AOSMD AO5404E N-channel enhancement mode field effect transistor Datasheet

AO5404E
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO5404E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
-RoHS compliant
VDS (V) = 20V
ID = 0.5 A (VGS = 4.5V)
RDS(ON) < 0.55 Ω (VGS = 4.5V)
RDS(ON) < 0.68 Ω (VGS = 2.5V)
RDS(ON) < 0.80 Ω (VGS = 1.8V)
ESD PROTECTED!
SC89-3L
D
D1
G
S1
S
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
V
Drain-Source Voltage
DS
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A, F
ID
TA=70°C
PD
TA=70°C
TJ, TSTG
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
C
Steady-State
Alpha & Omega Semiconductor, Ltd.
0.5
0.45
A
3
Junction and Storage Temperature Range
Maximum Junction-to-Lead
V
0.5
IDM
TA=25°C
Power Dissipation
±8
0.5
Pulsed Drain Current B
A
20
Units
V
Steady State
RθJA
RθJL
0.38
0.28
0.24
0.18
°C
-55 to 150
Typ
275
360
300
W
Max
330
450
350
Units
°C/W
°C/W
°C/W
www.aosmd.com
AO5404E
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
20
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.45
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
3
TJ=55°C
5
VDS=0V, VGS=±4.5V
µA
V
0.395
0.55
0.6
0.85
VGS=2.5V, ID=0.5A
0.479
0.68
Ω
VGS=1.8V, ID=0.3A
0.578
0.8
Ω
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=0.5A
1.5
VSD
Diode Forward Voltage
IS=0.1A,VGS=0V
Maximum Body-Diode Continuous Current
0.65
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
µA
1
Static Drain-Source On-Resistance
Output Capacitance
±1
±100
RDS(ON)
Crss
µΑ
0.6
VDS=0V, VGS=±8V
VGS=4.5V, ID=0.5A
Coss
Units
V
1
VDS=20V, VGS=0V
IDSS
IS
Max
35
VGS=0V, VDS=10V, f=1MHz
VGS=5V, VDS=10V, RL=50Ω,
RGEN=3Ω
S
1
V
0.4
A
45
pF
8
pF
6
pF
0.63
VGS=4.5V, VDS=10V, ID=0.5A
1
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=0.5A, dI/dt=100A/µs
nC
0.08
nC
0.16
nC
4.5
ns
3.3
ns
78
ns
32
IF=0.5A, dI/dt=100A/µs
Ω
8
ns
10
2
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
0.5
B: Repetitive rating, pulse width limited by junction temperature.
0.45
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The SOA curve
0.28
provides a single pulse rating.
0.18
F. The maximum current rating is limited by bond-wires
Rev0: Jan, 08
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5404E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2
3
4.5V
VDS=5V
2.5V
1.5
3.5V
2
25°C
ID(A)
ID (A)
2V
Vgs=1.5V
1
125°C
1
0.5
1V
0
0
0
1
2
3
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
1.8
RDS(ON) (Ω)
0.7
Normalized On-Resistance
0.8
VGS=1.8V
0.6
VGS=2.5V
0.5
0.4
VGS=4.5V
0.3
0.2
VGS=4.5V
ID=0.5A
1.6
1.4
VGS=1.8V
ID=-0.3A
1.2
VGS=2.5V
ID=0.5A
1
0.8
0.6
0
0.2
0.4
0.6
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
0.5
0.45
1.0E+00
1
ID=0.5A
1.0E-01
0.8
125°C
0.28
125°C
0.18
1.0E-02
0.6
IS (A)
RDS(ON) (Ω)
25
0.4
25°C
1.0E-03
1.0E-04
25°C
0.2
1.0E-05
1.0E-06
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
www.aosmd.com
AO5404E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
5
VDS=10V
ID=0.5A
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
40
20
Coss
1
0
Crss
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
RDS(ON)
limited
10
100µ
0.1s
DC
0.1
0.1
1ms
1
6
10
2
0
0.0001
100
0.001
0.01
VDS (Volts)
1
10
100
0.5
0.45
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=450°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.28
0.18
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
8
4
10ms
1s
10s
TJ(Max)=150°C
TA=25°C
0.0
TJ(Max)=150°C
TA=25°C
12
Power (W)
ID (Amps)
15
14
10µs
ZθJA Normalized Transient
Thermal Resistance
10
VDS (Volts)
Figure 8: Capacitance Characteristics
10.0
1.0
5
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Similar pages