Intersil HA1-5004/883 100mhz current feedback amplifier Datasheet

NS
ESIG t
D
NE W
ter a
®
FOR ort Cen /tsc
D
E
p
D
om
l Sup
M EN
sil.c
COM echnica w.inter
E
R
NOT act our T IL or ww
cont -IN TERS
8
1-88
HA-5004/883
100MHz Current Feedback Amplifier
July 1998
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HA-5004/883 current feedback amplifier is a video/wideband
amplifier optimized for low gain applications. The design is based
on current-mode feedback which allows the amplifier to achieve
higher closed loop bandwidth than voltage-mode feedback operational amplifiers. Since feedback is employed, the HA-5004/883
can offer better gain accuracy and lower distortion than open
loop buffers. Unlike conventional op amps, the bandwidth and
rise time of the HA-5004/883 are nearly independent of closed
loop gain. The 100MHz bandwidth at unity gain reduces to only
65MHz at a gain of 10. The HA-5004/883 may be used in place
of a conventional op amp with a significant improvement in speed
power product.
• Slew Rate . . . . . . . . . . . . . . . . . . . . . . 1000V/µs (Min)
1200V/µs (Typ)
• Output Current . . . . . . . . . . . . . . . . . . . . ±80mA (Min)
±100mA (Typ)
• Drives . . . . . . . . . . . . . . . . . . . ±8.0V into 100Ω (Min)
±9.5V into 100Ω (Typ)
• VSUPPLY . . . . . . . . . . . . . . . . . . . . . . . . . ±5V to ±18V
Several features have been designed in for added value. A thermal overload feature protects the part against excessive junction
temperature by shutting down the output. If this feature is not
needed, it can be inhibited via a TTL input (TOI). A TTL chip
enable/disable (OE) input is also provided; when the chip is disabled its output is high impedance. Finally, an open collector output flag (TOL) is provided to indicate the status of the chip. The
status flag goes low to indicate when the chip is disabled due to
either the internal Thermal Overload shutdown or the external
disable.
• Thermal Overload Protection and Output Flag
• Bandwidth Nearly Independent of Gain
• Output Enable/Disable
Applications
• Unity Gain Video/Wideband Buffer
• Video Gain Block
• High Speed Peak Detector
In order to maximize bandwidth and output drive capacity, internal current limiting is not provided. However, current limiting may
be applied via the VC + and VC - pins which provide power separately to the output stage.
• Fiber Optic Transmitters
• Zero Insertion Loss Transmission Line Drivers
• Current to Voltage Converter
Ordering Information
• Radar Systems
PART NUMBER
HA1-5004/883
TEMP. RANGE
(oC)
-55 to +125
PACKAGE
14 Lead CerDIP
Pinout
HA-5004/883
(CERDIP)
TOP VIEW
VC +
1
14 V C
OUT
2
13 V-
+BAL
3
-BAL
4
V+
5
+
12 FB
11 IN
10 TOL
TOI 6
9
GND
7
8
NC
OE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© Harris Corporation 1998
1
511053-883
File Number 3706.1
Spec Number
HA-5004/883
Absolute Maximum Ratings
Thermal Information
Voltage between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current Pulsed at 1ms ≤ 10% Duty Cycle . . . . ±300mA
Continuous Output Current. . . . . . . . . . . . . . . . . . . . . . . . .±120mA rms
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
θJC
Thermal Resistance
θJA
CerDIP Package . . . . . . . . . . . . . . . . . . .
73oC/W
18oC/W
Package Power Dissipation Limit at +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.37W
Package Power Dissipation Derating Factor Above +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ±12V to ±15V
RL ≥ 100Ω
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V+ = VC+ = +15V, V- = VC - = -15V, R L = 100Ω, AV = +1, RF = 250Ω, OE = 0.8V, TOI = 0.8V or 2.0V,
Unless Otherwise Specified.
