BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown Surface Mount Package Ideally Suited for Automatic Assembly DISCONTINUED, FOR NEW DESIGN USE BSS84 Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G G 1.78 2.05 H H 2.65 3.05 D TOP VIEW G E Mechanical Data · · · · · Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202 Method 208 Pin Connection: See Diagram Marking: S50 Weight: 0.008 grams (approx.) Maximum Ratings SOT-23 Dim A B C S D M K J L J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm @ TA = 25°C unless otherwise specified Symbol Value Unit Drain-Source Voltage Characteristic –VDSS 60 V Drain-Gate Voltage –VDGS 60 V Gate-Source Voltage (pulsed) VGS ±20 V Drain Current (continuous) –ID 250 mA Power Dissipation @TC = 25°C (Note 1) Pd 310 mW Tj, TSTG -65 to+150 °C Symbol Value Unit Maximum Forward Current (continuous) IF 0.30 A Forward Voltage Drop (typ.) @ VGS = 0, IF = 0.12A, Tj = 25°C VF 0.85 V Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5 cm2 area. DS11402 Rev. F-3 1 of 3 BS850 Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Current Symbol Min Typ Max Unit Test Condition -V(BR)DSS 60 90 — V -ID = 100µA, VGS = 0 VGS(th) — 1.0 3.0 V -VGS = VDS, –ID = 1.0mA -IGSS — — 10 nA -VGS = 15V, VDS = 0 µA -VDS = 25V, VGS = 0 Drain-Source Cutoff Current -IDSS — — 0.5 Drain-Source ON Resistance rDS (ON) — 3.5 5.0 W Thermal Resistance, Junction to Ambient Air RqJA — — 400 K/W Note 1 Thermal Resistance Junction to Substrate Backside RqJSB — — 320 K/W Note 1 Forward Transconductance gFS — 200 — mm -VDS = 10V, –ID = 0.2A, f = 1.0MHz Input Capacitance Ciss — 60 — pF -VDS = 10V, VGS=0, f = 1.0MHz Switching Times Turn On Time Turn Off Time ton toff — 5.0 25 — ns -VGS = 10V, –VDS = 10V, RD = 100W Notes: -VGS = 10V, –ID = 0.2A 1. Device mounted on ceramic substrate 0.7mm; 2.5 cm2 area. DISCONTINUED, FOR NEW DESIGN USE BSS84 DS11402 Rev. F-3 2 of 3 BS850 0.4 -ID (ON), DRAIN SOURCE ON CURRENT (A) Pd, POWER DISSIPATION (W) 0.5 (See Note 1) 0.3 0.2 0.1 1 7V 0.8 -VGS = 6V 0.6 Pulse test width 80 s; pulse duty factor 1% 5V 0.4 4V 0.2 3V 0 0 0 100 0 200 40 60 1.0 TA = 25 C 0.8 Pulse test width 80 s; pulse duty factor 1% 4.5V 200 4.0V Pulse test width 80 s; pulse duty factor 1% 0.6 0.4 0.2 DISCONTINUED, FOR NEW DESIGN BSS84 0 0 USE 10 8 3.5V 100 100 TA = 25 C 400 300 80 -VDS = 10V -VGS = 5V -ID, DRAIN CURRENT (A) -ID (ON), DRAIN SOURCE ON-CURRENT (mA) 500 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2. Output Characteristics TA, AMBIENT TEMPERATURE ( C) Fig. 1. Power Derating Curve 3.0V 0 2 0 4 6 gf s, FORWARD TRANSCONDUCTANCE (mm) 500 -VDS = 10V Pulse test width 80 s; pulse duty factor 1% 400 2 4 6 10 8 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 4. Drain Current vs Gate-Source Voltage -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics gfs, FORWARD TRANSCONDUCTANCE (mm) TA = 25 C 300 200 100 0 500 -VDS = 10V 400 Pulse test width 80 s; pulse duty factor 1% 300 200 100 0 0 2 4 6 8 0 10 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 5. Transconductance vs Gate-Source Voltage DS11402 Rev. F-3 100 200 300 400 500 -ID, DRAIN CURRENT (mA) Fig. 6. Transconductance vs. Drain Current 3 of 3 BS850