LED - Chip ELС-940-11 Preliminary 10.04.2007 rev. 03/06 Radiation Type Technology Electrodes Infrared DH AlGaAs/GaAs P (anode) up typ. dimensions (µm) 1000 typ. thickness 260 (±20) µm 1000 cathode gold alloy, 0.5 µm anode gold alloy, 1.5 µm PoC-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit Forward voltage IF = 20 mA VF 1.2 1.3 V Forward voltage2 IF = 350 mA VF 1.6 1.8 V Reverse voltage IR = 10 µA VR 5 Radiant power1 IF = 20 mA Φe 0.8 1.5 mW Radiant power2 IF = 350 mA Φe 17 22 mW Peak wavelength IF = 20 mA λP 930 940 Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 45 nm Switching time IF = 20 mA tr, tf 600 ns V 950 nm 1 Measured on bare chip on TO-18 header with EPIGAP equipment Measured on bare chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) with EPIGAP equipment (for information only) 2 Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-940-11 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1