Fairchild FGA90N30 300v pdp igbt Datasheet

FGA90N30
300V PDP IGBT
Features
Description
• High Current Capability
Employing Unified IGBT Technology, FGA90N30 provides low
conduction and switching loss. FGA90N30 offers the optimum
solution for PDP applications where low condution loss is
essential.
• Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A
• High Input Impedance
TO-3P
G C E
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted
Description
FGA90N30
Units
VCES
Collector-Emitter Voltage
300
V
VGES
Gate-Emitter Voltage
± 30
V
IC
Collector Current
ICM
Pulsed Collector Current
PD
@ TC = 25°C
90
A
@ TC = 25°C
220
A
Maximum Power Dissipation
@ TC = 25°C
219
W
Maximum Power Dissipation
@ TC = 100°C
87
W
(Note 1)
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
°C
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Typ.
Max.
Units
RθJC(IGBT)
Symbol
Thermal Resistance, Junction-to-Case for IGBT
Parameter
--
0.57
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
©2006 Fairchild Semiconductor Corporation
FGA90N30 Rev. A
1
www.fairchildsemi.com
FGA90N30 300V PDP IGBT
September 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA90N30
FGA90N30
TO-3P
--
--
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250μA
300
--
--
V
ΔBVCES/
ΔTJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250μA
--
0.6
--
V/°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
100
μA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
± 250
nA
2.5
4.0
5.0
V
IC = 20A, VGE = 15V
--
1.1
1.4
V
IC = 90A, VGE = 15V
--
1.9
--
V
IC = 90A, VGE = 15V,
TC = 125°C
--
2.0
--
V
--
1700
-
pF
VCE = 30V, VGE = 0V,
f = 1MHz
--
290
-
pF
--
80
-
pF
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
--
30
--
ns
tr
Rise Time
--
200
--
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
VCC = 200V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25°C
--
110
--
ns
--
140
300
ns
--
0.15
--
mJ
--
0.45
--
mJ
Ets
Total Switching Loss
--
0.6
--
mJ
td(on)
Turn-On Delay Time
--
30
--
ns
tr
Rise Time
--
210
--
ns
td(off)
Turn-Off Delay Time
--
110
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
--
0.72
--
mJ
Ets
Total Switching Loss
--
0.88
--
mJ
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC =200V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 125°C
VCE = 200V, IC = 20A,
VGE = 15V
2
FGA90N30 Rev. A
--
200
--
ns
--
0.16
--
mJ
--
87
130
nC
--
12
18
nC
--
38
57
nC
www.fairchildsemi.com
FGA90N30 300V PDP IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
100
Figure 2. Typical Output Characteristics
100
o
20V
o
TC = 25 C
12V
12V
10V
15V
80
80
Collector Current, I [A]
10V
C
Collector Current, IC [A]
TC = 125 C
20V
15V
60
V GE= 8 V
40
60
V GE= 8 V
40
20
20
0
0
0
1
2
3
4
5
0
6
1
Figure3. Typical Saturation Voltage
Characteristics
4
5
6
C o m m o n E m itte r
V CE = 2 0V
100
o
TC =
60
40
o
25 C
o
TC = 125 C
C
Collector Current, I [A]
Tc = 25 C
o
Tc = 125 C
Collector Current, IC [A]
3
Figure 4. Transfer characteristics
C o m m o n E m itte r
V Ge = 15V
80
2
C o lle c t o r - E m it te r V o lt a g e , V C E [ V ]
C o lle c to r -E m itte r V o lta g e , V C E [V ]
10
20
0
1
0
1
2
3
0
2
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
8
10
6
CE
2 .0
90A
1 .8
1 .6
1 .4
40A
1 .2
20A
1 .0
Ic= 1 0 A
0 .8
C o m m o n E m it t e r
o
TC = 25 C
[V]
C o m m o n E m it t e r
V GE = 15V
2 .2
Collector - Emitter Voltage, V
[V]
CE
6
Figure 6. Saturation Voltage vs. VGE
2 .4
Collector-Emitter Voltage, V
4
G a te - E m itte r V o lta g e , V G E [V ]
C o lle c to r - E m itte r V o lta g e , V C E [V ]
5
4
3
90A
2
20A
1
0 .4
40A
10A
0 .6
0
25
50
75
100
125
4
8
12
16
20
o
C a s e T e m p e ra tu re , T C ( C )
G a t e - E m it t e r V o lt a g e , V G E [ V ]
3
FGA90N30 Rev. A
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FGA90N30 300V PDP IGBT
