Order this document by BUS98/D SEMICONDUCTOR TECHNICAL DATA 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS (BVCEO) 250 WATTS 850 – 1000 V (BVCES) The BUS98 and BUS98A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications such as: • • • • • Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Fast Turn–Off Times 60 ns Inductive Fall Time – 25_C (Typ) 120 ns Inductive Crossover Time – 25_C (Typ) Operating Temperature Range –65 to + 200_C 100_C Performance Specified for: Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents (125_C) CASE 1–07 TO–204AA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ x MAXIMUM RATINGS Symbol BUS98 BUS98A Unit Collector–Emitter Voltage Rating VCEO(sus) 400 450 Vdc Collector–Emitter Voltage VCEV 850 1000 Vdc Emitter Base Voltage VEB 7 Vdc Collector Current — Continuous — Peak (1) — Overload IC ICM IoI 30 60 120 Adc Base Current — Continuous — Peak (1) IB IBM 10 30 Adc Total Power Dissipation — TC = 25_C — TC = 100_C Derate above 25_C PD 250 142 1.42 Watts TJ, Tstg – 65 to + 200 _C Symbol Max Unit RθJC 0.7 _C/W TL 275 _C Operating and Storage Junction Temperature Range W/_C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max 400 450 — — — — — — — — 0.4 4.0 — — — — 1.0 6.0 Unit OFF CHARACTERISTICS (1) Collector–Emitter Sustaining Voltage (Table 1) (IC = 200 mA, IB = 0) L = 25 mH VCEO(sus) BUS98 BUS98A Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 125_C) Collector Cutoff Current (VCE = Rated VCEV, RBE = 10 Ω) Vdc ICEV TC = 25 _C TC = 125 _C mAdc ICER mAdc Emitter Cutoff Current (VEB = 7 Vdc, IC = 0) IEBO — — 0.2 mAdc Emitter–Base Breakdown Voltage (IE = 100 mA – IC = 0) VEBO 7.0 — — Vdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 12 RBSOA See Figure 13 ON CHARACTERISTICS (1) DC Current Gain (IC = 20 Adc, VCE = 5 Vdc) (IC = 16 Adc, VCE = 5 V) hFE 8 — — — — — — — — — — — — — — — 1.5 3.5 2.0 1.5 5.0 2.0 — — — — — — — — 1.6 1.6 1.6 1.6 Cob — — 700 pF td — 0.1 0.2 µs BUS98 BUS98A Collector–Emitter Saturation Voltage (IC = 20 Adc, IB = 4 Adc) (IC = 30 Adc, IB = 8 Adc) (IC = 20 Adc, IB = 4 Adc, TC = 100_C) (IC = 16 Adc, IB = 3.2 Adc) (IC = 24 Adc, IB = 5 Adc) (IC = 16 Adc, IB = 3.2 Adc, TC = 100_C) VCE(sat) BUS98 BUS98A Base–Emitter Saturation Voltage (IC = 20 Adc, IB = 4 Adc) (IC = 20 Adc, IB = 4 Adc, TC = 100_C) (IC = 16 Adc, IB = 3.2 Adc) (IC = 16 Adc, IB = 3.2 Adc, TC = 100_C) Vdc VBE(sat) BUS98 BUS98A Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) SWITCHING CHARACTERISTICS Restive Load (Table 1) Delay Time Rise Time Storage Time Fall Time (VCC = 250 Vdc, IC = 20 A, IB1 = 4.0 A, tp = 30 µs, Duty Cycle 2%, VBE(off) = 5 V) (for BUS98A: IC = 16 A, Ib1 = 3.2 A) tr — 0.4 0.7 ts — 1.55 2.3 tf — 0.2 0.4 tsv — 1.55 — tfi — 0.06 — tsv — 1.8 2.8 tc — 0.3 0.6 tfi — 0.17 0.35 Inductive Load, Clamped (Table 1) Storage Time Fall Time Storage Time Crossover Time Fall Time IC(pk) = 20 A Ib1 = 4 A VBE(off) = 5 V, VCE(c1) = 250 V) IC(pk) = 16 A lB1 = 3.2 A) (1) Pulse Test: PW = 300 µs, Duty Cycle 2 (BUS98) (BUS98A) (TC = 25_C) (TC = 100_C) µs 2%. Motorola