KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088 : KST5089 30 25 V V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage 4.5 V IC Collector Current 50 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO Parameter Collector-Base Breakdown Voltage : KST5088 : KST5089 Test Condition IC=100µA, IE=0 Collector-Emitter Breakdown Voltage : KST5088 : KST5089 IC=1mA, IB=0 Min. Max. Units 35 30 V V 30 25 V V Collector Cut-off Current : KST5088 : KST5089 VCB=20V, IE=0 VCB=15V, IE=0 50 50 nA nA IEBO Emitter Cut-off Current VEB=3V, IC=0 50 nA hFE DC Current Gain ICBO : KST5088 : KST5089 : KST5088 : KST5089 : KST5088 : KST5089 VCE=5V, IC=100µA VCE=5V, IC=1mA VCE=5V, IC=10mA 300 400 350 450 300 400 900 1,200 VCE(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.5 VBE(sat) Base-Emitter Saturation Voltage IC=10mA, IB=1mA 0.8 fT Current Gain-Bandwidth Product VCE=5V, IC=500µA, f=20MHz Cob Output Capacitance VCB=5V, IE=0, f=100KHz 4 pF NF Noise Figure IC=100µA, VCE=5V RS=10KΩ, f=10Hz to 15.7KHz 3 2 dB dB : KST5088 : KST5089 ©2002 Fairchild Semiconductor Corporation 50 V V MHz Rev. A2, November 2002 KST5088/5089 Marking Code Type KST5088 KST5089 Mark 1Q 1R Marking 1Q ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5088/5089 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = 5V 100 10 0.1 1 10 100 10 IC = 10 IB 1 0.1 VCE (sat) 0.01 0.1 IC[mA], COLLECTOR CURRENT Cib Cob 1 Figure 3. Output Capacitance Collector-Base Capaciance ©2002 Fairchild Semiconductor Corporation 100 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Cib[pF] Cob[pF], CAPACITANCE Cib f = 1MHz IE = 0 Cob f=100KHz IE = 0 VCB [V], COLLECTOR-BASE VOLTAGE 10 100 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 10 1 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain 0.1 1 V BE(sat) 1000 VCE = 5V 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Rev. A2, November 2002 KST5088/5089 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1