SEMTECH MMBTSA1576 Pnp silicon epitaxial planar transistor Datasheet

MMBTSA1576
PNP Silicon Epitaxial Planar Transistor
The transistor is subdivided into three groups Q, R and
S according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Feature
SOT-23 Plastic Package
․Excellent hFE linearity
Absolute Maximum Ratings (Ta = 25 OC)
Symbol
Value
Unit
Collector Base Voltage
-VCBO
60
V
Collector Emitter Voltage
-VCEO
50
V
Emitter Base Voltage
-VEBO
6
V
Collector Current
-IC
150
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
MMBTSA1576
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
Q
hFE
120
-
270
-
R
hFE
180
-
390
-
S
hFE
270
-
560
-
-ICBO
-
-
0.1
µA
-IEBO
-
-
0.1
µA
-VCE(sat)
-
-
0.5
V
-V(BR)CBO
60
-
-
V
-V(BR)CEO
50
-
-
V
-V(BR)EBO
6
-
-
V
fT
-
140
-
MHz
Cob
-
4.0
5
pF
DC Current Gain
at –VCE=6V, -IC=1mA
Collector Cutoff Current
at –VCB=60V
Emitter Cutoff Current
at –VEB=6V
Collector Saturation Voltage
at –IC=50mA, -IB=5mA
Collector Base Breakdown Voltage
at –IC=50µA
Collector Emitter Breakdown Voltage
at –IC=1mA
Emitter Base Breakdown Voltage
at –IE=50µA
Transition Frequency
at –VCE=12V, -IE=2mA, f=30MHz
Output Capacitance
at –VCB=12V, f=1MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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