mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT−723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many other portable applications. PIN 1. CATHODE 2. CATHODE 3. ANODE Specification Features: • Small Body Outline Dimensions: • • • • • • • • http://onsemi.com 0.047″ x 0.032″ (1.20 mm x 0.80 mm) Low Body Height: 0.020″ (0.5 mm) Stand−off Voltage: 3.3 V − 6.0 V Low Leakage Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model IEC61000−4−2 Level 4 ESD Protection IEC61000−4−4 Level 4 EFT Protection These are Pb−Free Devices 3 1 2 SOT−723 CASE 631AA STYLE 4 Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any xx M xx M = Device Code = Date Code ORDERING INFORMATION Device QUALIFIED MAX REFLOW TEMPERATURE: 260°C mESDxxDT5G Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating 3 2 MARKING DIAGRAM Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic IEC 61000−4−2 (ESD) 1 Symbol Air Contact Value Unit ±30 ±30 kV Package Shipping† SOT−723 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. IEC 61000−4−4 (EFT) 40 A DEVICE MARKING INFORMATION ESD Voltage 16 400 kV V See specific marking information in the device marking column of the table on page 2 of this data sheet. 240 1.9 525 mW mW/°C °C/W Per Human Body Model Per Machine Model ⎪ PD Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient RqJA Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 1 1 Publication Order Number: mESD3.3DT5G/D mESD3.3DT5G SERIES ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR Working Peak Reverse Voltage VC VBR VRWM Maximum Reverse Leakage Current @ VRWM Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation V IR VF IT Breakdown Voltage @ IT IT C IF Parameter IPP Max. Capacitance @VR = 0 and f = 1 MHz Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Device* Device Marking VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT C (pF) Max Max Min mA Typ mESD3.3DT5G L0 3.3 1.0 5.0 1.0 47 mESD5.0DT5G L2 5.0 0.1 6.2 1.0 38 mESD6.0DT5G L3 6.0 0.1 7.0 1.0 34 *Other voltages available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. http://onsemi.com 2 mESD3.3DT5G SERIES 7.4 20 7.3 18 7.2 16 7.1 14 mESDxxDT5G 7.0 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ) TYPICAL CHARACTERISTICS 6.9 6.8 12 10 8 6.7 6.6 6 6.5 4 mESDxxDT5G 6.4 2 6.3 −55 0 −55 + 150 + 25 TEMPERATURE (°C) Figure 1. Typical Breakdown Voltage versus Temperature Figure 2. Typical Leakage Current versus Temperature 300 PD, POWER DISSIPATION (mW) 45 40 CAPACITANCE (pF) + 150 + 25 TEMPERATURE (°C) 35 30 mESDxxDT5G 25 20 15 10 5 0 0 1 2 3 4 250 200 150 100 FR−5 BOARD 50 0 5 0 BIAS VOLTAGE (V) Figure 3. Typical Capacitance versus Bias Voltage 25 50 75 100 125 TEMPERATURE (°C) 150 175 Figure 4. Steady State Power Derating Curve Figure 5. Positive 8 kV contact per IEC 6100−4−2 − mESD5.0DT5G Figure 6. Negative 8 kV contact per IEC 61000−4−2 − mESD5.0DT5G http://onsemi.com 3 mESD3.3DT5G SERIES PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE SOLDER FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches SOT−723 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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