ON NSB4904DW1T2G Dual bias resistor transistor Datasheet

NSB4904DW1T1G,
NSB4904DW1T2G
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
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6
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSB4904DW1T1G and
NSB4904DW1T2G, two complementary BRT devices are housed in
the SC−88/SOT−363 package which is ideal for low power surface
mount applications where board space is at a premium.
5
R1
R2
Q1
Q2
R2
1
R1
2
3
1
Features
•
•
•
•
4
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for
SC−88/SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
6
Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
RC MG
G
1
RC = Device Marking
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See specific ordering information in the ordering information
table on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 2
1
Publication Order Number:
NSB4904DW1T1G/D
NSB4904DW1T1G, NSB4904DW1T2G
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/°C
RqJA
670 (Note 1)
490 (Note 2)
°C/W
Symbol
Max
Unit
PD
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
mW/°C
Thermal Resistance −
Junction-to-Ambient
RqJA
493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance −
Junction-to-Lead
RqJL
188 (Note 1)
208 (Note 2)
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
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2
NSB4904DW1T1G, NSB4904DW1T2G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nA
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nA
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)
IEBO
−
−
0.1
mA
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
V
Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
V
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
hFE
80
140
−
VCE(sat)
−
−
0.25
V
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
−
−
0.2
V
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
−
V
Input Resistor
R1
32.9
47
61.1
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
PD, POWER DISSIPATION (mW)
300
250
200
150
100
RqJA = 490°C/W
50
0
−50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
ORDERING INFORMATION AND RESISTOR VALUES
R1 (K)
R2 (K)
Package
Shipping†
NSB4904DW1T1G
47
47
SOT−363
(Pb−Free)
3000/Tape & Reel
NSB4904DW1T2G
47
47
SOT−363
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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3
NSB4904DW1T1G, NSB4904DW1T2G
10
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSB4904DW1T1G, NSB4904DW1T2G NPN TRANSISTOR
1
25°C
TA=-25°C
75°C
0.1
VCE = 10 V
TA=75°C
25°C
-25°C
100
0.01
0
10
50
20
40
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
1
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
1
100
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
0.4
0.2
0
0
25°C
75°C
0.6
TA=-25°C
10
1
0.1
0.01
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
0.8
100
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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4
50
10
NSB4904DW1T1G, NSB4904DW1T2G
1
1000
IC/IB = 10
TA=-25°C
h FE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − NSB4904DW1T1G, NSB4904DW1T2G PNP TRANSISTOR
25°C
75°C
0.1
0.01
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
1
100
0.6
0.4
0.2
0
0
-25°C
1
0.1
0.01
Figure 9. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
9
10
Figure 10. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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5
NSB4904DW1T1G, NSB4904DW1T2G
PACKAGE DIMENSIONS
SC−88/SOT−363/SC70−6
CASE 419B−02
ISSUE W
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
6
5
4
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
M
A3
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NSB4904DW1T1G/D
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