ON NTR4171P Power mosfet Datasheet

NTR4171P
Power MOSFET
−30 V, −3.5 A, Single P−Channel, SOT−23
Features
•
•
•
•
Low RDS(on) at Low Gate Voltage
Low Threshold Voltage
High Power and Current Handling Capability
This is a Pb−Free Device
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V(BR)DSS
Applications
• Load Switch
• Optimized for Battery and Load Management Applications in
−30 V
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−30
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
−2.2
TA = 85°C
−1.5
t≤5s
TA = 25°C
Steady
State
ID
75 mW @ −10 V
−2.2 A
110 mW @ −4.5 V
−1.8 A
150 mW @ −2.5 V
−1.0 A
S
G
A
D
−3.5
0.48
TA = 25°C
PD
t≤5s
Pulsed Drain Current
ID MAX
P−CHANNEL MOSFET
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
RDS(on) MAX
W
1.25
3
IDM
−15.0
TJ,
Tstg
−55 to
150
°C
Source Current (Body Diode)
IS
−1.0
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
tp = 10 ms
Operating Junction and Storage Temperature
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
MARKING DIAGRAM/
PIN ASSIGNMENT
Symbol
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
260
°C/W
Junction−to−Ambient − t ≤ 10 s (Note 1)
RqJA
100
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
3
Drain
1
2
SOT−23
CASE 318
STYLE 21
TRFMG
G
1
Gate
2
Source
TRF
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTR4171PT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
NTR4171PT3G
SOT−23
(Pb−Free)
10000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
October, 2016 − Rev. 2
1
Publication Order Number:
NTR4171P/D
NTR4171P
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
−30
Typ
Max
Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
/TJ
ID = −250 mA, Reference to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = −24 V, TJ = 25°C
VGS = 0 V, VDS = −24 V, TJ = 85°C
−1.0
−5.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "12 V
±0.1
mA
VGS(TH)
VGS = VDS, ID = −250 mA
−1.4
V
V
24
mV/°C
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
gFS
−0.7
−1.15
3.5
mV/°C
mW
VGS = −10 V, ID = −2.2 A
50
75
VGS = −4.5 V, ID = −1.8 A
60
110
VGS = −2.5 V, ID = −1.0 A
90
150
VDS = −5.0 V, ID = −2.2 A
7.0
S
720
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
VGS = 0 V, f = 1.0 MHz,
VDS = −15 V
95
65
nC
15.6
VGS = −10 V, VDS = −15 V,
ID = −3.5 A
0.7
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
2.6
Total Gate Charge
QG(TOT)
7.4
Threshold Gate Charge
QG(TH)
0.7
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
2.6
RG
6.1
W
8.0
ns
Gate Resistance
VGS = −4.5 V, VDS = −15 V,
ID = −3.5 A
1.6
nC
1.6
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = −10 V, VDS = −15 V,
ID = −3.5 A, RG = 6 W
11
32
tf
14
td(on)
9.0
tr
td(off)
VGS = −4.5 V, VDS = −15 V,
ID = −3.5 A, RG = 6 W
tf
ns
16
25
22
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
VGS = 0 V, IS = −1.0 A, TJ = 25°C
−0.8
tRR
14
Charge Time
ta
10
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = −1.0 A,
dISD/dt = 100 A/ms
QRR
−1.2
V
ns
4.0
8.0
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
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2
NTR4171P
TYPICAL CHARACTERISTICS
10
10
−4.5 V
6.0
5.0
−2.2 V
4.0
3.0
VGS = −2.0 V
2.0
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
4.0
4.5
5.0
7.0
6.0
5.0
TJ = 25°C
4.0
3.0
2.0
TJ = 125°C
1.0 1.25
1.5
TJ = −55°C
1.75
2.0
2.25
2.75
2.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.30
TJ = 25°C
ID = −2.2 A
0.25
0.20
0.15
0.10
0.05
0
VDS = −5 V
8.0
1.0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
7.0
1.0
0
RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE (W)
−2.5 V
−10 V
8.0
9.0
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
3.0
0.30
−2.0 V
−2.2 V
TJ = 25°C
0.25
0.20
−2.5 V
0.15
0.10
−4.5 V
0.05
0
VGS = −10 V
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
−VGS, GATE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.6
1.5
1.4
VGS = −4.5 V
ID = −2.2 A
IDSS, LEAKAGE (nA)
−ID, DRAIN CURRENT (A)
9.0
1.3
TJ = 150°C
1000
1.2
1.1
1.0
0.9
TJ = 125°C
100
0.8
0.7
0.6
−50
−25
0
25
50
75
100
125
10
150
0
5.0
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTR4171P
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
800
700
600
500
400
300
Coss
200
100 C
rss
0
0
t, TIME (ns)
1000
5.0
10
15
20
25
30
−VDS
−VGS
12
8.0
10
8.0
6.0
4.0
VDS = −15 V
TJ = 25°C
ID = −3.5 A
QGD
QGS
6.0
4.0
2.0
0
2.0
0
2.0
4.0
6.0
8.0
10
12
0
16
14
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
VGS = −10 V
VDD = −15 V
ID = −3.5 A
td(off)
tf
tr
10
td(on)
1.0
10
TJ = 125°C
100
TJ = 150°C
1.0
TJ = 25°C
0.1
TJ = −55°C
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
RG, GATE RESISTANCE (W)
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1.5
30
ID = −250 mA
1.4
25
1.3
1.2
POWER (W)
−VGS(th) (V)
14
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
1.0
16
QT
10
−IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
900
12
1.1
1.0
0.9
0.8
20
15
10
5.0
0.7
0.6
−50
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1100
1000
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
−25
0
25
50
75
100
125
0
150
0.001
0.01
0.1
1.0
10
100
TJ, TEMPERATURE (°C)
SINGLE PULSE TIME (s)
Figure 11. Threshold Voltage
Figure 12. Single Pulse Maximum Power
Dissipation
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4
1000
NTR4171P
TYPICAL CHARACTERISTICS
−ID, DRAIN CURRENT (A)
100
10
VGS = −12 V
Single Pulse
TC = 25°C
10 ms
100 ms
1.0
1 ms
10 ms
0.1
0.01
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1.0
dc
10
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
R(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE (NORMALIZED)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
1.0
Duty Cycle = 0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
Single Pulse
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 14. FET Thermal Response
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5
10
100
1000
NTR4171P
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR4171P/D