LIMITS
PARAMETERS
Input Offset Voltage
Input Bias Current
DC Gain Error
(Small Signal)
DC Gain Error
(Large Signal)
SYMBOL
VIO
+IB
SSGE
LSGE1
LSGE2
DC Voltage Gain
DC Transimpedance
Output Voltage Swing
AV
AR
±VOUT1
±VOUT2
Output Current
±IOUT
CONDITIONS
GROUP A
SUBGROUP
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-2.5
2.5
mV
2, 3
+125oC, -55oC
-20
20
mV
1
+25oC
-5
5
µA
2, 3
+125oC, -55oC
-20
20
µA
1
+25oC
-
0.43
%
2, 3
+125oC, -55oC
-
0.75
%
1
+25oC
-
0.43
%
2, 3
+125oC, -55oC
-
0.75
%
1
+25oC
-
0.43
%
2, 3
+125oC, -55oC
-
0.75
%
1
+25oC
233
-
V/V
2, 3
+125oC, -55oC
133
-
V/V
1
+25oC
58
-
V/mA
2, 3
+125oC, -55oC
33
-
V/mA
1
+25oC
11.5
-11.5
V
2, 3
+125oC, -55oC
10.5
-10.5
V
1
+25oC
9.0
-9.0
V
2, 3
+125oC, -55oC
8.0
-8.0
V
1
+25oC
90
-90
mA
2, 3
+125oC, -55oC
80
-80
mA
VIN = 0V
VIN = 0V (Note 1)
VIN = ±100mV,
RL = 100Ω
VIN = ±5.0V,
RL = 1kΩ
VIN = ±10V,
RL = 1kΩ
For All Gain Error
Conditions (Note 2)
For All Gain Error
Conditions (Note 3)
VIN = ±15V,
RL = 1kΩ
VIN = ±10V,
RL = 100Ω
VIN = ±10V,
RL = 100Ω
2
HA-5004/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V+ = VC+ = +15V, V- = VC - = -15V, R L = 100Ω, AV = +1, RF = 250Ω, OE = 0.8V, TOI = 0.8V or 2.0V,
Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
Logic Input Voltage
VIH
MIN
MAX
UNITS
1
+25oC
2.0
-
V
2, 3
+125oC, -55oC
2.0
-
V
1
+25oC
-
0.8
V
2, 3
+125oC, -55oC
-
0.8
V
1
+25oC
50
-
dB
2, 3
+125oC, -55oC
50
-
dB
1
+25oC
50
-
dB
2, 3
+125oC, -55oC
50
-
dB
1
+25oC
-
16
mA
2, 3
+125oC, -55oC
-
22
mA
1
+25oC
-16
-
mA
2, 3
+125oC, -55oC
-22
-
mA
Pins OE, TOI
PSRR1
PSRR2
Power Supply Current
TEMPERATURE
Pins OE, TOI (Note 4)
VIL
Power Supply
Rejection Ratio
CONDITIONS
GROUP A
SUBGROUP
+ICC
-ICC
V+ = +10V, +20V
V- = -15V
V- = -10V, -20V
V+ = +15V
VIN = 0V, RL = 1kΩ
VIN = 0V, RL = 1kΩ
NOTES:
1. Inverting (FB) input is a low impedance point; Bias Current and Offset Current are not specified for this terminal.
2. DC Voltage Gain =
1
--------------------------Gain Error
, for all Gain Error conditions.
R
F
--------------------------- , RF = 250Ω, for all Gain Error conditions.
Gain Error
4. Please refer to the Truth Table in the Applications Information section.
3. DC Transimpedance =
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V+ = VC+ = +15V, V- = VC - = -15V, R L = 1kΩ , AV = +1, R F = 250Ω, CL ≤ 10pF, OE = 0.8V, TOI = 0.8V or 2.0V,
Unless Otherwise Specified.
LIMITS
PARAMETERS
Slew Rate
Rise and Fall Time
Full Power Bandwidth
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
+SR
VOUT = 0V to +10V
1, 2
+25oC
1000
-
V/µs
-SR
VOUT = 0V to -10V
1, 2
+25oC
1000
-
V/µs
TR
VOUT = 0V to +200mV,
1, 2
+25oC
-
7.0
ns
TF
VOUT = 0V to -200mV
1, 2
+25oC
-
7.0
ns
VPEAK = 2V
1, 3
+25oC
79.5
-
MHz
FPBW
3
HA-5004/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: V+ = VC+ = +15V, V- = VC - = -15V, R L = 1kΩ , AV = +1, R F = 250Ω, CL ≤ 10pF, OE = 0.8V, TOI = 0.8V or 2.0V,
Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
Quiescent Power
Consumption
PC
CONDITIONS
VIN = 0V
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 4
-55oC to +125oC
-
660
mW
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Measured between 10% and 90% points.
3. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
4. Power Consumption based upon Quiescent Supply Current test maximum.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3
Group A Test Requirements
1, 2, 3
Groups C & D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
4
HA-5004/883
Die Characteristics
WORST CASE CURRENT DENSITY:
6.6 x 104A/cm 2
DIE DIMENSIONS:
63 x 93 x 19 mils ± 1 mils
1600 x 2370 x 483µm ± 25.4µm
SUBSTRATE POTENTIAL (Powered Up): VEE
TRANSISTOR COUNT: 64
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
PROCESS: Bipolar Dielectric Isolation
GLASSIVATION:
Type: Nitride (Si3N4) over (Silox, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
Metallization Mask Layout
HA-5004/883
OE
TOI
GND
TOL
V+
IN
-BAL
FB
+BAL
V-
VC-
VC+
5
OUT
Similar pages