DinTek DTU19P10 P-channel 100 v (d-s) mosfet halogen-free Datasheet

DTU19P10
www.din-tek.jp
P-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 100
ID (A)
0.195 at VGS = - 10 V
- 19
0.210 at VGS = - 4.5 V
- 17
Qg (Typ.)
11.7
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Switch
• DC/DC Converters
S
TO-252
G
Drain Connected to Tab
G
D
S
D
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
- 100
Gate-Source Voltage
VGS
± 20
Parameter
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
IDM
Pulsed Drain Current
Avalanche Current
Single Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
ID
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
V
- 19
- 12.1
- 45
IAS
- 18
EAS
16.2
PD
Unit
32.1
A
mJ
b
2.5
W
TJ, Tstg
- 55 to 150
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
50
Junction-to-Case (Drain)
RthJC
3.9
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
1
DTU19P10
www.din-tek.jp
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = - 250 µA
- 100
VGS(th)
VDS = VGS, ID = - 250 µA
-1
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
IGSS
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
- 2.5
VDS = 0 V, VGS = ± 20 V
± 250
VDS = - 100 V, VGS = 0 V
-1
VDS = - 100 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 100 V, VGS = 0 V, TJ = 150 °C
- 250
VDS ≤ - 10 V, VGS = - 10 V
ID(on)
RDS(on)
gfs
- 15
V
nA
µA
A
VGS = - 10 V, ID = - 3.6 A
0.162
0.195
VGS = - 4.5 V, ID = - 3.4 A
0.175
0.210
VDS = - 15 V, ID = - 3.6 A
12
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Rise Timec
VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A
VDS = - 50 V, VGS = - 4.5 V, ID = - 3.6 A
Fall Timec
td(off)
23.2
34.8
11.7
17.6
3.5
f = 1 MHz
VDD = - 50 V, RL = 17.2 Ω
ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω
tf
Drain-Source Body Diode Ratings and Characteristics TC = 25 °C
1.2
5.7
11.5
7
14
12
18
33
50
9
18
- 19
Pulsed Current
ISM
- 45
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = - 2.9 A, VGS = 0 V
- 0.8
IF = - 2.9 A, dI/dt = 100 A/µs
98
trr
IRM(REC)
Qrr
Ω
ns
b
IS
Continuous Current
nC
4.8
td(on)
tr
c
pF
65
41
Rg
Gate Resistance
Turn-On Delay Timec
Turn-Off Delay Time
1055
VGS = 0 V, VDS = - 50 V, f = 1 MHz
A
- 1.5
V
50
75
ns
-4
-6
A
147
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTU19P10
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
0.30
V GS = 10 V thru 5 V
V GS = 4 V
R DS(on) - On-Resistance (Ω)
I D - Drain Current (A)
12
9
6
V GS = 3 V
3
0
0.25
0.20
V GS = 4.5 V
V GS = 10 V
0.15
0.10
0
1
2
3
4
0
6
3
V DS - Drain-to-Source Voltage (V)
13
19
ID - Drain Current (A)
Output Characteristics
On-Resistance vs. Drain Current
2.0
0.60
R DS(on) - On-Resistance (Ω)
1.6
I D - Drain Current (A)
9
1.2
0.8
T C = 25 °C
0.4
0.45
T J = 150 °C
0.30
T J = 25 °C
0.15
T C = 125 °C
T C = - 55 °C
0.0
0.00
0
1
2
3
4
0
V GS - Gate-to-Source Voltage (V)
2
4
6
8
10
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
25
10
VGS - Gate-to-Source Voltage (V)
g fs - Transconductance (S)
ID = 3.6 A
20
T C = - 55 °C
15
T C = 25 °C
10
T C = 125 °C
5
0
8
V DS = 50 V
6
V DS = 25 V
4
V DS = 80 V
2
0
0
3
6
9
ID - Drain Current (A)
Transconductance
13
19
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
3
DTU19P10
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
- 1.1
I S - Source Current (A)
- 1.4
T J = 150 °C
ID = 250 μA
VGS(th) (V)
10
- 1.7
T J = 25 °C
1
- 2.0
0.1
0.0
0.3
0.6
0.9
- 2.3
- 50
1.2
0
25
50
75
V SD - Source-to-Drain Voltage (V)
T J - Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
100
125
150
100
125
150
- 100
1200
VDS - Drain-to-Source Voltage (V)
1600
C - Capacitance (pF)
- 25
Ciss
800
400
- 106
ID = 250 μA
- 112
- 118
- 124
Coss
Crss
0
0
20
40
60
80
- 130
- 50
100
- 25
0
25
50
75
V DS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Capacitance
Drain Source Breakdown vs. Junction Temperature
2.1
10
V GS = 10 V
ID = 3.6 A
V GS = 4.5 V
1.3
0.9
I D - Drain Current (A)
(Normalized)
R DS(on) - On-Resistance
8
1.7
6
4
2
0.5
- 50
4
0
- 25
0
25
50
75
100
125
150
0
25
50
75
100
T J - Junction Temperature (°C)
T C - Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
125
150
DTU19P10
TYPICAL CHARACTERISTICS
www.din-tek.jp
25 °C, unless otherwise noted
100
100
Limited by R DS(on)*
I D - Drain Current (A)
IDAV (A)
19
TJ = 25 °C
TJ = 150 °C
10
100 μs
1 ms
1
10 ms
100 ms
1 s, 10 s, DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
1
10-6
10-5
10-4
10-3
10-2
10-1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10 -4
0.02
Single Pulse
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
5
Package Information
www.din-tek.jp
TO-252AA CASE OUTLINE
E
MILLIMETERS
A
C2
e
b2
C
A1
D1
e1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
5.21
-
0.205
0.265
E
6.35
6.73
0.250
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
• Dimension L3 is for reference only.
1
INCHES
DIM.
Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
APPLICATION NOTE
1
Legal Disclaimer Notice
www.din-tek.jp
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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