Bipolar Power Transistor Device Data 90% 50 hFE, DC CURRENT GAIN VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) DC CHARACTERISTICS 30 10% 20 10 5 3 2 VCE = 5 V 3 5 7 10 20 IC, COLLECTOR CURRENT (AMPS) 30 10 5 IC = 15 A 3 IC = 20 A IC = 10 A 1 0.5 0.3 TC = 25°C 0.1 0.1 50 βf = 5 90% 10% 1 0.7 0.3 0.1 3 1 10 2 3 4 Figure 2. Collector Saturation Region VBE, BASE EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 0.3 0.5 1 IB, BASE CURRENT (AMPS) βf = 5 2 TJ = 25°C 1 0.7 TJ = 100°C 0.5 0.3 0.3 0.1 20 1 3 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Voltage Figure 4. Base–Emitter Voltage 104 10 10k Cib C, CAPACITANCE (pF) IC, COLLECTOR CURRENT ( µA) VCE = 250 V 103 TJ = 150°C 102 125°C 101 100°C 75°C REVERSE 100 1k 100 Cob FORWARD 25°C 10 –1 – 0.4 TJ = 25°C 10 – 0.2 0 0.2 0.4 0.6 1 10 100 VBE, BASE–EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 1000 3 Table 1. Test Conditions for Dynamic Performance VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING – VC1 CIRCUIT VALUES TEST CIRCUITS 1 2 IB1 MJE210 0 –10 V 2 1 µF Lcoil = 180 µH Rcoil = 0.05 Ω VCC = 20 V TURN–OFF TIME Use inductive switching driver as the input to the resistive test circuit. VCC = 250 V Vclamp = 250 V OUTPUT WAVEFORMS 1N4937 OR EQUIVALENT INPUT SEE ABOVE FOR DETAILED CONDITIONS t1 Lcoil Vclamp tf Clamped t IC(pk) Rcoil tf Pulse Width = 10 µs t1 Adjusted to Obtain IC IC TUT 1 t1 t2 VCE VCC 2 VCE or Vclamp TIME t t2 (IC(pk)) [ LcoilVCC (IC(pk)) [ LcoilVclamp RESISTIVE TEST CIRCUIT TUT 1 RL 2 VCC Test Equipment Scope — Tektronix 475 or Equivalent 20 IC pk VCE(pk) 90% VCE(pk) tsv 90% IC(pk) trv tfi tti tc VCE 50 µF ADJUST VC2 TO OBTAIN DESIRED IB2 Lcoil = 25 mH, VCC = 10 V Rcoil = 0.7 Ω IC IB1 adjusted to obtain the forced hFE desired BUV20 INDUCTIVE TEST CIRCUIT 10% VCE(pk) 90% IB1 10% IC pk 2% IC TIME Figure 7. Inductive Switching Measurements 4 50 µF +10 V PW Varied to Attain IC = 100 mA IB 0.1 µF BUV20 1 20 I B2(pk), BASE CURRENT (AMPS) INPUT CONDITIONS +10 V TURN–ON TIME ADJUST VC1 TO OBTAIN DESIRED IB1 MJE200 βf = 5 IC = 20 A 16 12 8 4 0 0 1 2 3 4 5 VBE(off), BASE–EMITTER VOLTAGE (VOLTS) Figure 8. Peak–Reverse Current Motorola Bipolar Power Transistor Device Data 6 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 – 90% Vclamp tfi = Current Fall Time, 90 – 10% IC tti = Current Tail, 10 – 2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222: PSWT = 1/2 VCCIC(tc) f ] In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. 4 3 0.8 0.6 2 0.4 TC = 100°C 1 0.7 t, TIME ( µs) t, TIME ( µs) INDUCTIVE SWITCHING TC = 25°C 0.5 TC = 100°C TC = 100°C 0.2 TC = 25°C 0.1 TC = 25°C tc tfi βf = 5 βf = 5 2 4 6 8 10 20 IC, COLLECTOR CURRENT (AMPS) 30 2 Figure 9. Storage Time, tsv 3 2 tsv tsv tc 0.2 tfi 0.1 0.05 0.03 TC = 25°C IC = 20 A βf = 5 1 t, TIME ( µs) t, TIME ( µs) 3 2 0.5 0.3 30 Figure 10. Crossover and Fall Times TC = 25°C IC = 20 A VBE(off) = 5 V 1 4 6 8 10 20 IC, COLLECTOR CURRENT (AMPS) 0.5 0.3 0.2 tc 0.1 tfi 0.05 2 4 6 8 10 0.03 1 2 3 4 5 βf, FORCED GAIN Ib2/Ib1 Figure 11a. Turn–Off Times versus Forced Gain Figure 11b. Turn–Off TM Times versus Ib2/Ib1 Motorola Bipolar Power Transistor Device Data 5 IC, COLLECTOR CURRENT (AMPS) The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. SAFE OPERATING AREA INFORMATION FORWARD BIAS 30 20 10 DC 1 ms 5 LIMIT ONLY FOR TURN ON 2 1 0.5 0.2 TC = 25°C 0.1 tr = 0.7 µs w BUS98 BUS98A 0.05 0.02 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 14. