DONGGUAN NANJING ELECTRONICS LTD., TO-126 Plastic-Encapsulate Transistors MJE13003 TO-126 TRANSISTOR (NPN) FEATURES z Power Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1 . BASE Value Unit 2. COLLECTOR VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 1.25 W Thermal Resistance from Junction to Ambient 100 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA,IB=0 400 V Emitter-base breakdown voltage 6 V(BR)EBO IE=0.1mA,IC=0 Collector cut-off current ICBO VCB=600V,IE=0 100 V Collector cut-off current ICEO VCE=400V,IB=0 100 uA Emitter cut-off current IEBO VEB=7V,IC=0 10 uA uA hFE(1)* VCE=10V, IC=200mA 9 hFE(2) VCE=10V, IC=250μA 5 Collector-emitter saturation voltage VCE(sat)1 IC=200mA,IB=40mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=200mA,IB=40mA 1.1 V DC current gain fT tf tS* Transition frequency Fall time Storage time VCE=10V, IC=100mA,f=1MHz 40 5 MHz IC=100mA 0.5 IC=100mA 2 4 μs CLASSIFICATION of hFE(1) Range 9-15 15-20 20-25 25-30 30-35 35-40 CLASSIFICATION of tS Rank A1 A2 B1 B2 Range 2-2.5 2.5-3 3-3.5 3.5-4 A,Apr,2012