NUF6410MN 6 Line EMI Filter with ESD Protection This device is a 6 line EMI filter array for wireless applications. Greater than -20 dB typical attenuation is obtained at frequencies from 800 MHz to 3.0 GHz. The NUF6410MN has a typical cut-off frequency of 250 MHz. This DFN package is specifically designed to enhance EMI filtering for low-profile or slim design electronics especially where space and height is a premium. It also offers ESD protection clamping transients from static discharges. ESD protection is provided across all capacitors. Features http://onsemi.com 12 1 Cd Cd Cd Cd Cd Cd Cd Cd Cd Cd Cd Cd 2 •EMI Filtering and ESD Protection •Integration of 30 Discrete Components •DFN Package, 1.35 x 3.0 mm •Moisture Sensitivity Level 1 •ESD Ratings: IEC61000-4-2 (Level 4) 11 3 Machine Model = C Human Body Model = 3B •This is a Pb-Free Device* 4 Benefits 5 •Reduces EMI/RFI Emissions on a Data Line •Integrated Solution Offers Cost and Space Savings in a DFN Package •Excellent S21 Characteristics with very Low Parasitic Inductances •Integrated Solution Improves System Reliability •Compatible Footprint to BGA or Flip-Chip Package 10 9 8 6 7 (Top View) Applications •EMI Filtering and ESD Protection for Data Lines •Wireless Phones •PDAs and Handheld Products •Digital Camera •LCD Displays MARKING DIAGRAM 1 12 DFN12 CASE 506AD 1 1 2 3 4 5 6 6410 = Specific Device Code = Date and Assembly Location M G = Pb-Free Package (Note: Microdot may be in either location) GND 12 11 10 9 8 (Bottom View) ORDERING INFORMATION 7 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 October, 2007 - Rev. 2 64 10 MG G 1 Device Package Shipping† NUF6410MNT1G DFN12 (Pb-Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NUF6410MN/D NUF6410MN MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol ESD Discharge IEC61000-4-2 Value VPP Unit kV Contact Discharge 8.0 DC Power per Resistor PR 100 mW DC Power per Package PT 600 mW Operating Temperature Range TOP -40 to 85 °C Storage Temperature Range TSTG -55 to 150 °C TL 260 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Min Typ VBR IR = 1.0 mA 6.0 7.0 Leakage Current IR VRWM = 3.3 V Resistance RA IR = 20 mA Capacitance (Notes 1 and 2) Cd Cut-Off Frequency (Note 3) f3dB Maximum Reverse Working Voltage Breakdown Voltage Symbol VRWM Max Unit 5.0 V V 10 100 nA 100 115 VR = 2.5 V, f = 1.0 MHz 7.0 9.0 pF Above this frequency, appreciable attenuation occurs 250 1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz. 2. Total line capacitance is 2 times the Diode Capacitance (Cd). 3. 50 source and 50 load termination. http://onsemi.com 2 85 MHz NUF6410MN 0 0 -5 -10 -10 -20 S41 (dB) S21 (dB) -15 -20 -25 -30 -30 -40 -50 -60 -35 -70 -40 -45 1.0E+6 10.0E+6 100.0E+6 1.0E+9 10.0E+9 -80 1.E+06 1.E+07 1.E+09 1.E FREQUENCY (Hz) FREQUENCY (Hz) Figure 1. Typical Insertion Loss Characteristic Figure 2. Typical Analog Crosstalk 2 110 108 106 1.5 RESISTANCE () NORMALIZED CAPACITANCE 1.E+08 1 0.5 104 102 100 98 96 94 92 0 0 1 2 3 4 90 -40 5 REVERSE VOLTAGE (V) Figure 3. Typical Capacitance vs. Reverse Biased Voltage (Normalized Capacitance, Cd @ 2.5 V) -20 0 20 40 TEMPERATURE (°C) 60 80 Figure 4. Typical Resistance over Temperature http://onsemi.com 3 NUF6410MN PACKAGE DIMENSIONS DFN12 3.0x1.35, 0.5P CASE 506AD-01 ISSUE G 2X 0.15 C A D B (A3) E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. EXPOSED PADS CONNECTED TO DIE FLAG. USED AS TEST CONTACTS. 2X 0.15 C EXPOSED Cu TOP VIEW DIM A A1 A3 b D D2 E E2 e K L PIN ONE REFERENCE (A3) 0.10 C A 12 X 0.08 C SEATING PLANE SIDE VIEW A1 2X 0.2 X 0.25 MM NOTE 5 12 X 1 12 X K C SOLDERING FOOTPRINT* D2 L 12 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 3.00 BSC 2.10 2.30 1.35 BSC 0.20 0.40 0.50 BSC 0.20 --0.20 0.40 e 2.352 0.093 EXPOSED PAD 6 E2 0.351 0.014 7 12 X b 0.10 C A B BOTTOM VIEW 0.05 C NOTE 3 0.265 0.01 0.479 0.019 SCALE 16:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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