DIODES ZXMP6A17DN8TA

ZXMP6A17DN8
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.2A
DESCRIPTION
This new generation of high cell density trench MOSFETs from Zetex utilizes a
unique structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
SO8
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC-DC Converters
• Power management functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP6A17DN8TA
7’‘
12mm
500 units
ZXMP6A17DN8TC
13’‘
12mm
2500 units
PINOUT
DEVICE MARKING
ZXMP
6A17D
Top view
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SEMICONDUCTORS
ZXMP6A17DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-60
V
Gate-Source Voltage
V GS
⫾20
V
Continuous Drain [email protected] GS =10V; T A =25⬚C (b)(d)
@V GS =10V; T A =70⬚C (b)(d)
@V GS =10V; T A =25⬚C (a)(d)
ID
-3.2
-2.5
-2.4
A
A
A
Pulsed Drain Current (c)
I DM
-14.2
A
Continuous Source Current (Body Diode)
(b)
IS
-3.0
A
Pulsed Source Current (Body Diode) (c)
I SM
-14.2
A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
1.81
14.5
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
2.15
17
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient
(a)(d)
R θJA
100
°C/W
Junction to Ambient
(b)(e)
R θJA
70
°C/W
Junction to Ambient
(b)(d)
R θJA
60
°C/W
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
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SEMICONDUCTORS
2
ZXMP6A17DN8
CHARACTERISTICS
Max Power Dissipation (W)
-ID Drain Current (A)
10 RDS(on)
Limited
1
DC
100m
10m
1s
100ms
Single Pulse
Tamb=25°C
One active die
1
10ms
1ms
100µs
10
-VDS Drain-Source Voltage (V)
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Two active die
One active die
20
60
80 100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
110
Tamb=25°C
100
90 One active die
80
70
60 D=0.5
50
40
Single Pulse
30 D=0.2
20
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1
10 100 1k
MaximumPower (W)
Thermal Resistance (°C/W)
40
Single Pulse
Tamb=25°C
One active die
100
10
1
100µ 1m
Pulse Width (s)
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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SEMICONDUCTORS
ZXMP6A17DN8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-60
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance (1)(3)
g fs
Input Capacitance
TYP.
MAX.
UNIT
CONDITIONS
STATIC
V
I D =-250µA, V GS =0V
-1.0
␮A
V DS =-60V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
V
I =-250␮A, V DS = V GS
D
⍀
⍀
V GS =-10V, I D =-2.3A
V GS =-4.5V, I D =-1.9A
4.7
S
V DS =-15V,I D =-2.3A
C iss
637
pF
Output Capacitance
C oss
70
pF
Reverse Transfer Capacitance
C rss
53
pF
Turn-On Delay Time
t d(on)
2.6
ns
Rise Time
tr
3.4
ns
Turn-Off Delay Time
t d(off)
26.2
ns
Fall Time
tf
11.3
ns
Gate Charge
Qg
9.8
nC
Total Gate Charge
Qg
17.7
nC
Gate-Source Charge
Q gs
1.6
nC
Gate-Drain Charge
Q gd
4.4
nC
V SD
-0.85
t rr
Q rr
-1.0
0.125
0.190
DYNAMIC (3)
V DS =-30 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
V DD =-30V, I D =-1A
R G ≅6.0Ω, V GS =-10V
V DS =-30V,V GS =-5V,
I D =-2.2A
V DS =-30V,V GS =-10V,
I D =-2.2A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
-0.95
V
T J =25°C, I S =-2A,
V GS =0V
25.1
ns
T J =25°C, I F =-1.7A,
di/dt= 100A/µs
27.2
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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SEMICONDUCTORS
4
ZXMP6A17DN8
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
ZXMP6A17DN8
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
6
ZXMP6A17DN8
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETERS
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
e
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
D
4.80
5.00
0.189
0.197
c
0.19
0.25
0.008
0.010
H
5.80
6.20
0.228
0.244
⍜
0°
8°
0°
8°
E
3.80
4.00
0.150
0.157
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
-
-
-
-
-
1.27 BSC
Min
Max
0.050 BSC
© Zetex Semiconductors plc 2005
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[email protected]
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Fax: (1) 631 360 8222
[email protected]
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Fax: (852) 24250 494
[email protected]
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
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SEMICONDUCTORS