SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 ISSUE 2 DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt TYPICAL CHARACTERISTICS 1.6 IC/IB =50 1.4 1.2 1.0 0.6 0.6 0.2 1 20 PARTMARKING DETAIL - 0.4 0.001 0.01 0.1 1 VCE(sat) v IC VCE(sat) v IC VCE=10V 1.6 300 200 0.8 0.6 100 20 1.2 1.0 0.6 0.2 0.4 0.2 0 0.001 1.6 0.01 0.1 10 1 0 20 0.001 - (Volts) V 0.6 1 hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=10V 1.0 0.8 0.4 0.2 0 0.001 0.1 IC - Collector Current (Amps) 1.4 1.2 0.01 IC - Collector Current (Amps) 0.01 0.1 1 10 20 IC - Collector Current (Amps) VBE(on) v IC 3 - 193 10 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation Ptot Operating and Storage Temperature Range Tj:Tstg -5 V -200 mA 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). IC/IB =10 0.8 h 0.4 -55°C +25°C +100°C +175°C 10 1.4 - (Volts) 1.0 FZT558 B IC - Collector Current (Amps) 1.2 C ABSOLUTE MAXIMUM RATINGS. IC - Collector Current (Amps) - Typical Gain 1.4 10 h - Normalised Gain 0.1 +100°C +25°C -55°C 1.6 E 0 0.01 V 0.001 IC/IB =10 0.2 0 C 1.0 0.8 0.4 -55°C +25°C +100°C +175°C 1.2 0.8 V V - (Volts) 1.4 IC/IB =10 IC/IB =20 - (Volts) 1.6 FZT558 20 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 TYP. MAX. V IC=-100µA Collector-Emitter Breakdown Voltage VBR(CEO) -400 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -100 nA VCB=-320V Collector Cut-Off Current ICES -100 nA VCE=-320V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.5 V V IC=-20mA, IB=-2mA* IC=-50mA, IB=-6mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-50mA, IB=-5mA* Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-50mA, VCE=-10V* Static Forward Current Transfer Ratio hFE 100 100 15 Transition Frequency fT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff IC=-1mA, VCE=-10V IC=-50mA, VCE=-10V* IC=-100mA, VCE=-10V* 300 5 95 1600 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ns ns IC=-50mA, VC=-100V IB1=5mA, IB2=-10mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 192 SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 ISSUE 2 DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt TYPICAL CHARACTERISTICS 1.6 IC/IB =50 1.4 1.2 1.0 0.6 0.6 0.2 1 20 PARTMARKING DETAIL - 0.4 0.001 0.01 0.1 1 VCE(sat) v IC VCE(sat) v IC VCE=10V 1.6 300 200 0.8 0.6 100 20 1.2 1.0 0.6 0.2 0.4 0.2 0 0.001 1.6 0.01 0.1 10 1 0 20 0.001 - (Volts) V 0.6 1 hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=10V 1.0 0.8 0.4 0.2 0 0.001 0.1 IC - Collector Current (Amps) 1.4 1.2 0.01 IC - Collector Current (Amps) 0.01 0.1 1 10 20 IC - Collector Current (Amps) VBE(on) v IC 3 - 193 10 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation Ptot Operating and Storage Temperature Range Tj:Tstg -5 V -200 mA 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). IC/IB =10 0.8 h 0.4 -55°C +25°C +100°C +175°C 10 1.4 - (Volts) 1.0 FZT558 B IC - Collector Current (Amps) 1.2 C ABSOLUTE MAXIMUM RATINGS. IC - Collector Current (Amps) - Typical Gain 1.4 10 h - Normalised Gain 0.1 +100°C +25°C -55°C 1.6 E 0 0.01 V 0.001 IC/IB =10 0.2 0 C 1.0 0.8 0.4 -55°C +25°C +100°C +175°C 1.2 0.8 V V - (Volts) 1.4 IC/IB =10 IC/IB =20 - (Volts) 1.6 FZT558 20 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -400 TYP. MAX. V IC=-100µA Collector-Emitter Breakdown Voltage VBR(CEO) -400 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -100 nA VCB=-320V Collector Cut-Off Current ICES -100 nA VCE=-320V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.5 V V IC=-20mA, IB=-2mA* IC=-50mA, IB=-6mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-50mA, IB=-5mA* Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-50mA, VCE=-10V* Static Forward Current Transfer Ratio hFE 100 100 15 Transition Frequency fT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff IC=-1mA, VCE=-10V IC=-50mA, VCE=-10V* IC=-100mA, VCE=-10V* 300 5 95 1600 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz ns ns IC=-50mA, VC=-100V IB1=5mA, IB2=-10mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 192