ONSEMI MCR69-2

MCR69-2, MCR69-3
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for overvoltage protection in crowbar circuits.
• Glass-Passivated Junctions for Greater Parameter Stability and
Reliability
• Center-Gate Geometry for Uniform Current Spreading Enabling
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High Discharge Current
SCRs
25 AMPERES RMS
50 thru 100 VOLTS
• Small Rugged, Thermowatt Package Constructed for Low Thermal
•
•
Resistance and Maximum Power Dissipation and Durability
High Capacitor Discharge Current, 750 Amps
Device Marking: Logo, Device Type, e.g., MCR69–2, Date Code
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ = 40 to +125°C, Gate Open)
MCR69–2
MCR69–3
*
Peak Discharge Current(2)
Symbol
A
Value
VDRM,
VRRM
Volts
50
100
4
ITM
750
Amps
On-State RMS Current
(180° Conduction Angles; TC = 85°C)
IT(RMS)
25
Amps
Average On-State Current
(180° Conduction Angles; TC = 85°C)
IT(AV)
16
Amps
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 125°C)
ITSM
300
Amps
1
I2t
375
A2s
Forward Peak Gate Current
(t ≤ 1.0 µs, TC = 85°C)
IGM
2.0
Amps
Forward Peak Gate Power
(t ≤ 1.0 µs, TC = 85°C)
PGM
20
Watts
PG(AV)
0.5
Watt
TJ
– 40 to
+125
°C
Tstg
– 40 to
+150
°C
—
8.0
in. lb.
Circuit Fusing Considerations
(t = 8.3 ms)
Forward Average Gate Power
(t = 8.3 ms, TC = 85°C)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
February, 2000 – Rev. 0
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various
duration of an exponentially decaying current waveform, t w is defined as
5 time constants of an exponentially decaying current pulse.
(3) Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value,
TJ = 125°C.
 Semiconductor Components Industries, LLC, 1999
K
Unit
1
Device
Package
Shipping
MCR69–2
TO220AB
500/Box
MCR69–3
TO220AB
500/Box
Publication Order Number:
MCR69/D
MCR69–2, MCR69–3
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RθJC
1.5
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
—
—
—
—
10
2.0
µA
mA
—
—
—
6.0
1.8
—
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
IDRM, IRRM
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage
(ITM = 50 A)(1)
(ITM = 750 A, tw = 1 ms)(2)
VTM
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
IGT
2.0
7.0
30
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
VGT
—
0.65
1.5
Volts
Gate Non–Trigger Voltage
(VD = 12 Vdc, RL = 100 Ω, TJ = 125°C)
VGD
0.2
0.40
—
Volts
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
IH
3.0
15
50
mA
Latching Current
(VD = 12 Vdc, IG = 150 mA)
IL
—
—
60
mA
Gate Controlled Turn-On Time(3)
(VD = Rated VDRM, IG = 150 mA)
(ITM = 50 A Peak)
tgt
—
1.0
—
µs
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Gate Open, Exponential Waveform, TJ = 125°C)
dv/dt
10
—
—
V/µs
Critical Rate-of-Rise of On-State Current
IG = 150 mA
di/dt
—
—
100
A/µs
DYNAMIC CHARACTERISTICS
p
p
TJ = 125°C
(1) Pulse duration
300 µs, duty cycle
2%.
(2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined
as 5 time constants of an exponentially decaying current pulse.
(3) The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
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2
MCR69–2, MCR69–3
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
IDRM
Peak Repetitive Off State Forward Voltage
Anode +
VTM
on state
Peak Forward Blocking Current
VRRM
IRRM
Peak Repetitive Off State Reverse Voltage
VTM
IH
Peak On State Voltage
IH
IRRM at VRRM
Peak Reverse Blocking Current
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
I TM, PEAK DISCHARGE CURRENT (AMPS)
Anode –
NORMALIZED PEAK CURRENT
1000
300
200
100
50
20
0.5
ITM
tw
tw = 5 time constants
1.0
0.8
0.6
0.4
0.2
0
5.0
2.0
1.0
10
20
25
50
tw, PULSE CURRENT DURATION (ms)
125
120
115
110
dc
100
95
90
80
75
8.0
12
100
125
32
Half Wave
24
dc
16
8.0
Half Wave
85
4.0
75
Figure 2. Peak Capacitor Discharge Current
Derating
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
Figure 1. Peak Capacitor Discharge Current
105
50
TC, CASE TEMPERATURE (°C)
16
TJ = 125°C
0
0
20
4.0
8.0
12
16
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 3. Current Derating
Figure 4. Maximum Power Dissipation
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3
20
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MCR69–2, MCR69–3
1
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
1k
2k 3k
5k
10 k
t, TIME (ms)
Figure 5. Thermal Response
NORMALIZED GATE TRIGGER VOLTAGE
5.0
VD = 12 Volts
RL = 100 Ω
3.0
2.0
1.0
0.5
0.3
0.2
–60
–40
–20
0
20
40
60
80 100
TJ, JUNCTION TEMPERATURE (°C)
120
1.4
1.0
0.8
0.5
–60
140
VD = 12 Volts
RL = 100 Ω
1.2
–40
–20
0
20
2.0
VD = 12 Volts
ITM = 100 mA
1.0
0.8
0.5
–40
–20
60
80
100
Figure 7. Gate Trigger Voltage
3.0
0.3
–60
40
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current
NORMALIZED HOLD CURRENT
NORMALIZED GATE TRIGGER CURRENT
10
0
40
20
60
80
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Holding Current
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4
100
120
140
120
140
MCR69–2, MCR69–3
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–07
ISSUE Z
–T–
B
F
T
SEATING
PLANE
C
S
4
Q
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 3:
PIN 1.
2.
3.
4.
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5
CATHODE
ANODE
GATE
ANODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
MCR69–2, MCR69–3
Notes
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6
MCR69–2, MCR69–3
Notes
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7
MCR69–2, MCR69–3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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MCR69/D