Mitsubishi FX20KMJ-3 High-speed switching use Datasheet

MITSUBISHI Pch POWER MOSFET
RY
A
N
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FX20KMJ-3
.
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IM
REL
P
HIGH-SPEED SWITCHING USE
FX20KMJ-3
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
3
2.6 ± 0.2
2 3
1
• 4V DRIVE
• VDSS ............................................................. –150V
• rDS (ON) (MAX) ................................................ 0.29Ω
• ID .................................................................... –20A
• Integrated Fast Recovery Diode (TYP.) .........100ns
• Viso ................................................................................ 2000V
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
1 GATE
2 DRAIN
3 SOURCE
1
2
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
VGS = 0V
VDS = 0V
Drain current (Pulsed)
Avalanche drain current (Pulsed) L = 30µH
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
AC for 1minute, Terminal to case
Weight
Typical value
Ratings
Unit
–150
±20
V
V
–20
–80
–20
–20
–80
30
A
A
A
A
A
W
–55 ~ +150
–55 ~ +150
2000
°C
°C
V
2.0
g
Jan.1999
MITSUBISHI Pch POWER MOSFET
RY
A
N
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nge
tion
ifica t to cha
pec
al s subjec
in
f
are
ot a
is n limits
his
e: T ametric
ic
t
r
No e pa
Som
IM
REL
FX20KMJ-3
P
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Limits
Test conditions
Turn-off delay time
Fall time
Source-drain voltage
Typ.
Max.
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
–150
—
—
—
—
—
—
±0.1
–0.1
V
µA
mA
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –10A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –10V
–1.0
—
—
—
–1.5
0.23
0.25
–2.3
–2.0
0.29
0.32
–2.9
V
Ω
Ω
V
—
—
—
—
17.5
4470
248
115
—
—
—
—
S
pF
pF
pF
—
—
—
—
15
42
273
114
—
—
—
—
ns
ns
ns
ns
—
–1.0
–1.5
V
—
—
—
100
4.17
—
°C/W
ns
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –80V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω
IS = –10A, VGS = 0V
Channel to case
Thermal resistance
Reverse recovery time
Unit
Min.
IS = –20A, dis/dt = 100A/µs
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
–102
32
24
16
8
0
0
–20
DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
–2
50
100
150
–7
–5
–3
–2
tw = 10µs
–101
100µs
–7
–5
–3
–2
1ms
–100
10ms
–7
–5
DC
TC = 25°C
–3 Single Pulse
–2
–2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS =
–10V
–8V
–6V
–4V
–16
–10
TC = 25°C
Pulse Test
–12
–3V
–8
–2.5V
–4
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
40
VGS = –10V
–8V
–8 TC = 25°C
–6V
–4V
–3V
Pulse Test
–6
PD = 30W
–2.5V
–4
–2
PD = 30W
0
0
–2
–4
–6
–8
–10
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
–1.0
–2.0
–3.0
–4.0
–5.0
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
MITSUBISHI Pch POWER MOSFET
RY
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FX20KMJ-3
P
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ID = –30A
–8
–6
–20A
–4
–10A
–2
0
0
–50
–2
–4
–6
–8
0.4
VGS = –4V
–10V
0.3
0.2
0.1
–2 –3
–5 –7 –101
–2 –3
–5 –7 –102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
TC = 25°C
VDS = –10V
Pulse Test
–40
TC = 25°C
Pulse Test
0 0
–10
–10
VDS = –10V
7 Pulse Test
5
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
0.5
TC = 25°C
Pulse Test
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
–10
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–30
–20
–10
TC = 25°C
75°C
125°C
3
2
101
7
5
3
2
0
0
–2
–4
–6
–8
100 0
–10
–10
–5 –7 –101
–2 –3
–5 –7 –102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
103
7
5
3
2
103
7
5
3
2
Coss
102
7
5
Crss
3 TCh = 25°C
2 f = 1MHZ
VGS = 0V
101 0
–10
–2 –3
TCh = 25°C
VDD = –80V
VGS = –10V
RGEN = RGS = 50Ω
7
5
Ciss
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
–2 –3
3
td(off)
2
tf
102
7
5
tr
3
td(on)
2
–5 –7 –101
–2 –3
–5 –7 –102
DRAIN-SOURCE VOLTAGE VDS (V)
101
–7 –100
–2 –3
–5 –7 –101
–2 –3
–5 –7
DRAIN CURRENT ID (A)
Jan.1999
MITSUBISHI Pch POWER MOSFET
RY
A
N
I
.
.
nge
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pec
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in
f
are
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No e pa
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IM
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FX20KMJ-3
P
HIGH-SPEED SWITCHING USE
–10
SOURCE CURRENT IS (A)
VDS = –50V
–80V
–100V
–6
–4
–2
0
20
40
60
80
–8
–4
–0.4
–0.8
–1.2
–1.6
–2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
3
2
100
7
5
3
2
–50
0
50
100
–2.4
–1.6
–0.8
0
150
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = –10V
ID = –1mA
–3.2
CHANNEL TEMPERATURE Tch (°C)
0.4
0
GATE CHARGE Qg (nC)
VGS = –10V
7 ID = 1/2ID
5 Pulse Test
1.4
TC = 125°C
75°C
25°C
–12
0
101
10–1
TC = 25°C
Pulse Test
–16
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
–20
TCh = 25°C
ID = –20A
–8
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5 D = 1.0
3 0.5
2
0 0.2
10
7 0.1
5
3
2
10–1
7
5
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= tw
T
3
2
10–2 –4
10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
PULSE WIDTH tw (s)
Jan.1999
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