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 200 500 1000 5 10 20 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 12. Forward Bias Safe Operating Area REVERSE BIAS IC, COLLECTOR CURRENT (AMPS) 100 For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current conditions during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives RBSOA characteristics. 80 60 BUS98 BUS98A 40 VBE(off) = 5 V TC = 100°C IC/IB1 ≥ 5 20 0 200 400 600 800 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. Reverse Bias Safe Operating Area POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 40 80 120 160 200 TC, CASE TEMPERATURE (°C) Figure 14. Power Derating 6 Motorola Bipolar Power Transistor Device Data 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 D = 0.5 0.2 0.1 P(pk) RθJC(t) = r(t) RθJC RθJC = 0.7°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.05 SINGLE PULSE 0.01 0.1 1.0 10 t1 t2 DUTY CYCLE, D = t1/t2 100 1000 10000 t, TIME (ms) Figure 15. Thermal Response OVERLOAD CHARACTERISTICS IC, COLLECTOR CURRENT (AMPS) 200 OLSOA TC = 25°C 160 120 tp = 10 µs 80 BUS98A BUS98 40 400 450 100 200 300 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 0 500 Figure 16. Rated Overload Safe Operating Area (OLSOA) OLSOA applies when maximum collector current is limited and known. A good example Is a circuit where an inductor is inserted between the transistor and the bus, which limits the rate of rise of collector current to a known value. If the transistor is then turned off within a specified amount of time, the magnitude of collector current is also known. Maximum allowable collector–emitter voltage versus collector current is plotted for several pulse widths. (Pulse width is defined as the time lag between the fault condition and the removal of base drive.) Storage time of the transistor has been factored into the curve. Therefore, with bus voltage and maximum collector current known, Figure 16 defines the maximum time which can be allowed for fault detection and shutdown of base drive. OLSOA is measured in a common–base circuit (Figure 18) which allows precise definition of collector–emitter voltage and collector current. This is the same circuit that is used to measure forward–bias safe operating area. 10 IC, (AMP) 8 6 RBE = 50 Ω 500 µF 500 V RBE = 5 Ω 4 RBE = 1.1 Ω 2 Notes: • VCE = VCC + VBE • Adjust pulsed current source for desired IC, tp RBE = 0 0 2 4 6 dV/dt (KV/µs) Figure 17. IC = f (dV/dt) Motorola Bipolar Power Transistor Device Data 8 VCC VEE 10 Figure 18. Overload SOA Test Circuit 7 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Bipolar Power Transistor Device Data *BUS98/D* BUS98/D