Typical Performance Characteristics
(Continued)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Charaacteristics
6
C o m m o n E m it t e r
o
TC = 125 C
C ie s
4
Capacitance [pF]
Collector - Emitter Voltage, V
CE
[V]
5
3
90A
2
20A
40A
1000
Coes
C re s
1
C o m m o n E m itte r
V GE = 0V , f = 1M H z
100
10A
o
TC = 25 C
0
4
8
12
16
20
0 .1
1
10
C o lle c to r - E m itte r V o lta g e , V C E [V ]
G a te - E m itte r V o lta g e , V G E [V ]
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
15
Ic M A X (P u ls e d )
C o m m o n E m it t e r
RL = 10 ohm
Collector Current, Ic [A]
[V]
GE
Gate-Emitter Voltage, V
Vcc = 200V
5
1m s
10
D C O p e ra tio n
1
S in g le N o n re p e titive
o
P u lse T c = 2 5 C
C u rve s m u s t b e d e ra te d
lin e a rly w ith in c re a s e
in te m p e ra tu re
0 .1
0 .0 1
0
10
100μs
Ic M A X (C o n tin u o u s )
10
0
50μs
100
o
TC = 25 C
20
30
40
50
60
70
80
0 .1
90
1
G a te C h a rg e , Q g [n C ]
10
100
1000
C o lle c to r - E m itte r V o lta g e , V C E [V ]
Figure 11. Turn-On Characteristics vs. Gate
Resistance
Figure 12. Turn-Off Characteristics vs. Gate
Resistance
1000
1000
C o m m o n E m itte r
V CC = 20 0 V , V GE = 15V
IC = 2 0 A
o
T C = 25 C
o
tr
Switching Time [ns]
Switching Time [ns]
T C = 125 C
100
td (o n )
tf
100
td (o ff)
C o m m o n E m itte r
V CC = 20 0 V , V GE = 15 V
IC = 2 0 A
o
TC = 25 C
o
TC = 125 C
10
10
0
20
40
60
80
0
100
40
60
80
100
G a t e R e s is t a n c e , R G [ Ω ]
G a te R e s is ta n c e , R G [ Ω ]
4
FGA90N30 Rev. A
20
www.fairchildsemi.com
FGA90N30 300V PDP IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Figure 14.Turn-Off Characteristics vs.
Collector Current
1000
1000
C o m m o n E m it t e r
V GE = 15V , R G = 10Ω
o
TC = 25 C
tf
o
Switching Time [ns]
Switching Time [ns]
TC = 125 C
tr
100
td (o n )
100
td ( o f f )
C o m m o n E m it te r
V GE = 15 V , R G = 10 Ω
o
TC = 25 C
o
TC = 125 C
10
10
0
20
40
60
80
0
100
20
40
60
80
100
C o lle c to r C u r r e n t , Ic [A ]
C o lle c to r C u r r e n t , Ic [ A ]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16.Switching Loss vs. Collector Current
10
1
Switching Loss [mJ]
Switching Loss [mJ]
E o ff
Eon
0 .1
C o m m o n E m itte r
V CC = 200V , V GE = 15V
IC = 2 0 A
1
E o ff
0 .1
C o m m o n E m itte r
V GE = 1 5 V , R G = 1 0 Ω
Eon
o
TC = 25 C
o
TC = 25 C
o
TC = 125 C
o
0 .0 1
TC = 125 C
0 .0 1
0
20
40
60
80
100
0
G a te R e s is t a n c e , R G [ Ω ]
20
40
60
80
100
C o lle c to r C u r r e n t , Ic [A ]
Figure 17. Turn-Off SOA Figure
1000
Collector Current, IC [A]
Safe O perating Area
o
V G E = 20V , T C = 100 C
100
10
1
10
100
1000
C ollector-E m itter V oltage, V C E [V ]
5
FGA90N30 Rev. A
www.fairchildsemi.com
FGA90N30 300V PDP IGBT
Typical Performance Characteristics
FGA90N30 300V PDP IGBT
Typical Performance Characteristics
(Continued)
Figure 18. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2
0.1
0.05
0.01
0.02
Pdm
0.01
t1
t2
single pulse
1E-3
1E-5
1E-4
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
6
FGA90N30 Rev. A
www.fairchildsemi.com
TO-3P
15.60 ±0.20
3.80 ±0.20
+0.15
3.50 ±0.20
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
1.50 –0.05
16.50 ±0.30
9.60 ±0.20
19.90 ±0.20
13.90 ±0.20
ø3.20 ±0.10
4.80 ±0.20
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
7
FGA90N30 Rev. A
0.60 –0.05
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FGA90N30 300V PDP IGBT
Mechanical Dimensions
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Definition
Advance Information
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This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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The datasheet is printed for reference information only.
Rev. I20
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