J
0.25 (0.010) M T C M
NOTES:
1. Dimensions A and B do not include mold flash or protrusion.
2. Maximum mold flash or protrusion 0.15 mm (0.006) per side
for A; for B ‑ 0.25 mm (0.010) per side.
F
M
Symbol
MIN
MAX
A
12.6
13
B
7.4
7.6
C
2.35
2.65
D
0.33
0.51
F
0.4
1.27
G
1.27
H
9.53
J
0°
8°
K
0.1
0.3
M
0.23
0.32
P
10
10.65
R
0.25
0.75
Rev. 00
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